X-On Electronics has gained recognition as a prominent supplier of 2SK2225E MOSFETs across the USA, India, Europe, Australia, and various other global locations. 2SK2225E MOSFETs are a product manufactured by Renesas. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

2SK2225E Renesas

2SK2225E electronic component of Renesas
2SK2225E Renesas
2SK2225E MOSFETs
2SK2225E  Semiconductors

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See Product Specifications
Part No. 2SK2225E
Manufacturer: Renesas
Category: MOSFETs
Description: MOSFET N Trench 1500V 2A 12 Ω @ 1A,15V TO-3P RoHS
Datasheet: 2SK2225E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 4.7666 ea
Line Total: USD 4.77 
Availability - 819
Ship by Fri. 18 Apr to Wed. 23 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
819
Ship by Fri. 18 Apr to Wed. 23 Apr
MOQ : 1
Multiples : 1
1 : USD 4.7666
10 : USD 3.1507
30 : USD 2.8385
100 : USD 2.5228
500 : USD 2.3776
1000 : USD 2.3123

   
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We are delighted to provide the 2SK2225E from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SK2225E and other electronic components in the MOSFETs category and beyond.

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2SK2225 Silicon N Channel MOS FET REJ03G1005-0200 (Previous: ADE-208-140) Rev.2.00 Sep 07, 2005 Application High speed power switching Features High breakdown voltage (V = 1500 V) DSS High speed switching Low drive current No Secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) D 1. Gate G 2. Drain 3. Source S 1 2 3 Rev.2.00 Sep 07, 2005 page 1 of 6 2SK2225 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage V 1500 V DSS Gate to source voltage V 20 V GSS Drain current I 2 A D 1 Drain peak current I * 7 A D(pulse) Body to drain diode reverse drain current I 2 A DR 2 Channel dissipation Pch* 50 W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW 10 s, duty cycle 1 % 2. Value at Tc = 25C Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V 1500 V I = 10 mA, V = 0 (BR)DSS D GS Gate to source leak current I 1 A V = 20 V, V = 0 GSS GS DS Zero gate voltage drain current I 500 A V =1200 V, V = 0 DSS DS GS Gate to source cutoff voltage V 2.0 4.0 V I = 1 mA, V = 10 V GS(off) D DS 3 Static drain to source on state R 9 12 I = 1 A, V = 15 V* DS(on) D GS resistance 3 Forward transfer admittance y 0.45 0.75 S I = 1 A, V = 20 V* fs D DS Input capacitance Ciss 990 pF V = 10 V, V = 0, DS GS f = 1 MHz Output capacitance Coss 125 pF Reverse transfer capacitance Crss 60 pF Turn-on delay time t 17 ns I = 1 A, V = 10 V, d(on) D GS R = 30 L Rise time t 50 ns r Turn-off delay time t 150 ns d(off) Fall time t 50 ns f Body to drain diode forward voltage V 0.9 V I = 2 A, V = 0 DF F GS Body to drain diode reverse t 1750 ns I = 20 A, V = 0, rr F GS recovery time di / dt = 100 A / s F Note: 3. Pulse Test Rev.2.00 Sep 07, 2005 page 2 of 6

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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