74FCT162827ATPVG Renesas

IDT74FCT162827AT/CT FAST CMOS 20-BIT BUFFER INDUSTRIAL TEMPERATURE RANGE FAST CMOS IDT74FCT162827AT/CT 20-BIT BUFFER FEATURES: DESCRIPTION: 0.5 MICRON CMOS Technology The FCT162827T 20-bit buffers are built using advanced dual metal CMOS High-speed, low-power CMOS replacement for ABT functions technology. These 20-bit bus drivers provide high-performance bus interface Typical tSK(o) (Output Skew) < 250ps buffering for wide data/address paths or buses carrying parity. Two pair of Low input and output leakage 1A (max.) NAND-ed output enable controls offer maximum control flexibility and are ESD > 2000V per MIL-STD-883, Method 3015 > 200V using organized to operate the device as two 10-bit buffers or one 20-bit buffer. Flow- machine model (C = 200pF, R = 0) through organization of signal pins simplifies layout. All inputs are designed with VCC = 5V 10% hysteresis for improved noise margin. Balanced Output Drivers (24mA) The FCT162827T has balanced output drive with current limiting resistors. Reduced system switching noise This offers low ground bounce, minimal undershoot, and controlled output fall Typical VOLP (Output Ground Bounce) < 0.6V at VCC = 5V, timesreducing the need for external series terminating resistors. The TA = 25C FCT162827T is a plug-in replacement for the FCT16827T and ABT16827 for Available in SSOP and TSSOP packages on-board interface applications. FUNCTIONAL BLOCK DIAGRAM 1 28 1OE1 2OE1 29 56 1OE2 2OE2 2 42 55 15 1Y1 2Y1 1A1 2A1 TO NINE OTHER CHANNELS TO NINE OTHER CHANNELS The IDT logo is a registered trademark of Integrated Device Technology, Inc. INDUSTRIAL TEMPERATURE RANGE SEPTEMBER 2009 1 2009 Integrated Device Technology, Inc. DSC-5440/7IDT74FCT162827AT/CT FAST CMOS 20-BIT BUFFER INDUSTRIAL TEMPERATURE RANGE (1)(1)(1)(1)(1) ABSOLUTE MAXIMUM RATINGS PIN CONFIGURATION Symbol Description Max Unit (2) VTERM Terminal Voltage with Respect to GND 0.5 to 7 V 1 56 1OE2 1OE1 (3) VTERM Terminal Voltage with Respect to GND 0.5 to VCC+0.5 V 2 55 1Y1 1A1 TSTG Storage Temperature 65 to +150 C 3 54 1Y2 1A2 IOUT DC Output Current 60 to +120 mA GND 4 53 GND NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause 5 52 1Y3 1A3 permanent damage to the device. This is a stress rating only and functional operation 6 51 1Y4 1A4 of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating VCC 7 50 VCC conditions for extended periods may affect reliability. 2. All device terminals except FCT162XXX Output and I/O terminals. 8 49 1Y5 1A5 3. Outputs and I/O terminals for FCT162XXX. 9 48 1Y6 1A6 10 47 1Y7 1A7 11 46 GND GND CAPACITANCE (TA = +25C, f = 1.0MHz) 12 45 1Y8 1A8 (1) Symbol Parameter Conditions Typ. Max. Unit 13 44 1Y9 1A9 CIN Input Capacitance VIN = 0V 3.5 6 pF 14 43 1Y10 1A10 COUT Output Capacitance VOUT = 0V 3.5 8 pF 15 42 2A1 2Y1 NOTE: 1. This parameter is measured at characterization but not tested. 16 41 2Y2 2A2 17 40 2Y3 2A3 18 39 GND GND 19 38 2Y4 2A4 PIN DESCRIPTION 20 37 2A5 2Y5 Pin Names Description 21 36 2Y6 2A6 xOE x Output Enable Inputs (Active LOW) 22 35 VCC VCC x A x Data Inputs 23 34 2Y7 2A7 x Y x 3-State Outputs 24 33 2Y8 2A8 25 32 GND GND 26 31 2Y9 2A9 27 30 2Y10 2A10 28 29 2OE2 2OE1 (1) FUNCTION TABLE Inputs Outputs SSOP/ TSSOP xOE1 xOE2 xAx xYx TOP VIEW LL L L LL H H HX X Z XH X Z NOTE: 1. H = HIGH voltage level L = LOW voltage level X = Dont care Z = High-impedance 2