74ALVC16244APAG Renesas

IDT74ALVC16244A 3.3V CMOS 16-BIT BUFFER/DRIVER WITH 3-STATE OUTPUTS INDUSTRIAL TEMPERATURE RANGE IDT74ALVC16244A 3.3V CMOS 16-BIT BUFFER/DRIVER WITH 3-STATE OUTPUTS DESCRIPTION: FEATURES: This 16-bit buffer/driver is built using advanced dual metal CMOS 0.5 MICRON CMOS Technology technology. The ALVC16244A is designed specifically to improve the Typical tSK(o) (Output Skew) < 250ps performance and density of 3-state memory address drivers, clock drivers, ESD > 2000V per MIL-STD-883, Method 3015 > 200V using and bus-oriented receivers and transmitters. The device can be used as machine model (C = 200pF, R = 0) four 4-bit buffers, two 8-bit buffers, or one 16-bit buffer. It provides true VCC = 3.3V 0.3V, Normal Range outputs and symmetrical active-low output-enable (OE) inputs. VCC = 2.7V to 3.6V, Extended Range The ALVC16244A has been designed with a 24mA output driver. This VCC = 2.5V 0.2V driver is capable of driving a moderate to heavy load while maintaining CMOS power levels (0.4 W typ. static) speed performance. Rail-to-Rail output swing for increased noise margin Available in TSSOP package DRIVE FEATURES: APPLICATIONS: High Output Drivers: 24mA 3.3V high speed systems Suitable for heavy loads 3.3V and lower voltage computing systems FUNCTIONAL BLOCK DIAGRAM 25 1 1OE 3OE 13 47 2 36 1A1 3A1 1Y1 3Y1 46 3 35 14 1A2 1Y2 3A2 3Y2 44 5 33 16 1A3 1Y3 3A3 3Y3 43 32 6 17 1A4 1Y4 3A4 3Y4 24 48 2OE 4OE 41 8 30 19 2A1 4A1 2Y1 4Y1 29 40 9 20 2A2 2Y2 4A2 4Y2 38 11 27 22 2A3 4A3 2Y3 4Y3 12 23 37 26 2A4 2Y4 4A4 4Y4 IDT and the IDT logo are registered trademarks of Integrated Device Technology, Inc. INDUSTRIAL TEMPERATURE RANGE JUNE 2016 1 2016 Integrated Device Technology, Inc. DSC-4698/7IDT74ALVC16244A 3.3V CMOS 16-BIT BUFFER/DRIVER WITH 3-STATE OUTPUTS INDUSTRIAL TEMPERATURE RANGE (1) PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS Symbol Description Max Unit (2) VTERM Terminal Voltage with Respect to GND 0.5 to +4.6 V (3) 1OE 1 48 2OE VTERM Terminal Voltage with Respect to GND 0.5 to VCC+0.5 V TSTG Storage Temperature 65 to +150 C 2 1Y1 47 1A1 IOUT DC Output Current 50 to +50 mA 1Y2 3 46 1A2 IIK Continuous Clamp Current, 50 mA VI < 0 or VI > VCC GND 4 45 GND IOK Continuous Clamp Current, VO < 0 50 mA 1Y3 5 1A3 44 ICC Continuous Current through each 100 mA ISS VCC or GND 1Y4 6 43 1A4 NOTES: VCC 7 42 VCC 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation 8 2Y1 41 2A1 of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating 9 2Y2 40 2A2 conditions for extended periods may affect reliability. 2. VCC terminals. GND 10 39 GND 3. All terminals except VCC. 2Y3 11 38 2A3 CAPACITANCE (TA = +25C, F = 1.0MHz) 2Y4 12 37 2A4 (1) Symbol Parameter Conditions Typ. Max. Unit 3Y1 13 36 3A1 CIN Input Capacitance VIN = 0V 5 7 pF 3Y2 14 35 3A2 COUT Output Capacitance VOUT = 0V 7 9 pF GND COUT I/O Port Capacitance VIN = 0V 7 9 pF 15 34 GND NOTE: 3Y3 16 33 3A3 1. As applicable to the device type. 3Y4 17 32 3A4 VCC 18 31 VCC 4Y1 19 4A1 30 PIN DESCRIPTION 4Y2 20 29 4A2 Pin Names Description xOE 3-State Output Enable Inputs (Active LOW) GND 21 28 GND x A x Data Inputs 4Y3 22 27 4A3 x Y x 3-State Outputs 4Y4 23 26 4A4 4OE 24 25 3OE (1) FUNCTION TABLE TSSOP TOP VIEW Inputs Outputs xOE xAx xYx LH H LL L HX Z NOTE: 1. H = HIGH Voltage Level X = Dont Care L = LOW Voltage Level Z = High-Impedance 2