X-On Electronics has gained recognition as a prominent supplier of BR24G16FVJ-3AGTE2 EEPROM across the USA, India, Europe, Australia, and various other global locations. BR24G16FVJ-3AGTE2 EEPROM are a product manufactured by ROHM. We provide cost-effective solutions for EEPROM, ensuring timely deliveries around the world.

BR24G16FVJ-3AGTE2 ROHM

BR24G16FVJ-3AGTE2 electronic component of ROHM
BR24G16FVJ-3AGTE2 ROHM
BR24G16FVJ-3AGTE2 EEPROM
BR24G16FVJ-3AGTE2  Semiconductors

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Part No. BR24G16FVJ-3AGTE2
Manufacturer: ROHM
Category: EEPROM
Description: ROHM Semiconductor EEPROM I2C BUS 16K 2048 8bit EEPROM
Datasheet: BR24G16FVJ-3AGTE2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4388 ea
Line Total: USD 0.44 
Availability - 814
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
814
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 0.4388
10 : USD 0.3662
100 : USD 0.3093
500 : USD 0.2882
1000 : USD 0.2816
2500 : USD 0.2409
10000 : USD 0.231
25000 : USD 0.231

   
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We are delighted to provide the BR24G16FVJ-3AGTE2 from our EEPROM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BR24G16FVJ-3AGTE2 and other electronic components in the EEPROM category and beyond.

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Datasheet Serial EEPROM series Standard EEPROM 2 I C BUS EEPROM (2-Wire) BR24G16-3A General Description 2 BR24G16-3A is a serial EEPROM of I C BUS interface method Packages W(Typ.) x D(Typ.)x H(Max.) Features 2 Completely conforming to the world standard I C BUS. All controls available by 2 ports of serial clock(SCL) and serial data(SDA) Not Recommended for Other devices than EEPROM can be connected to the same port, saving microcontroller port New Designs 1.6V to 5.5V single power source action most suitable for battery use DIP-T8 TSSOP-B8J 1MHz action is possible (1.7V to 5.5V) 9.30mm x 6.50mm x 7.10mm 3.00mm x 4.90mm x 1.10mm Up to 16 bytes in page write mode Self-timed programming cycle Low current consumption Prevention of write mistake Write (write protect) function added MSOP8 SOP8 Prevention of write mistake at low voltage 2.90mm x 4.00mm x 0.90mm 5.00mm x 6.20mm x 1.71mm More than 1 million write cycles More than 40 years data retention Noise filter built in SCL / SDA terminal Initial delivery state FFh SOP-J8 VSON008X2030 4.90mm x 6.00mm x 1.65mm 2.00mm x 3.00mm x 0.60mm TSSOP-B8 3.00mm x 6.40mm x 1.20mm Figure 1. BR24G16-3A Power Source Capacity Bit Format Type Package Voltage *1 BR24G16-3A DIP-T8 BR24G16F-3A SOP8 BR24G16FJ-3A SOP-J8 16Kbit 2K8 BR24G16FVT-3A 1.6V to 5.5V TSSOP-B8 BR24G16FVJ-3A TSSOP-B8J BR24G16FVM-3A MSOP8 BR24G16NUX-3A VSON008X2030 *1 Not Recommended for New Designs. Product structure: Silicon monolithic integrated circuit This product is not designed protection against radioactive rays .w ww.rohm.com TSZ02201-0R2R0G100540-1-2 2014 ROHM Co., Ltd. All rights reserved. 1/33 TSZ22111 14 001 11.Jun.2019 Rev.004 BR24G16-3A Absolute Maximum Ratings (Ta=25C) Parameter Symbol Ratings Unit Remarks Supply Voltage VCC -0.3 to +6.5 V 450 (SOP8) When using at Ta=25C or higher 4.5mW to be reduced per 1C. 450 (SOP-J8) When using at Ta=25C or higher 4.5mW to be reduced per 1C. 330 (TSSOP-B8) When using at Ta=25C or higher 3.3mW to be reduced per 1C. Power Dissipation Pd 310 (TSSOP-B8J) mW When using at Ta=25C or higher 3.1mW to be reduced per 1C. 310 (MSOP8) When using at Ta=25C or higher 3.1mW to be reduced per 1C. 300 (VSON008X2030) When using at Ta=25C or higher 3.0mW to be reduced per 1C. *1 800 (DIP-T8 ) When using at Ta=25C or higher 8.0mW to be reduced per 1C. Storage Temperature Tstg -65 to +150 C Operation Temperature Topr -40 to +85 C The Max value of Input voltage / output voltage is not over 6.5V. Input Voltage/ -0.3 to Vcc+1.0 V When the pulse width is 50ns or less, the Min value of input voltage Output Voltage / output voltage is not under -1.0V. Junction Temperature Tjmax 150 C Junction temperature at the storage condition Electrostatic discharge voltage VESD -4000 to +4000 V (human body model) *1 Not Recommended for New Designs. Memory Cell Characteristics (Ta=25C, Vcc=1.6V to 5.5V) Limits Parameter Unit Min. Typ. Max *2 Write cycles 1,000,000 - - Times *2 40 - - Years Data retention *2 Not 100% TESTED Recommended Operating Ratings Parameter Symbol Ratings Unit Supply voltage Vcc 1.6 to 5.5 V Input voltage VIN 0 to Vcc DC Characteristics (Unless otherwise specified, Ta=-40 to +85C, Vcc =1.6 to 5.5V) Limits Parameter Symbol Unit Conditions Min. Typ. Max. Input High Voltage1 VIH1 0.7Vcc - Vcc+1.0 V 1.7VVcc5.5V *3 Input Low Voltage1 VIL1 -0.3 - 0.3Vcc V 1.7VVcc5.5V Input High Voltage2 VIH2 0.8Vcc - Vcc+1.0 V 1.6VVcc<1.7V *3 Input Low Voltage2 VIL2 -0.3 - 0.2Vcc V 1.6VVcc<1.7V Output Low Voltage1 VOL1 - - 0.4 V IOL=3.0mA, 2.5VVcc5.5V (SDA) Output Low Voltage2 VOL2 - - 0.2 V I =0.7mA, 1.6VVcc<2.5V (SDA) OL Input Leakage Current ILI -1 - 1 A VIN=0 to Vcc Output Leakage Current ILO -1 - 1 A VOUT=0 to Vcc (SDA) Vcc=5.5V, fSCL=1MHz, tWR=5ms, Supply Current (Write) ICC1 - - 2.0 Byte write, page write mA Vcc=5.5V, fSCL=1MHz Supply Current (Read) ICC2 - - 2.0 Random read, current read, sequential read Vcc=5.5V, SDA, SCL=Vcc Standby Current ISB - - 2.0 A A0, A1, A2=GND,WP=GND *3 When the pulse width is 50ns or less, it is -1.0V. www.rohm.com TSZ02201-0R2R0G100540-1-2 2014 ROHM Co., Ltd. All rights reserved. 2/33 TSZ22111 15 001 11.Jun.2019 Rev.004

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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