R1LV0808ASB-5SI#B0 Renesas

R1LV0808ASB 5SI, 7SI 8Mb Advanced LPSRAM (1024k word x 8bit) REJ03C0394-0100 Rev.1.00 2009.12.08 Description The R1LV0808ASB is a family of low voltage 8-Mbit static RAMs organized as 1,048,576-words by 8-bit, fabricated by Renesas s high-performance 0.15um CMOS and TFT technologies. The R1LV08808ASB is suitable for memory applications where a simple interfacing, battery operating and battery backup are the important design objectives. The R1LV0808ASB is packaged in a 44pin thin small outline mount device 11.76mm18.41mm 44-pin plastic TSOP (II) . It gives the best solution for a compaction of mounting area as well as flexibility of wiring pattern of printed circuit boards. Features Single 2.4-3.6V power supply Small stand-by current: 1.2 A (Vcc=3.0V, typ.) No clocks, No refresh All inputs and outputs are TTL compatible Easy memory expansion by CS1 andCS2 Common Data I/O Three-state outputs: OR-tie capability OE prevents data contention in the I/O bus Operation temperature: -40 ~ +85C Ordering information Temperature Type No. Power supply Access time Package Range 2.7V to 3.6V 55 ns R1LV0808ASB-5SI 11.76mm18.41mm 44-pin plastic TSOP (II) -40 ~ +85C 2.4V to 2.7V 70 ns (normal-bend type) (44P3F) R1LV0808ASB-7SI 2.4V to 3.6V 70 ns REJ03C0394-0100 Rev.0.01 2009.12.08 Page 1 of 14 R1LV0808ASB 5SI, 7SI Pin Arrangement 44-pin TSOP (II) 1 44 A4 A5 2 43 A3 A6 3 42 A2 A7 4 41 A1 OE 5 40 A0 CS2 6 39 CS1 A8 7 38 NC NC 8 37 NC NC 9 36 DQ0 DQ7 10 35 DQ1 DQ6 11 34 VCC GND 12 33 GND VCC 13 32 DQ2 DQ5 14 31 DQ3 DQ4 15 30 NC NC 16 29 NC NC 17 28 WE A9 18 27 A19 A10 19 26 A18 A11 20 25 A17 A12 21 24 A16 A13 22 23 A15 A14 REJ03C0394-0100 Rev.0.01 2009.12.08 Page 2 of 14