IDT74LVCH16244A 3.3V CMOS 16-BIT BUFFER/DRIVER WITH 3-STATE OUTPUTS INDUSTRIAL TEMPERATURE RANGE 3.3V CMOS IDT74LVCH16244A 16-BIT BUFFER/DRIVER WITH 3-STATE OUTPUTS, 5 VOLT TOLERANT I/O AND BUS-HOLD FEATURES: DESCRIPTION: Typical tSK(o) (Output Skew) < 250ps The LVCH16244A 16-bit buffer/driver is built using advanced dual metal ESD > 2000V per MIL-STD-883, Method 3015 > 200V using CMOS technology. The LVCH16244A is designed specifically to improve machine model (C = 200pF, R = 0) the performance and density of 3-state memory address drivers, clock VCC = 3.3V 0.3V, Normal Range drivers, and bus-oriented receivers and transmitters. The device can be VCC = 2.7V to 3.6V, Extended Range used as four 4-bit buffers, two 8-bit buffers, or one 16-bit buffer. This device CMOS power levels (0.4 W typ. static) provides true outputs and symmetrical active-low output-enable (OE) All inputs, outputs, and I/O are 5V tolerant inputs. Available in TSSOP package All pins of this 16-bit buffer/driver can be driven from either 3.3V or 5V devices. This feature allows the use of this device a translator in a mixed 3.3V/5V supply system. DRIVE FEATURES: The LVCH16244A has been designed with a 24mA output driver. The High Output Drivers: 24mA driver is capable of driving a moderate to heavy load while maintaining Reduced system switching noise speed performance. The LVCH16244A has bus-hold which retains the inputs last state APPLICATIONS: whenever the input goes to a high impedance. This prevents floating inputs 5V and 3.3V mixed voltage systems and eliminates the need for pull-up/down resistors. Data communication and telecommunication systems FUNCTIONAL BLOCK DIAGRAM 1 25 1OE 3OE 2 36 13 47 1A1 1Y1 3A1 3Y1 46 14 3 35 1A2 1Y2 3A2 3Y2 44 5 33 16 1A3 3A3 1Y3 3Y3 43 6 32 17 1A4 1Y4 3A4 3Y4 48 24 2OE 4OE 41 8 30 19 2A1 4A1 2Y1 4Y1 40 9 29 20 2A2 2Y2 4A2 4Y2 27 38 11 22 2A3 4A3 2Y3 4Y3 37 12 26 23 2A4 4A4 2Y4 4Y4 INDUSTRIAL TEMPERATURE RANGE OCTOBER 2015 1 DSC-4728/3IDT74LVCH16244A 3.3V CMOS 16-BIT BUFFER/DRIVER WITH 3-STATE OUTPUTS INDUSTRIAL TEMPERATURE RANGE (1) PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS Symbol Description Max Unit VTERM Terminal Voltage with Respect to GND 0.5 to +6.5 V TSTG Storage Temperature 65 to +150 C 1 48 1OE 2OE IOUT DC Output Current 50 to +50 mA 1Y1 2 47 1A1 IIK Continuous Clamp Current, 50 mA IOK VI < 0 or VO < 0 3 1Y2 46 1A2 ICC Continuous Current through each 100 mA GND 4 45 ISS VCC or GND GND 5 NOTE: 1Y3 44 1A3 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause 6 permanent damage to the device. This is a stress rating only and functional operation 1Y4 1A4 43 of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating VCC 7 42 VCC conditions for extended periods may affect reliability. 8 2Y1 41 2A1 9 40 2Y2 2A2 10 39 GND GND CAPACITANCE (TA = +25C, F = 1.0MHz) (1) 2Y3 11 38 Symbol Parameter Conditions Typ. Max. Unit 2A3 CIN Input Capacitance VIN = 0V 4.5 6 pF 12 2Y4 37 2A4 COUT Output Capacitance VOUT = 0V 6.5 8 pF 3Y1 13 36 3A1 CI/O I/O Port Capacitance VIN = 0V 6.5 8 pF NOTE: 3Y2 14 35 3A2 1. As applicable to the device type. 15 GND 34 GND 16 3A3 33 3Y3 3Y4 17 32 3A4 PIN DESCRIPTION 18 VCC 31 VCC Pin Names Description 4Y1 30 (1) 19 4A1 xAx Data Inputs x Y x 3-State Outputs 4Y2 20 29 4A2 xOE 3-State Output Enable Inputs (Active LOW) 21 GND 28 GND NOTE: 1. These pins haveBus-Hol. All other pins are standard inputs, outputs, or I/Os. 4Y3 22 27 4A3 23 4Y4 26 4A4 (1) FUNCTION TABLE (EACH 4-BIT BUFFER) 24 25 4OE 3OE Inputs Outputs xOE xAx xYx LL L TSSOP TOP VIEW LH H HX Z NOTES: 1. H = HIGH Voltage Level X = Dont Care L = LOW Voltage Level Z = High-Impedance 2