X-On Electronics has gained recognition as a prominent supplier of BR24G256FVT-3GE2 EEPROM across the USA, India, Europe, Australia, and various other global locations. BR24G256FVT-3GE2 EEPROM are a product manufactured by ROHM. We provide cost-effective solutions for EEPROM, ensuring timely deliveries around the world.

BR24G256FVT-3GE2 ROHM

BR24G256FVT-3GE2 electronic component of ROHM
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Part No.BR24G256FVT-3GE2
Manufacturer: ROHM
Category: EEPROM
Description: EEPROM I2C BUS 256K 32768 8bit EEPROM
Datasheet: BR24G256FVT-3GE2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6468 ea
Line Total: USD 0.65 
Availability - 5236
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5236
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 0.6468
10 : USD 0.583
100 : USD 0.539
500 : USD 0.5269
1000 : USD 0.5082
3000 : USD 0.4675
6000 : USD 0.4675
9000 : USD 0.4345
24000 : USD 0.429

2522
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 91
Multiples : 1
91 : USD 1.2311
100 : USD 1.1761
250 : USD 1.1289
500 : USD 1.0881
1000 : USD 1.0526
2500 : USD 1.0216

   
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RoHS - XON
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Operating Supply Voltage
Cnhts
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Mxhts
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We are delighted to provide the BR24G256FVT-3GE2 from our EEPROM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BR24G256FVT-3GE2 and other electronic components in the EEPROM category and beyond.

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Datasheet Serial EEPROM Series Standard EEPROM 2 I C BUS EEPROM (2-Wire) BR24G256-3 General Description 2 BR24G256-3 is a 256Kbit serial EEPROM of I C BUS Interface Method Features Packages W(Typ) x D(Typ) x H(Max) 2 Completely conforming to the world standard I C BUS. Not Recommended for All controls available by 2 ports of serial clock New Designs (SCL) and serial data (SDA) Other devices than EEPROM can be connected to DIP-T8 SSOP-B8 the same port, saving microcontroller port 9.30mm x 6.50mm x 7.10mm 3.00mm x 6.40mm x 1.35mm 1.6V to 5.5V Single Power Source Operation most suitable for battery use 1.6V to 5.5V wide limit of operating voltage, possible FAST MODE 400kHz operation Up to 64 Byte in Page Write Mode Bit Format 32K x 8 Self-timed Programming Cycle SOP8 TSSOP-B8 Low Current Consumption 5.00mm x 6.20mm x 1.71mm 3.00mm x 6.40mm x 1.20mm Prevention of Write Mistake Write (Write Protect) Function added Prevention of Write Mistake at Low Voltage More than 1 million write cycles More than 40 years data retention SOP- J8M TSSOP-B8M Noise filter built in SCL / SDA terminal 4.90mm x 6.00mm x 1.80mm 3.00mm x 6.40mm x 1.10mm Initial delivery state FFh SOP- J8 4.90mm x 6.00mm x 1.65mm Figure 1. Product structure : Silicon monolithic integrated circuit This product has no designed protection against radioactive rays www.rohm.com TSZ02201-0R2R0G100240-1-2 2013 ROHM Co., Ltd. All rights reserved. 1/33 TSZ22111 14 001 11.Jun.2019 Rev.007 Datasheet BR24G256-3 Absolute Maximum Ratings (Ta=25C) Parameter Symbol Rating Unit Remark Supply Voltage Vcc -0.3 to +6.5 V 0.45 (SOP8) Derate by 4.5mW/C when operating above Ta=25C 0.45 (SOP-J8M) Derate by 4.5mW/C when operating above Ta=25C 0.45 (SOP-J8) Derate by 4.5mW/C when operating above Ta=25C Power Dissipation Pd 0.30 (SSOP-B8) W Derate by 3.0mW/C when operating above Ta=25C 0.33 (TSSOP-B8) Derate by 3.3mW/C when operating above Ta=25C 0.33 (TSSOP-B8M) Derate by 3.3mW/C when operating above Ta=25C (1) 0.80 (DIP-T8 ) Derate by 8.0mW/C when operating above Ta=25C Storage Temperature Tstg -65 to +150 C Operating Temperature Topr -40 to +85 C The Max value of input voltage/output voltage is not over 6.5V. Input Voltage / When the pulse width is 50ns or less, the Min value of input - -0.3 to Vcc+1.0 V Output Voltage voltage/output voltage is not lower than -1.0V. Junction Tjmax 150 C Junction temperature at the storage condition Temperature Electrostatic discharge voltage V -4000 to +4000 V ESD (human body model) (1) Not Recommended for New Designs. Memory Cell Characteristics (Ta=25C , Vcc=1.6V to 5.5V) Limit Parameter Unit Min Typ Max (2) Write Cycles 1,000,000 - - Times (2) Data Retention 40 - - Years (2) Not 100% TESTED Recommended Operating Ratings Parameter Symbol Rating Unit Power Source Voltage Vcc 1.6 to 5.5 V Input Voltage V 0 to Vcc IN DC Characteristics (Unless otherwise specified, Ta=-40C to +85C , VCC=1.6V to 5.5V) Limit Parameter Symbol Unit Conditions Min Typ Max Input High Voltage1 VIH1 0.7Vcc - Vcc+1.0 V 1.7VVCC5.5V (3) Input Low Voltage1 VIL1 -0.3 - +0.3VCC V 1.7VVCC5.5V Input High Voltage2 V 0.8Vcc - Vcc+1.0 V 1.6VV <1.7V IH2 CC (3) Input Low Voltage2 VIL2 -0.3 - +0.2Vcc V 1.6VVCC<1.7V Output Low Voltage1 V - - 0.4 V I =3.0mA, 2.5VV 5.5V (SDA) OL1 OL CC Output Low Voltage2 VOL2 - - 0.2 V IOL=0.7mA, 1.6VVCC<2.5V (SDA) Input Leakage Current ILI -1 - +1 A VIN=0 to Vcc Output Leakage Current I -1 - +1 A V =0 to Vcc (SDA) LO OUT VCC=5.5V, fSCL=400kHz, tWR=5ms, Supply Current (Write) ICC1 - - 2.5 mA Byte write, page write Vcc=5.5V, fSCL=400kHz Supply Current (Read) ICC2 - - 0.5 mA Random read, current read, sequential read V =5.5V, SDA, SCL=Vcc CC Standby Current I - - 2.0 A SB A0, A1, A2=GND, WP=GND (3) When the pulse width is 50ns or less, it is -1.0V. www.rohm.com TSZ02201-0R2R0G100240-1-2 2013 ROHM Co., Ltd. All rights reserved. 2/33 TSZ22111 15 001 11.Jun.2019 Rev.007

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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