IDTQS3VH16211 INDUSTRIAL TEMPERATURE RANGE 2.5V / 3.3V 24-BIT HIGH BANDWIDTH BUS SWITCH QUICKSWITCH PRODUCTS IDTQS3VH16211 2.5V / 3.3V 24-BIT HIGH BANDWIDTH BUS SWITCH FEATURES: DESCRIPTION: N channel FET switches with no parasitic diode to Vcc The QS3VH16211 HotSwitch is a 24-bit high bandwidth bus switch. The Isolation under power-off conditions QS3VH16211 has very low ON resistance, resulting in under 250ps No DC path to Vcc or GND propagation delay through the switch. This device operates as a 24-bit bus 5V tolerant in OFF and ON state switch. When 1OE is low, 1An is connected to 1Bn. When 2OE is low, 2An 5V tolerant I/Os is connected to 2Bn. In the OFF and ON states, the switches are 5V-tolerant. Low RON - 4 typical In the OFF state, the switches offer very high impedance at the terminals. Flat RON characteristics over operating range The combination of near-zero propagation delay, high OFF impedance, Rail-to-rail switching 0 - 5V and over-voltage tolerance makes the QS3VH16211 ideal for high perfor- Bidirectional dataflow with near-zero delay: no added ground mance communications applications. It is also suitable for switching wide bounce digital buses. Excellent RON matching between channels The QS3VH16211 is characterized for operation from -40C to +85C. Vcc operation: 2.3V to 3.6V High bandwidth - up to 500 MHz LVTTL-compatible control Inputs Undershoot Clamp Diodes on all switch and control Inputs Low I/O capacitance, 4pF typical Available in TSSOP package APPLICATIONS: Hot-swapping 10/100 Base-T, Ethernet LAN switch Low distortion analog switch Replaces mechanical relay ATM 25/155 switching FUNCTIONAL BLOCK DIAGRAM 1A1 1B1 2A1 2B1 1A12 1B12 2A12 2B12 2OE 1OE The IDT logo is a registered trademark of Integrated Device Technology, Inc. INDUSTRIAL TEMPERATURE RANGE JANUARY 2013 1 c 2013 Integrated Device Technology, Inc. DSC-5883/7IDTQS3VH16211 2.5V / 3.3V 24-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE (1) ABSOLUTE MAXIMUM RATINGS PIN CONFIGURATION Symbol Description Max. Unit (2) VTERM Supply Voltage to Ground 0.5 to 4.6 V 56 1OE NC 1 (3) VTERM DC Switch Voltage VS 0.5 to 5.5 V 1A1 55 2 2OE (3) VTERM DC Input Voltage VIN 0.5 to 5.5 V 1A2 54 3 1B1 VAC AC Input Voltage (pulse width 20ns) 3 V 1A3 53 4 1B2 IOUT DC Output Current (max. current/pin) 120 mA 1A4 52 5 1B3 TSTG Storage Temperature -65 to +150 C 1A5 6 51 1B4 NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may 1A6 7 50 1B5 cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the 8 49 GND GND operational sections of this specification is not implied. Exposure to absolute 9 48 1A7 1B6 maximum rating conditions for extended periods may affect reliability. 2. VCC terminals. 10 47 1A8 1B7 3. All terminals except VCC. 11 46 1A9 1B8 12 45 o 1A10 1B9 CAPACITANCE (TA = +25 C, f = 1MHz, VIN = 0V, VOUT = 0V) 13 44 1A11 1B10 (1) Symbol Parameter Typ. Max. Unit 43 1A12 14 1B11 CIN Control Inputs 3 5 pF 42 2A1 15 CI/O Quickswitch Channels (Switch OFF) 4 6 pF 1B12 CI/O Quickswitch Channels (Switch ON) 8 12 pF 41 2A2 16 2B1 NOTE: 40 VCC 17 2B2 1. This parameter is guaranteed but not production tested. 39 2A3 18 2B3 38 19 GND GND 20 37 2A4 2B4 PIN DESCRIPTION 21 36 2A5 2B5 Pin Names I/O Description xA1 - xA12 I/O Bus A 22 35 2A6 2B6 xB1 - xB12 I/O Bus B 23 34 2A7 2B7 1OE - 2OE I Data Select 24 33 2A8 2B8 2A9 25 32 2B9 2A10 26 31 2B10 (1) FUNCTION TABLE 2A11 27 30 2B11 1OE 2OE 1Ax 2Ax Function 2A12 28 29 2B12 LL 1Bx 2Bx 1Ax to 1Bx, 2Ax to 2Bx LH 1Bx Z 1Ax to 1Bx TSSOP HL Z 2Bx 2Ax to 2Bx TOP VIEW H H Z Z Disconnect NOTE: 1. H = HIGH Voltage Level L = LOW Voltage Level Z = High-Impedence 2