X-On Electronics has gained recognition as a prominent supplier of UPD48576118FF-E18-DW1-A DRAM across the USA, India, Europe, Australia, and various other global locations. UPD48576118FF-E18-DW1-A DRAM are a product manufactured by Renesas. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

UPD48576118FF-E18-DW1-A Renesas

UPD48576118FF-E18-DW1-A electronic component of Renesas
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Part No.UPD48576118FF-E18-DW1-A
Manufacturer: Renesas
Category: DRAM
Description: DRAM Chip DDR SDRAM 576Mbit 32Mx18 1.8V 144-Pin FBGA
Datasheet: UPD48576118FF-E18-DW1-A Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
630: USD 45.1137 ea
Line Total: USD 28421.63 
Availability - 0
MOQ: 630  Multiples: 630
Pack Size: 630
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 630
Multiples : 630
630 : USD 45.1137

   
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We are delighted to provide the UPD48576118FF-E18-DW1-A from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the UPD48576118FF-E18-DW1-A and other electronic components in the DRAM category and beyond.

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Datasheet PD48576109 PD48576118 R10DS0064EJ0300 Rev.3.00 576M-BIT Low Latency DRAM Oct 01, 2012 Separate I/O Description The PD48576109 is a 67,108,864-word by 9 bit and the PD48576118 is a 33,554,432 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell. The PD48576109 and PD48576118 integrate unique synchronous peripheral circuitry and a burst counter. All input registers controlled by an input clock pair (CK and CK ) are latched on the positive edge of CK and CK . These products are suitable for application which require synchronous operation, high speed, low voltage, high density and wide bit configuration. Specification Features Density: 576M bit SRAM-type interface Organization Double-data-rate architecture - Separate I/O: 8M words x 9 bits x 8 banks PLL circuitry 4M words x 18 bits x 8 banks Cycle time: 1.875 ns tRC = 15 ns Operating frequency: 533 / 400 / 300 MHz 2.5 ns tRC = 15 ns 2.5 ns tRC = 20 ns Interface: HSTL I/O 3.3 ns tRC = 20 ns Package: 144-pin TAPE FBGA Non-multiplexed addresses - Package size: 18.5 x 11 Multiplexing option is available. - Leaded and Lead free Power supply Data mask for WRITE commands - 2.5 V VEXT Differential input clocks (CK and CK ) - 1.8 V VDD Differential input data clocks (DK and DK ) - 1.5 V or 1.8 V VDDQ Refresh command Data valid signal (QVLD) - Auto Refresh Programmable burst length: 2 / 4 / 8 (x9 / x18) - 16K cycle / 32 ms for each bank User programmable impedance output (25 - 60 ) - 128K cycle / 32 ms for total Operating case temperature : Tc = 0 to 95C JTAG boundary scan R10DS0064EJ0300 Rev.3.00 Page 1 of 51 Oct 01, 2012 PD48576109, PD48576118 Ordering Information Part number Cycle Clock Random Organization Core Supply Core Supply Output Supply Package Time Frequency Cycle (word x bit) Voltage Voltage Voltage (VEXT) (VDD) (VDDQ) ns MHz ns V V V PD48576109FF-E18-DW1-A 1.875 533 15 64 M x 9 2.5 + 0.13 1.8 0.1 1.5 0.1 144-pin PD48576109FF-E24-DW1-A 2.5 400 15 2.5 0.12 or TAPE FBGA PD48576109FF-E25-DW1-A 2.5 400 20 1.8 0.1 (18.5 x 11) PD48576109FF-E33-DW1-A 3.3 300 20 PD48576118FF-E18-DW1-A 1.875 533 15 32 M x 18 Lead-free PD48576118FF-E24-DW1-A 2.5 400 15 PD48576118FF-E25-DW1-A 2.5 400 20 PD48576118FF-E33-DW1-A 3.3 300 20 PD48576109FF-E18-DW1 1.875 533 15 64 M x 9 2.5 + 0.13 1.8 0.1 1.5 0.1 144-pin PD48576109FF-E24-DW1 2.5 400 15 2.5 0.12 or TAPE FBGA PD48576109FF-E25-DW1 2.5 400 20 1.8 0.1 (18.5 x 11) PD48576109FF-E33-DW1 3.3 300 20 PD48576118FF-E18-DW1 1.875 533 15 32 M x 18 Lead PD48576118FF-E24-DW1 2.5 400 15 PD48576118FF-E25-DW1 2.5 400 20 PD48576118FF-E33-DW1 3.3 300 20 R10DS0064EJ0300 Rev.3.00 Page 2 of 51 Oct 01, 2012

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
ID4
IDT
IDT, Integrated Device Technology Inc
INTEGRATED DEVICE
INTEGRATED DEVICE TECHNOLOGY
INTEGRATED DEVICES TECH AID
Intersil
INTERSIL - FGC
Intersil(Renes as Electronics)
Intersil(Renesas Electronics)
ITS
REA
RENESAS
RENESAS (IDT)
RENESAS (INTERSIL)
Renesas / IDT
Renesas / Intersil
Renesas Electronics
Renesas Electronics America
RENESAS TECHNOLOGY
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