X-On Electronics has gained recognition as a prominent supplier of 70V639S10BCG SRAM across the USA, India, Europe, Australia, and various other global locations. 70V639S10BCG SRAM are a product manufactured by Renesas. We provide cost-effective solutions for SRAM, ensuring timely deliveries around the world.

70V639S10BCG Renesas

70V639S10BCG electronic component of Renesas
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Part No.70V639S10BCG
Manufacturer: Renesas
Category: SRAM
Description: SRAM Chip Async Dual 3.3V 2.25M-Bit 128K x 18 10ns 256-Pin CABGA Tube
Datasheet: 70V639S10BCG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 202.2501 ea
Line Total: USD 202.25 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 1
Multiples : 1
1 : USD 202.2501

   
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We are delighted to provide the 70V639S10BCG from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 70V639S10BCG and other electronic components in the SRAM category and beyond.

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HIGH-SPEED 3.3V 128K x 18 ASYNCHRONOUS IDT70V639S DUAL-PORT STATIC RAM Features True Dual-Port memory cells which allow simultaneous Fully asynchronous operation from either port access of the same memory location Separate byte controls for multiplexed bus and bus High-speed access matching compatibility Commercial: 10/12/15ns (max.) Supports JTAG features compliant to IEEE 1149.1 Industrial: 12/15ns (max.) Due to limited pin count, JTAG is not supported on the Dual chip enables allow for depth expansion without 128-pin TQFP package. external logic LVTTL-compatible, single 3.3V (150mV) power supply for IDT70V639 easily expands data bus width to 36 bits or core more using the Master/Slave select when cascading more LVTTL-compatible, selectable 3.3V (150mV)/2.5V (100mV) than one device power supply for I/Os and control signals on each port M/S = VIH for BUSY output flag on Master, Available in a 128-pin Thin Quad Flatpack, 208-ball fine M/S = VIL for BUSY input on Slave pitch Ball Grid Array, and 256-ball Ball Grid Array Busy and Interrupt Flags Industrial temperature range (40C to +85C) is available On-chip port arbitration logic for selected speeds Full on-chip hardware support of semaphore signaling Green parts available, see ordering information between ports Functional Block Diagram UBL UBR LBL LBR R/WL R/WR B B B B E E E E 0 1 1 0 CE0L CE0R L L R R CE1L CE1R OEL OER Dout0-8 L Dout0-8 R Dout9-17 L Dout9-17 R 128K x 18 MEMORY ARRAY Din L I/O0L-I/O17L Din R I/O0R -I/O17R A16R Address Address A16L ADDR L ADDR R Decoder Decoder A0R A0L OEL ARBITRATION OER INTERRUPT CE0R CE0L SEMAPHORE CE1R CE1L LOGIC R/WL R/WR BUSYL BUSYR SEML M/S SEMR INTL INTR TMS TDI JTAG TCK TDO TRST 5621 drw 01 NOTES: 1. BUSY is an input as a Slave (M/S=VIL) and an output when it is a Master (M/S=VIH). 2. BUSY and INT are non-tri-state totem-pole outputs (push-pull). JUNE 2015 1 2015 Integrated Device Technology, Inc. DSC-5621/7IDT70V639S High-Speed 3.3V 128K x 18 Asynchronous Dual-Port Static RAM Industrial and Commercial Temperature Ranges Description The IDT70V639 is a high-speed 128K x 18 Asynchronous Dual-Port address, and I/O pins that permit independent, asynchronous access for Static RAM. The IDT70V639 is designed to be used as a stand-alone reads or writes to any location in memory. An automatic power down 2304K-bit Dual-Port RAM or as a combination MASTER/SLAVE Dual- feature controlled by the chip enables (either CE0 or CE1) permit the Port RAM for 36-bit-or-more word system. Using the IDT MASTER/ on-chip circuitry of each port to enter a very low standby power mode. SLAVE Dual-Port RAM approach in 36-bit or wider memory system The 70V639 can support an operating voltage of either 3.3V or 2.5V applications results in full-speed, error-free operation without the need for on one or both ports, controlled by the OPT pins. The power supply for additional discrete logic. the core of the device (VDD) remains at 3.3V. This device provides two independent ports with separate control, (1,2,3,4) Pin Configurations 1 2 3 4 5 6 7 8 9 11 12 13 14 10 15 16 17 I/O9L A12L VDD NC VSS TDO A16L A8L NC A4L A0L OPTL NC VSS A NC SEML INTL A NC VSS A9L NC TDI NC A13L NC VSS A5L A1L VDDQR I/O8L NC B CE0L BUSYL VSS B I/O9R VDD NC A14L A10L CE1L VSS A2L VDD I/O8R VSS VDDQL VDDQR UBL A6L NC C R/WL C NC VSS I/O10L NC A15L A11L A7L VDD NC VDD NC VDDQL I/O7L I/O7R D LBL OEL A3L D I/O11L VDDQR I/O10R NC I/O6L NC VSS NC E E VDDQL I/O11R VSS VSS I/O6R NC VDDQR NC F F NC VSS I/O12L NC NC VDDQL I/O5L NC G G 70V639BF VDD NC VDDQR VDD I/O12R NC VSS I/O5R H H (5) BF208 VDDQL VDD VSS VDD VSS VSS VSS VDDQR J J 208-Ball BGA (6) I/O3R VDDQL I/O4R VSS Top View I/O14R VSS I/O13R K VSS K NC I/O14L VDDQR I/O13L NC I/O3L VSS I/O4L L L VDDQL NC I/O15R VSS VSS NC I/O2R VDDQR M M NC VSS NC I/O15L I/O1R VDDQL NC I/O2L N N NC I/O1L I/O16R I/O16L VDDQR NC TRST A16R A12R A8R NC VDD INTR A4R VSS NC SEMR P P VSS A5R A1R VSS VDDQL I/O0R VDDQR R VSS NC I/O17R TCK NC A13R A9R NC CE0R R BUSYR VSS VSS A14R A10R VSS A6R A2R NC NC NC I/O17L VDDQL TMS NC UBR CE1R R/WR T T VDD OPTR NC I/O0L SS DD A11R A7R VDD M/S A3R A0R V NC V NC A15R LBR OER U U 5621 tbl 02b NOTES: 1. All VDD pins must be connected to 3.3V power supply. 2. All VDDQ pins must be connected to appropriate power supply: 3.3V if OPT pin for that port is set to VIH (3.3V) and 2.5V if OPT pin for that port is set to VIL (0V). 3. All VSS pins must be connected to ground. 4. Package body is approximately 15mm x 15mm x 1.4mm with 0.8mm ball pitch. 5. This package code is used to reference the package diagram. 6. This text does not indicate orientation of the actual part-marking. 2

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
ID4
IDT
IDT, Integrated Device Technology Inc
INTEGRATED DEVICE
INTEGRATED DEVICE TECHNOLOGY
INTEGRATED DEVICES TECH AID
Intersil
INTERSIL - FGC
Intersil(Renes as Electronics)
Intersil(Renesas Electronics)
ITS
REA
RENESAS
RENESAS (IDT)
RENESAS (INTERSIL)
Renesas / IDT
Renesas / Intersil
Renesas Electronics
Renesas Electronics America
RENESAS TECHNOLOGY
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