X-On Electronics has gained recognition as a prominent supplier of BR24G01FVT-3AGE2 EEPROM across the USA, India, Europe, Australia, and various other global locations. BR24G01FVT-3AGE2 EEPROM are a product manufactured by ROHM. We provide cost-effective solutions for EEPROM, ensuring timely deliveries around the world.

BR24G01FVT-3AGE2 ROHM

BR24G01FVT-3AGE2 electronic component of ROHM
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Part No.BR24G01FVT-3AGE2
Manufacturer: ROHM
Category: EEPROM
Description: ROHM Semiconductor EEPROM I2C BUS 1K(128x8bit) EEPROM
Datasheet: BR24G01FVT-3AGE2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.322 ea
Line Total: USD 0.32 
Availability - 2702
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2702
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 0.322
10 : USD 0.2576
100 : USD 0.238
500 : USD 0.2289
1000 : USD 0.222
3000 : USD 0.1851
9000 : USD 0.176
24000 : USD 0.1713
45000 : USD 0.1702

   
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We are delighted to provide the BR24G01FVT-3AGE2 from our EEPROM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BR24G01FVT-3AGE2 and other electronic components in the EEPROM category and beyond.

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Datasheet Serial EEPROM series Standard EEPROM 2 I C BUS EEPROM (2-Wire) BR24G01-3A General Description 2 BR24G01-3A is a serial EEPROM of I C BUS interface method Packages W(Typ.) x D(Typ.)x H(Max.) Features All controls available by 2 ports of serial clock(SCL) and serial data(SDA) Other devices than EEPROM can be connected to the Not Recommended for same port, saving microcontroller port New Designs 1.6V to 5.5V single power source action most suitable for battery use 1MHz action is possible (1.7V to 5.5V) DIP-T8 TSSOP-B8J 3.00mm x 4.90mm x 1.10mm 9.30mm x 6.50mm x 7.10mm Up to 8 bytes in page write mode Self-timed programming cycle Low current consumption Prevention of write mistake Write (write protect) function added Prevention of write mistake at low voltage MSOP8 SOP8 More than 1 million write cycles 2.90mm x 4.00mm x 0.90mm 5.00mm x 6.20mm x 1.71mm More than 40 years data retention Noise filter built in SCL / SDA terminal Initial delivery state FFh VSON008X2030 SOP-J8 2.00mm x 3.00mm x 0.60mm 4.90mm x 6.00mm x 1.65mm TSSOP-B8 3.00mm x 6.40mm x 1.20mm Figure 1. BR24G01-3A Power Source Capacity Bit Format Type Package Voltage *1 BR24G01-3A DIP-T8 BR24G01F-3A SOP8 BR24G01FJ-3A SOP-J8 1Kbit 1288 BR24G01FVT-3A 1.6V to 5.5V TSSOP-B8 BR24G01FVJ-3A TSSOP-B8J BR24G01FVM-3A MSOP8 BR24G01NUX-3A VSON008X2030 *1 Not Recommended for New Designs. Product structure : Silicon monolithic integrated circuit This product is not designed protection against radioactive rays .w ww.rohm.com TSZ02201-0R2R0G100580-1-2 2014 ROHM Co., Ltd. All rights reserved. 1/33 TSZ22111 14 001 11.Jun.2019 Rev.004 BR24G01-3A Absolute Maximum Ratings (Ta=25C) Parameter Symbol Ratings Unit Remarks Supply voltage VCC -0.3 to +6.5 V 450 (SOP8) When using at Ta=25C or higher 4.5mW to be reduced per 1C. 450 (SOP-J8) When using at Ta=25C or higher 4.5mW to be reduced per 1C. 330 (TSSOP-B8) When using at Ta=25C or higher 3.3mW to be reduced per 1C. Power Dissipation Pd 310 (TSSOP-B8J) mW When using at Ta=25C or higher 3.1mW to be reduced per 1C. 310 (MSOP8) When using at Ta=25C or higher 3.1mW to be reduced per 1C. 300 (VSON008X2030) When using at Ta=25C or higher 3.0mW to be reduced per 1C. *1 800 (DIP-T8 ) When using at Ta=25C or higher 8.0mW to be reduced per 1C. Storage Temperature Tstg -65 to +150 C Operation Temperature Topr -40 to +85 C The Max value of input voltage / output voltage is not over 6.5V. Input Voltage / - -0.3 to Vcc+1.0 V When the pulse width is 50ns or less, the Min value of input voltage Output Voltage / output voltage is not under -0.8V. Junction Temperature Tjmax 150 C Junction temperature at the storage condition Electrostatic discharge voltage VESD -4000 to +4000 V (human body model) *1 Not Recommended for New Designs. Memory Cell Characteristics (Ta=25C, Vcc=1.6V to 5.5V) Limits Parameter Unit Min. Typ. Max *2 Write cycles 1,000,000 - - Times *2 Data retention 40 - - Years *2 Not 100% TESTED Recommended Operating Ratings Parameter Symbol Ratings Unit Supply voltage Vcc 1.6 to 5.5 V Input voltage V 0 to Vcc IN DC Characteristics (Unless otherwise specified, Ta=-40 to +85C, Vcc =1.6 to 5.5V) Limits Parameter Symbol Unit Conditions Min. Typ. Max. Input High Voltage1 VIH1 0.7Vcc - Vcc+1.0 V 1.7VVcc5.5V *3 Input Low Voltage1 VIL1 -0.3 - 0.3Vcc V 1.7VVcc5.5V Input High Voltage2 VIH2 0.8Vcc - Vcc+1.0 V 1.6VVcc<1.7V *3 Input Low Voltage2 VIL2 -0.3 - 0.2Vcc V 1.6VVcc<1.7V Output Low Voltage1 VOL1 - - 0.4 V IOL=3.0mA, 2.5VVcc5.5V (SDA) Output Low Voltage2 VOL2 - - 0.2 V IOL=0.7mA, 1.6VVcc<2.5V (SDA) Input Leakage Current ILI -1 - 1 A VIN=0 to Vcc Output Leakage Current ILO -1 - 1 A VOUT=0 to Vcc (SDA) Vcc=5.5V, fSCL=1MHz, tWR=5ms, Supply Current (Write) ICC1 - - 2.0 Byte write, Page write mA Vcc=5.5V, fSCL=1MHz Random read, current read, Supply Current (Read) ICC2 - - 2.0 sequential read Vcc=5.5V, SDA, SCL=Vcc Standby Current ISB - - 2.0 A A0, A1, A2=GND,WP=GND *3 When the pulse width is 50ns or less, it is -0.8V. www.rohm.com TSZ02201-0R2R0G100580-1-2 2014 ROHM Co., Ltd. All rights reserved. 2/33 TSZ22111 15 001 11.Jun.2019 Rev.004

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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