Datasheet Serial EEPROM series Standard EEPROM 2 I C BUS EEPROM (2-Wire) BR24G16-3A General Description 2 BR24G16-3A is a serial EEPROM of I C BUS interface method Packages W(Typ.) x D(Typ.)x H(Max.) Features 2 Completely conforming to the world standard I C BUS. All controls available by 2 ports of serial clock(SCL) and serial data(SDA) Not Recommended for Other devices than EEPROM can be connected to the same port, saving microcontroller port New Designs 1.6V to 5.5V single power source action most suitable for battery use DIP-T8 TSSOP-B8J 1MHz action is possible (1.7V to 5.5V) 9.30mm x 6.50mm x 7.10mm 3.00mm x 4.90mm x 1.10mm Up to 16 bytes in page write mode Self-timed programming cycle Low current consumption Prevention of write mistake Write (write protect) function added MSOP8 SOP8 Prevention of write mistake at low voltage 2.90mm x 4.00mm x 0.90mm 5.00mm x 6.20mm x 1.71mm More than 1 million write cycles More than 40 years data retention Noise filter built in SCL / SDA terminal Initial delivery state FFh SOP-J8 VSON008X2030 4.90mm x 6.00mm x 1.65mm 2.00mm x 3.00mm x 0.60mm TSSOP-B8 3.00mm x 6.40mm x 1.20mm Figure 1. BR24G16-3A Power Source Capacity Bit Format Type Package Voltage *1 BR24G16-3A DIP-T8 BR24G16F-3A SOP8 BR24G16FJ-3A SOP-J8 16Kbit 2K8 BR24G16FVT-3A 1.6V to 5.5V TSSOP-B8 BR24G16FVJ-3A TSSOP-B8J BR24G16FVM-3A MSOP8 BR24G16NUX-3A VSON008X2030 *1 Not Recommended for New Designs. Product structure: Silicon monolithic integrated circuit This product is not designed protection against radioactive rays .w ww.rohm.com TSZ02201-0R2R0G100540-1-2 2014 ROHM Co., Ltd. All rights reserved. 1/33 TSZ22111 14 001 11.Jun.2019 Rev.004 BR24G16-3A Absolute Maximum Ratings (Ta=25C) Parameter Symbol Ratings Unit Remarks Supply Voltage VCC -0.3 to +6.5 V 450 (SOP8) When using at Ta=25C or higher 4.5mW to be reduced per 1C. 450 (SOP-J8) When using at Ta=25C or higher 4.5mW to be reduced per 1C. 330 (TSSOP-B8) When using at Ta=25C or higher 3.3mW to be reduced per 1C. Power Dissipation Pd 310 (TSSOP-B8J) mW When using at Ta=25C or higher 3.1mW to be reduced per 1C. 310 (MSOP8) When using at Ta=25C or higher 3.1mW to be reduced per 1C. 300 (VSON008X2030) When using at Ta=25C or higher 3.0mW to be reduced per 1C. *1 800 (DIP-T8 ) When using at Ta=25C or higher 8.0mW to be reduced per 1C. Storage Temperature Tstg -65 to +150 C Operation Temperature Topr -40 to +85 C The Max value of Input voltage / output voltage is not over 6.5V. Input Voltage/ -0.3 to Vcc+1.0 V When the pulse width is 50ns or less, the Min value of input voltage Output Voltage / output voltage is not under -1.0V. Junction Temperature Tjmax 150 C Junction temperature at the storage condition Electrostatic discharge voltage VESD -4000 to +4000 V (human body model) *1 Not Recommended for New Designs. Memory Cell Characteristics (Ta=25C, Vcc=1.6V to 5.5V) Limits Parameter Unit Min. Typ. Max *2 Write cycles 1,000,000 - - Times *2 40 - - Years Data retention *2 Not 100% TESTED Recommended Operating Ratings Parameter Symbol Ratings Unit Supply voltage Vcc 1.6 to 5.5 V Input voltage VIN 0 to Vcc DC Characteristics (Unless otherwise specified, Ta=-40 to +85C, Vcc =1.6 to 5.5V) Limits Parameter Symbol Unit Conditions Min. Typ. Max. Input High Voltage1 VIH1 0.7Vcc - Vcc+1.0 V 1.7VVcc5.5V *3 Input Low Voltage1 VIL1 -0.3 - 0.3Vcc V 1.7VVcc5.5V Input High Voltage2 VIH2 0.8Vcc - Vcc+1.0 V 1.6VVcc<1.7V *3 Input Low Voltage2 VIL2 -0.3 - 0.2Vcc V 1.6VVcc<1.7V Output Low Voltage1 VOL1 - - 0.4 V IOL=3.0mA, 2.5VVcc5.5V (SDA) Output Low Voltage2 VOL2 - - 0.2 V I =0.7mA, 1.6VVcc<2.5V (SDA) OL Input Leakage Current ILI -1 - 1 A VIN=0 to Vcc Output Leakage Current ILO -1 - 1 A VOUT=0 to Vcc (SDA) Vcc=5.5V, fSCL=1MHz, tWR=5ms, Supply Current (Write) ICC1 - - 2.0 Byte write, page write mA Vcc=5.5V, fSCL=1MHz Supply Current (Read) ICC2 - - 2.0 Random read, current read, sequential read Vcc=5.5V, SDA, SCL=Vcc Standby Current ISB - - 2.0 A A0, A1, A2=GND,WP=GND *3 When the pulse width is 50ns or less, it is -1.0V. www.rohm.com TSZ02201-0R2R0G100540-1-2 2014 ROHM Co., Ltd. All rights reserved. 2/33 TSZ22111 15 001 11.Jun.2019 Rev.004