IDT74FCT16245ATPVG Renesas

IDT54/74FCT16245T/AT/CT/ET FAST CMOS 16-BIT BIDIRECTIONAL TRANSCEIVER MILITARY AND INDUSTRIAL TEMPERATURE RANGES FAST CMOS 16-BIT IDT54/74FCT16245T/AT/CT/ET BIDIRECTIONAL TRANSCEIVER DESCRIPTION: FEATURES: The FCT16245T 16-bit transceiver is built using advanced dual metal CMOS 0.5 MICRON CMOS Technology technology. These high-speed, low-power transceivers are ideal for High-speed, low-power CMOS replacement for ABT functions synchronous communication between two busses (A and B). The Direction and Typical tSK(o) (Output Skew) < 250ps Output Enable controls operate these devices as either two independent 8-bit Low input and output leakage 1A (max.) transceivers or one 16-bit transceiver. The direction control pin (xDIR) controls ESD > 2000V per MIL-STD-883, Method 3015 > 200V using the direction of data flow. The output enable pin (xOE) overrides the direction machine model (C = 200pF, R = 0) control and disables both ports. All inputs are designed with hysteresis for High drive outputs (32mA IOH, 64mA IOL) improved noise margin. Power off disable outputs permit live insertion The FCT16245T is ideally suited for driving high-capacitance loads and low- Typical VOLP (Output Ground Bounce) < 1.0V at VCC = 5V, impedance backplanes. The output buffers are designed with power off disable TA = 25C capability to allowlive insertio of boards when used as backplane drivers. Available in the following packages: Industrial: SSOP, TSSOP Military: CERPACK FUNCTIONAL BLOCK DIAGRAM 1 DIR 2 DIR 1OE 2OE 1A1 2A1 1B1 2B1 1A2 2A2 1B2 2B2 1A3 2A3 1B3 2B3 1A4 2A4 1B4 2B4 1A5 2A5 1B5 2B5 1A6 2A6 1B6 2B6 1A7 2A7 1B7 2B7 1A8 2A8 1B8 2B8 IDT and the IDT logo are registered trademark of Integrated Device Technology, Inc. MILITARY AND INDUSTRIAL TEMPERATURE RANGES JANUARY 2009 1 2009 Integrated Device Technology, Inc. DSC-5456/9IDT54/74FCT16245T/AT/CT/ET FAST CMOS 16-BIT BIDIRECTIONAL TRANSCEIVER MILITARY AND INDUSTRIAL TEMPERATURE RANGES (1)(1)(1)(1)(1) PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS Symbol Description Max Unit (2) VTERM Terminal Voltage with Respect to GND 0.5 to +7 V (3) 1 48 1DIR 1OE VTERM Terminal Voltage with Respect to GND 0.5 to VCC+0.5 V TSTG Storage Temperature 65 to +150 C 2 47 1B1 1A1 IOUT DC Output Current 60 to +120 mA 3 46 1B2 1A2 NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may GND 4 45 GND cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in 5 44 1B3 1A3 the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 6 43 1B4 1A4 2. All device terminals except FCT162XXXT and FCT166XXXT (APort) Output and I/O terminals. VCC 7 42 VCC 3. Output and I/O terminals terminals for FCT162XXX and FCT166XXXT (A-Port). 8 41 1B5 1A5 CAPACITANCE (TA = +25C, F = 1.0MHz) 9 40 (1) 1B6 1A6 Symbol Parameter Conditions Typ. Max. Unit CIN Input Capacitance VIN = 0V 3.5 6 pF GND 10 39 GND COUT Output Capacitance VOUT = 0V 3.5 8 pF 11 38 1B7 1A7 NOTE: 1. This parameter is measured at characterization but not tested. 12 37 1B8 1A8 13 36 2B1 2A1 PIN DESCRIPTION 14 35 2B2 2A2 Pin Names Description GND 15 34 GND xOE Output Enable Inputs (Active LOW) 16 33 2B3 2A3 xDIR Direction Control Inputs xAx Side A Inputs or 3-State Outputs 17 32 2B4 2A4 xBx Side B Inputs or 3-State Outputs VCC 18 31 VCC 19 30 2B5 2A5 (1) FUNCTION TABLE 20 29 2B6 2A6 Inputs GND 21 28 GND xOE xDIR Outputs 22 27 2B7 2A7 L L Bus B Data to Bus A 23 26 2B8 2A8 L H Bus A Data to Bus B H X High Z State 24 25 2DIR 2OE NOTE: 1. H = HIGH Voltage Level L = LOW Voltage Level SSOP/ TSSOP CERPACK X = Dont Care TOP VIEW Z = High-Impedance 2