F1423EVB-SI Renesas

F1423 Datasheet TX Differential Input RF Amplifier 600 MHz to 3000 MHz GENERAL DESCRIPTION FEATURES The F1423 is a 600 MHz to 3000 MHz TX differential Broadband 600 MHz 3000 MHz input / single-ended output RF amplifier used in 13.1 dB typical gain 2000 MHz transmitter applications. 5.1 dB NF 2000 MHz +41.8 dBm OIP3 2000 MHz The F1423 TX Amp provides 13.1 dB gain with +21.5 dBm output P1dB 2000 MHz +41.8 dBm OIP3 and 5.1 dB noise figure at 2000 MHz. Single 5 V supply voltage This device uses a single 5 V supply and 120 mA of I . CC I = 120 mA CC This device is packaged in a 4mm x 4mm, 24-pin Thin Up to +105 C T operating temperature CASE QFN with 50 ohm differential RF input and 50 ohm 50 differential input impedance single ended RF output impedances for ease of 50 single ended output impedance integration into the signal-path. Positive gain slope for board loss compensation Standby mode for power savings 4 mm x 4 mm, 24-pin TQFN package COMPETITIVE ADVANTAGE In typical Base Stations, RF Amplifiers are used in the TX traffic paths to drive the transmit power amplifier. FUNCTIONAL BLOCK DIAGRAM The F1423 TX Amplifier offers very high reliability due to its construction using silicon die in a QFN package. The F1423 includes a broadband differential input to accept AC-coupled signals directly from a balanced modulator or RF DAC architecture. RFOUT RFIN APPLICATIONS Multi-mode, Multi-carrier Transmitters GSM850/900 Base Stations PCS1900 Base Stations STBY BAND SEL DCS1800 Base Stations WiMAX and LTE Base Stations UMTS/WCDMA 3G Base Stations ORDERING INFORMATION PHS/PAS Base Stations Public Safety Infrastructure Tape & Reel F1423NBGI8 RF Product Line Green F1423, Rev O 11/6/2015 1 F1423 ABSOLUTE MAXIMUM RATINGS Parameter Symbol Min Max Units V to GND V -0.3 +5.5 V CC CC STBY, Band Sel V -0.3 V + 0.25 V Cntl CC RBIAS1 I +1.5 mA RB1 RBIAS2 I +0.8 mA RB2 1 RFIN+, RFIN-, Voltage V -0.02 +0.02 V RFin 1 RFIN+, RFIN-, Current I -5 +5 mA RFin RFOUT externally applied DC voltage V V - 0.15 V + 0.15 V RFout CC CC RF Differential Input Power P +22 dBm in (applied for 24 hours maximum) Continuous Power Dissipation P 1.5 W diss Junction Temperature T 150 C j Storage Temperature Range T -65 150 C st Lead Temperature (soldering, 10s) 260 C ElectroStatic Discharge HBM Class 2 (JEDEC/ESDA JS-001-2014) (2000 V) ElectroStatic Discharge CDM Class C3 (JESD 22-C101F) (1000 V) Note 1: The RFIN+ and RFIN- pins connect to an internal balun that presents a very low impedance to ground. Stresses above those listed above may cause permanent damage to the device. Functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. PACKAGE THERMAL AND MOISTURE CHARACTERISTICS (Junction Ambient) 40 C/W JA (Junction Case) The Case is defined as the exposed paddle 4 C/W JC Moisture Sensitivity Rating (Per J-STD-020) MSL1 TM Zero-Distortion , TX Amplifier 2