IDT74ALVCH16244 3.3V CMOS 16-BIT BUFFER/DRIVER WITH 3-STATE OUTPUTS INDUSTRIAL TEMPERATURE RANGE 3.3V CMOS 16-BIT IDT74ALVCH16244 BUFFER/DRIVER WITH 3-STATE OUTPUTS AND BUS-HOLD FEATURES: DESCRIPTION: 0.5 MICRON CMOS Technology This 16-bit buffer/driver is built using advanced dual metal CMOS technol- Typical tSK(o) (Output Skew) < 250ps ogy. The ALVCH16244 is designed specifically to improve the performance ESD > 2000V per MIL-STD-883, Method 3015 > 200V using and density of 3-state memory address drivers, clock drivers, and bus- machine model (C = 200pF, R = 0) oriented receivers and transmitters. The device can be used as four 4-bit VCC = 3.3V 0.3V, Normal Range buffers, two 8-bit buffers, or one 16-bit buffer. It provides true outputs and VCC = 2.7V to 3.6V, Extended Range symmetrical active-low output-enable (OE) inputs. VCC = 2.5V 0.2V The ALVCH16244 has been designed with a 24mA output driver. This CMOS power levels (0.4 W typ. static) driver is capable of driving a moderate to heavy load while maintaining speed Rail-to-Rail output swing for increased noise margin performance. Available in TSSOP package The ALVCH16244 has bus-hold which retains the inputs last state whenever the input bus goes to a high impedance. This prevents floating inputs DRIVE FEATURES: and eliminates the need for pull-up/down resistors. High Output Drivers: 24mA Suitable for heavy loads APPLICATIONS: 3.3V high speed systems 3.3V and lower voltage computing systems FUNCTIONAL BLOCK DIAGRAM 1 25 1OE 3OE 36 13 47 2 1A1 3A1 1Y1 3Y1 46 3 35 14 3Y2 1A2 1Y2 3A2 44 5 33 16 1A3 1Y3 3A3 3Y3 43 32 6 17 1A4 1Y4 3A4 3Y4 24 48 2OE 4OE 41 8 30 19 2A1 4A1 2Y1 4Y1 40 9 29 20 2A2 2Y2 4A2 4Y2 38 11 27 22 2A3 4A3 2Y3 4Y3 12 23 37 26 2A4 2Y4 4A4 4Y4 IDT and the IDT logo are registered trademarks of Integrated Device Technology, Inc. INDUSTRIAL TEMPERATURE RANGE AUGUST 2016 1 2016 Integrated Device Technology, Inc. DSC-4561/8IDT74ALVCH16244 3.3V CMOS 16-BIT BUFFER/DRIVER WITH 3-STATE OUTPUTS INDUSTRIAL TEMPERATURE RANGE (1) PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS Symbol Description Max Unit (2) VTERM Terminal Voltage with Respect to GND 0.5 to +4.6 V (3) VTERM Terminal Voltage with Respect to GND 0.5 to VCC+0.5 V 1OE 1 48 2OE TSTG Storage Temperature 65 to +150 C 2 1Y1 47 1A1 IOUT DC Output Current 50 to +50 mA IIK Continuous Clamp Current, 50 mA 3 1Y2 46 1A2 VI < 0 or VI > VCC GND 4 45 GND IOK Continuous Clamp Current, VO < 0 50 mA 1Y3 5 44 1A3 ICC Continuous Current through each 100 mA ISS VCC or GND 1Y4 6 43 1A4 NOTES: VCC 7 42 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause VCC permanent damage to the device. This is a stress rating only and functional operation 8 2Y1 41 of the device at these or any other conditions above those indicated in the operational 2A1 sections of this specification is not implied. Exposure to absolute maximum rating 2Y2 9 40 2A2 conditions for extended periods may affect reliability. 2. VCC terminals. GND 10 39 GND 3. All terminals except VCC. 2Y3 11 2A3 38 2Y4 12 CAPACITANCE (TA = +25C, F = 1.0MHz) 37 2A4 (1) 3Y1 Symbol Parameter Conditions Typ. Max. Unit 13 36 3A1 CIN Input Capacitance VIN = 0V 5 7 pF 3Y2 14 35 3A2 COUT Output Capacitance VOUT = 0V 7 9 pF GND 34 15 GND CI/O I/O Port Capacitance VIN = 0V 7 9 pF 3Y3 16 33 NOTE: 3A3 1. As applicable to the device type. 3Y4 17 32 3A4 VCC 18 31 VCC PIN DESCRIPTION 4Y1 19 30 4A1 Pin Names Description 20 4Y2 29 4A2 xOE 3-State Output Enable Inputs (Active LOW) GND 21 28 (1) GND xA x Data Inputs 4Y3 22 x Y x 3-State Outputs 27 4A3 NOTE: 4Y4 23 26 4A4 1. These pins haveBus-Hol. All other pins are standard inputs, outputs, or I/Os. 4OE 24 25 3OE (1) FUNCTION TABLE (EACH 4-BIT BUFFER) TSSOP Inputs Outputs TOP VIEW xOE xAx xYx LH H LL L HX Z NOTE: 1. H = HIGH Voltage Level X = Dont Care L = LOW Voltage Level Z = High-Impedance 2