F1650NLGI Renesas

IDTF1650NLGI Datasheet ZIF/CIF Modulator 600MHz to 2400MHz FEATURES GENERAL DESCRIPTION Power Gain = 3.25dB This document describes specifications for the F1650NLGI Zero/Complex IF Modulator implementing Direct 100 differential drive from Tx DAC TM Zero-Distortion technology for low power consumption << 559900mmWW PPoowweerr CCoonnssuummppttiioonn 22GGHHzz with improved ACLR. This device interfaces directly to a high performance Tx dual DAC. -158dBm/Hz Output Noise IP2 = +60dBm 2GHz O COMPETITIVE ADVANTAGE IP3 = +36dBm 2GHz IP3 = +36dBm 2GHz OO In typical multi-mode, multi-carrier basestation transmitters the modulator has limited linearity and high Excellent native LO and image suppression power consumption which penalizes the system ACLR 600 MHz input 1dB Bandwidth and system Power consumptions budgets in a Digital- Pre-Distortion environment. 600 MHz to 2400MHz RF BW The IDTF1650 is designed to eliminate these penalties by CCoonnssttaanntt LLOO iimmppeeddaannccee wwhheenn OOFFFF TM embedding Zero-Distortion technology into the device 3.3V Single Power Supply such that very high IP3 and IP2 are achieved with minimal current draw. LO port can be driven single ended or differential Power consumption 45% 45% IM3 Distortion 12 dB 12 dB 4mm x 4mm 24-pin TQFN package TMTM Zero-Distortion Zero-Distortion PART MATRIX DEVICE BLOCK DIAGRAM RF freq Power Tx VCO/PLL Part IP2 IP3 Noise O O Range Cons. ++6600 558877 ++3366 --115588 F1650 600 2400 F1650 600 2400 ddBBmm mmWW ddBBmm ddBBmm//HHzz I 0 +3.3V RF out Bias 90 Q Control STBY ORDERING INFORMATION Omit IDT 0.8 mm height Tape & prefix package Reel IDTF1650NLGI8 Green RF product Line Industrial Temp range TM Zero-Distortion Modulator 1 Rev1, March 2014 IDTF1650NLGI Datasheet ZIF/CIF Modulator 600MHz to 2400MHz ABSOLUTE MAXIMUM RATINGS VDD to GND -0.3V to +3.6V STBY -0.3V to (VDD + 0.3V) BB I+, BB I-, BB Q+, BB Q- -0.3V to 1.8V LO IN -0.3V to 0.3V RF OUT (VDD-0.35V) to (VDD-0.05V) Continuous Power Dissipation 1.5W (Junction Ambient) +45C/W JA (Junction Case) The Case is defined as the exposed paddle +2.5C/W JC Operating Temperature Range (Case Temperature) T = -40C to +105C CASE Maximum Junction Temperature 150C Storage Temperature Range -65C to +150C Lead Temperature (soldering, 10s) +260C Stresses above those listed above may cause permanent damage to the device. Functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability TM Zero-Distortion Modulator 2 Rev1, March 2014