Preliminary Datasheet CR12CM-12B R07DS0232EJ0300 600V - 12A - Thyristor Rev.3.00 Medium Power Use Jul 30, 2013 Features I : 12 A The product guaranteed maximum junction T (AV) temperature of 150C V : 600 V DRM Non-Insulated Type I : 30 mA GT Planar Passivation Type Outline RENESAS Package code: PRSS0004AG-A RENESAS Package code: PRSS0004AAAA-A (Package name: TO-220AB) (Package name: TO-220) 4 4 2, 4 1. Cathode 2. Anode 3. Gate 3 1 4. Anode 1 1 2 2 3 3 Applications Switching mode power supply, regulator for autocycle, motor control, heater control, and other general purpose control applications Maximum Ratings Voltage class Parameter Symbol Unit 12 Repetitive peak reverse voltage V 600 V RRM Non-repetitive peak reverse voltage V 720 V RSM DC reverse voltage V 480 V R (DC) Repetitive peak off-state voltage V 600 V DRM DC off-state voltage V 480 V D (DC) R07DS0232EJ0300 Rev.3.00 Page 1 of 8 Jul 30, 2013 CR12CM-12B Preliminary Parameter Symbol Ratings Unit Conditions RMS on-state current I 18.8 A T (RMS) Average on-state current I 12 A Commercial frequency, sine half wave T (AV) Note2 180 conduction, Tc = 116C Surge on-state current I 360 A 60Hz sine half wave 1 full cycle, TSM peak value, non-repetitive 2 2 2 I t for fusing It 544 A s Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Peak gate power dissipation P 5 W GM Average gate power dissipation P 0.5 W G (AV) Peak gate forward voltage V 6 V FGM Peak gate reverse voltage V 10 V RGM Peak gate forward current I 2 A FGM Junction temperature Tj 40 to +150 C Storage temperature Tstg 40 to +150 C Mass 2.1 g Typical value Electrical Characteristics Parameter Symbol Min. Typ. Max. Unit Test conditions Repetitive peak reverse current I 2.0/5.0 mA Tj = 125C/150C, V applied RRM RRM Repetitive peak off-state current I 2.0/5.0 mA Tj = 125C/150C, V applied DRM DRM On-state voltage V 1.6 V Tc = 25C, I = 40 A, TM TM instantaneous value V 1.5 V Tj = 25C, V = 6 V, I = 1 A Gate trigger voltage GT D T Gate non-trigger voltage V 0.2/0.1 V Tj = 125C/150C, GD V = 1/2 V D DRM Gate trigger current I 30 mA Tj = 25C, V = 6 V, I = 1 A GT D T Holding current I 15 mA Tj = 25C, V = 12 V H D Note1 Note2 Thermal resistance R 1.2 C/W Junction to case th (j-c) Notes: 1. The contact thermal resistance R in case of greasing is 1.0C/W. th (c-f) 2. Case temperature is measured at anode tab 1.5 mm away from the molded case. R07DS0232EJ0300 Rev.3.00 Page 2 of 8 Jul 30, 2013
