Datasheet Serial EEPROM Series Standard EEPROM 2 I C BUS EEPROM (2-Wire) BR24G256-3 General Description 2 BR24G256-3 is a 256Kbit serial EEPROM of I C BUS Interface Method Features Packages W(Typ) x D(Typ) x H(Max) 2 Completely conforming to the world standard I C BUS. Not Recommended for All controls available by 2 ports of serial clock New Designs (SCL) and serial data (SDA) Other devices than EEPROM can be connected to DIP-T8 SSOP-B8 the same port, saving microcontroller port 9.30mm x 6.50mm x 7.10mm 3.00mm x 6.40mm x 1.35mm 1.6V to 5.5V Single Power Source Operation most suitable for battery use 1.6V to 5.5V wide limit of operating voltage, possible FAST MODE 400kHz operation Up to 64 Byte in Page Write Mode Bit Format 32K x 8 Self-timed Programming Cycle SOP8 TSSOP-B8 Low Current Consumption 5.00mm x 6.20mm x 1.71mm 3.00mm x 6.40mm x 1.20mm Prevention of Write Mistake Write (Write Protect) Function added Prevention of Write Mistake at Low Voltage More than 1 million write cycles More than 40 years data retention SOP- J8M TSSOP-B8M Noise filter built in SCL / SDA terminal 4.90mm x 6.00mm x 1.80mm 3.00mm x 6.40mm x 1.10mm Initial delivery state FFh SOP- J8 4.90mm x 6.00mm x 1.65mm Figure 1. Product structure : Silicon monolithic integrated circuit This product has no designed protection against radioactive rays www.rohm.com TSZ02201-0R2R0G100240-1-2 2013 ROHM Co., Ltd. All rights reserved. 1/33 TSZ22111 14 001 11.Jun.2019 Rev.007 Datasheet BR24G256-3 Absolute Maximum Ratings (Ta=25C) Parameter Symbol Rating Unit Remark Supply Voltage Vcc -0.3 to +6.5 V 0.45 (SOP8) Derate by 4.5mW/C when operating above Ta=25C 0.45 (SOP-J8M) Derate by 4.5mW/C when operating above Ta=25C 0.45 (SOP-J8) Derate by 4.5mW/C when operating above Ta=25C Power Dissipation Pd 0.30 (SSOP-B8) W Derate by 3.0mW/C when operating above Ta=25C 0.33 (TSSOP-B8) Derate by 3.3mW/C when operating above Ta=25C 0.33 (TSSOP-B8M) Derate by 3.3mW/C when operating above Ta=25C (1) 0.80 (DIP-T8 ) Derate by 8.0mW/C when operating above Ta=25C Storage Temperature Tstg -65 to +150 C Operating Temperature Topr -40 to +85 C The Max value of input voltage/output voltage is not over 6.5V. Input Voltage / When the pulse width is 50ns or less, the Min value of input - -0.3 to Vcc+1.0 V Output Voltage voltage/output voltage is not lower than -1.0V. Junction Tjmax 150 C Junction temperature at the storage condition Temperature Electrostatic discharge voltage V -4000 to +4000 V ESD (human body model) (1) Not Recommended for New Designs. Memory Cell Characteristics (Ta=25C , Vcc=1.6V to 5.5V) Limit Parameter Unit Min Typ Max (2) Write Cycles 1,000,000 - - Times (2) Data Retention 40 - - Years (2) Not 100% TESTED Recommended Operating Ratings Parameter Symbol Rating Unit Power Source Voltage Vcc 1.6 to 5.5 V Input Voltage V 0 to Vcc IN DC Characteristics (Unless otherwise specified, Ta=-40C to +85C , VCC=1.6V to 5.5V) Limit Parameter Symbol Unit Conditions Min Typ Max Input High Voltage1 VIH1 0.7Vcc - Vcc+1.0 V 1.7VVCC5.5V (3) Input Low Voltage1 VIL1 -0.3 - +0.3VCC V 1.7VVCC5.5V Input High Voltage2 V 0.8Vcc - Vcc+1.0 V 1.6VV <1.7V IH2 CC (3) Input Low Voltage2 VIL2 -0.3 - +0.2Vcc V 1.6VVCC<1.7V Output Low Voltage1 V - - 0.4 V I =3.0mA, 2.5VV 5.5V (SDA) OL1 OL CC Output Low Voltage2 VOL2 - - 0.2 V IOL=0.7mA, 1.6VVCC<2.5V (SDA) Input Leakage Current ILI -1 - +1 A VIN=0 to Vcc Output Leakage Current I -1 - +1 A V =0 to Vcc (SDA) LO OUT VCC=5.5V, fSCL=400kHz, tWR=5ms, Supply Current (Write) ICC1 - - 2.5 mA Byte write, page write Vcc=5.5V, fSCL=400kHz Supply Current (Read) ICC2 - - 0.5 mA Random read, current read, sequential read V =5.5V, SDA, SCL=Vcc CC Standby Current I - - 2.0 A SB A0, A1, A2=GND, WP=GND (3) When the pulse width is 50ns or less, it is -1.0V. www.rohm.com TSZ02201-0R2R0G100240-1-2 2013 ROHM Co., Ltd. All rights reserved. 2/33 TSZ22111 15 001 11.Jun.2019 Rev.007