IDT74ALVC162244 3.3V CMOS 16-BIT BUFFER/DRIVER WITH 3-STATE OUTPUTS INDUSTRIAL TEMPERATURE RANGE 3.3V CMOS 16-BIT IDT74ALVC162244 BUFFER/DRIVER WITH 3-STATE OUTPUTS FEATURES: DESCRIPTION: 0.5 MICRON CMOS Technology This 16-bit buffer/driver is built using advanced dual metal CMOS Typical tSK(o) (Output Skew) < 250ps technology. The ALVC162244 is designed specifically to improve the ESD > 2000V per MIL-STD-883, Method 3015 > 200V using performance and density of 3-state memory address drivers, clock machine model (C = 200pF, R = 0) drivers, and bus-oriented receivers and transmitters. The device can be VCC = 3.3V 0.3V, Normal Range used as four 4-bit buffers, two 8-bit buffers, or one 16-bit buffer. It provides VCC = 2.7V to 3.6V, Extended Range true outputs and symmetrical active-low output-enable (OE) inputs. VCC = 2.5V 0.2V The ALVC162244 has series resistors in the device output structure CMOS power levels (0.4 W typ. static) which will significantly reduce line noise when used with light loads. This Rail-to-Rail output swing for increased noise margin driver has been designed to drive 12mA at the designated threshold Available in TSSOP package levels. DRIVE FEATURES: APPLICATIONS: Balanced Output Drivers: 12mA 3.3V high speed systems Low switching noise 3.3V and lower voltage computing systems FUNCTIONAL BLOCK DIAGRAM 1 25 1OE 3OE 36 13 47 2 1A1 3A1 1Y1 3Y1 46 3 35 14 1A2 1Y2 3A2 3Y2 44 5 33 16 1A3 1Y3 3A3 3Y3 32 43 6 17 1A4 1Y4 3A4 3Y4 24 48 2OE 4OE 30 41 8 19 2A1 4A1 2Y1 4Y1 29 40 9 20 2A2 2Y2 4A2 4Y 2 38 11 27 22 2A3 4A3 2Y3 4Y3 12 23 37 26 2A4 2Y4 4A4 4Y4 IDT and the IDT logo are registered trademarks of Integrated Device Technology, Inc. INDUSTRIAL TEMPERATURE RANGE JUNE 2009 1 2009 Integrated Device Technology, Inc. DSC-4560/6IDT74ALVC162244 3.3V CMOS 16-BIT BUFFER/DRIVER WITH 3-STATE OUTPUTS INDUSTRIAL TEMPERATURE RANGE (1) PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS Symbol Description Max Unit (2) VTERM Terminal Voltage with Respect to GND 0.5 to +4.6 V (3) VTERM Terminal Voltage with Respect to GND 0.5 to VCC+0.5 V 1OE 1 48 2OE TSTG Storage Temperature 65 to +150 C 1Y1 2 47 1A1 IOUT DC Output Current 50 to +50 mA 1Y2 3 46 1A2 IIK Continuous Clamp Current, 50 mA VI < 0 or VI > VCC GND 4 45 GND IOK Continuous Clamp Current, VO < 0 50 mA 1Y3 5 1A3 44 ICC Continuous Current through each 100 mA ISS VCC or GND 1Y4 6 43 1A4 NOTES: VCC 7 42 VCC 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation 2Y1 8 41 2A1 of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating 2Y2 9 40 2A2 conditions for extended periods may affect reliability. 2. VCC terminals. GND 10 39 GND 3. All terminals except VCC. 2Y3 11 2A3 38 2Y4 12 2A4 37 CAPACITANCE (TA = +25C, F = 1.0MHz) 3Y1 (1) 13 36 3A1 Symbol Parameter Conditions Typ. Max. Unit CIN Input Capacitance VIN = 0V 5 7 pF 14 3Y2 35 3A2 COUT Output Capacitance VOUT = 0V 7 9 pF GND 34 15 GND COUT I/O Port Capacitance VIN = 0V 7 9 pF 3Y3 33 16 3A3 NOTE: 1. As applicable to the device type. 3Y4 17 3A4 32 VCC 18 3 VCC 1 PIN DESCRIPTION 4Y1 19 30 4A1 Pin Names Description 4Y2 20 29 4A2 xOE 3-State Output Enable Inputs (Active LOW) 21 GND 28 GND xA x Data Inputs 4Y3 22 27 4A3 x Y x 3-State Outputs 4Y4 23 26 4A4 4OE 24 25 3OE (1) FUNCTION TABLE (EACH 4-BIT BUFFER) TSSOP Inputs Outputs TOP VIEW xOE xAx xYx LH H LL L HX Z NOTE: 1. H = HIGH Voltage Level X = Dont Care L = LOW Voltage Level Z = High-Impedance 2