3.3V CMOS Static RAM 71V124SA 1 Meg (128K x 8-Bit) Center Power & Ground Pinout Features Description 128K x 8 advanced high-speed CMOS static RAM The IDT71V124 is a 1,048,576-bit high-speed static RAM organized JEDEC revolutionary pinout (center power/GND) for as 128K x 8. It is fabricated using high-performance, high-reliability CMOS reduced noise technology. This state-of-the-art technology, combined with innovative Equal access and cycle times circuit design techniques, provides a cost-effective solution for high-speed Commercial: 10/12/15ns memory needs. The JEDEC center power/GND pinout reduces noise Industrial: 10/12/15ns generation and improves system performance. One Chip Select plus one Output Enable pin The IDT71V124 has an output enable pin which operates as fast as Inputs and outputs are LVTTL-compatible 5ns, with address access times as fast as 10ns available. All bidirectional Single 3.3V supply inputs and outputs of the IDT71V124 are LVTTL-compatible and operation Low power consumption via chip deselect is from a single 3.3V supply. Fully static asynchronous circuitry is used Available in a 32-pin 300- and 400-mil Plastic SOJ, and no clocks or refreshes are required for operation. 32-pin Type II TSOP packages Industrial temperature range (40C to +85C) is available for selected speeds Green parts available, see ordering information Functional Block Diagram A0 1,048,576-BIT ADDRESS MEMORY ARRAY DECODER A16 8 8 I/O0-I/O7 I/O CONTROL . 8 WE CONTROL OE LOGIC CS 3873 drw 01 1 Jun.30.2071V124SA, 3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout Commercial and Industrial Temperature Ranges (1) (1) Pin Configurations Absolute Maximum Ratings Symbol Rating Value Unit A A16 0 VDD Supply Voltage Relative -0.5 to +4.6 V 1 32 to GND A1 2 31 A15 A2 3 30 A14 IN, VOUT Terminal Voltage Relative -0.5 to VDD+0.5 V V A3 4 29 A13 to GND CS 5 28 OE 71V124 I/O0 6 27 I/O7 PJG32 Commercial I/O6 I/O1 7 26 -0 to +70 PBG32 Operating Temperature VDD 8 PHG32 25 GND o TA C GND 9 24 VDD Industrial -40 to +85 I/O2 10 23 I/O5 Operating Temperature I/O4 I/O3 11 22 o WE 12 21 A12 TBIAS Temperature Under Bias -55 to +125 C A4 13 20 A11 o A5 14 19 A10 STG Storage Temperature -55 to +125 C T A6 15 18 A9 A7 16 17 A8 PT Power Dissipation 1.25 W 3873 drw 02 IOUT DC Output Current 50 mA 3873 tbl 02 NOTE: SOJ and TSOP 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause Top View permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational NOTE: sections of this specification is not implied. Exposure to absolute maximum rating 1. This text does not indicate oriebtation of actual part-marking. conditions for extended periods may affect reliability. (1) Recommended Operating Truth Table Temperature and Supply Voltage CS OE WE I/O Function Grade Temperature GND VDD LL H DATAOUT Read Data Commercial 0C to +70C 0V See Below LX L DATAIN Write Data Industrial -40C to +85C 0V See Below L H H High-Z Output Disabled 3873 tbl 02a H X X High-Z Deselected Standby Recommended DC Operating 3873 tbl 01 NOTE: Conditions 1. H = VIH, L = VIL, X = Don t care. Symbol Parameter Min. Typ. Max. Unit (1) VDD Supply Voltage 3.15 3.3 3.6 V Capacitance (2) DD Supply Voltage 3.0 3.3 3.6 V V (TA = +25C, f = 1.0MHz, SOJ package) VSS Ground 0 0 0 V (1) Symbol Parameter Conditions Max. Unit (3) VIH Input High Voltage 2.0 VDD+0.3 V CIN Input Capacitance VIN = 3dV 6 pF (1) VIL Input Low Voltage 0.5 0.8 V CI/O I/O Capacitance VOUT = 3dV 7 pF 3873 tbl 04 NOTES: 3873 tbl 03 NOTE: 1. For 71V124SA10 only. 1. This parameter is guaranteed by device characterization, but is not production tested. 2. For all speed grades except 71V124SA10. 3. VIH (max.) = VDD+2V for pulse width less than 5ns, once per cycle. 4. VIL (min.) = 2V for pulse width less than 5ns, once per cycle. DC Electrical Characteristics (VDD = Min. to Max., Commercial and Industrial Temperature Ranges) Symbol Parameter Test Conditions Min. Max. Unit ILI Input Leakage Current VDD = Max., VIN = GND to VDD 5A ILO Output Leakage Current VDD = Max.,CS = VIH, VOUT = GND to VDD 5A VOL Output Low Voltage IOL = 8mA, VDD = Min. 0.4 V VOH Output High Voltage IOH = 4mA, VDD = Min. 2.4 V 3873 tbl 05 2 Jun.30.20