Datasheet Serial EEPROM Series Standard EEPROM 2 I C BUS EEPROM (2-Wire) BR24T128-W General Description 2 BR24T128-W series is a serial EEPROM of I C BUS Interface Method Features Packages W(Typ) x D(Typ) x H(Max) 2 Completely conforming to the world standard I C BUS. All controls available by 2 ports of serial clock (SCL) and serial data (SDA) DIP-T8 TSSOP-B8 Other devices than EEPROM can be connected to 9.30mm x 6.50mm x 7.10mm 3.00mm x 6.40mm x 1.20mm the same port, saving microcontroller port 1.6V to 5.5V Single Power Source Operation most suitable for battery use 1.6V to 5.5V wide limit of operating voltage, possible FAST MODE 400KHz operation DIP8K TSSOP-B8J Page Write Mode useful for initial value write at 3.00mm x 4.90mm x 1.10mm 9.27mm x 6.35mm x 8.63mm factory shipment Self-timed Programming Cycle Low Current Consumption Prevention of Write Mistake Write (Write Protect) Function Added SOP8 Prevention of Write Mistake at Low Voltage MSOP8 5.00mm x 6.20mm x 1.71mm More than 1 million write cycles 2.90mm x 4.00mm x 0.90mm More than 40 years data retention Noise filter built in SCL / SDA terminal Initial delivery state FFh SOP- J8 VSON008X2030 4.90mm x 6.00mm x 1.65mm 2.00mm x 3.00mm x 0.60mm SSOP-B8 3.00mm x 6.40mm x 1.35mm Figure 1. BR24T128-W Power Source Capacity Bit Format Type Package Voltage (1) BR24T128-W DIP-T8 BR24T128-WZ DIP8K BR24T128F-W SOP8 BR24T128FJ-W SOP-J8 128Kbit 16K8 BR24T128FV-W 1.6V to 5.5V SSOP-B8 BR24T128FVT-W TSSOP-B8 BR24T128FVJ-W TSSOP-B8J BR24T128FVM-W MSOP8 BR24T128NUX-W VSON008X2030 (1) Not Recommended for New Designs. Recommend BR24T128-WZ. Product structureSilicon monolithic integrated circuit This product has no designed protection against radioactive rays www.rohm.com TSZ02201-0R2R0G100130-1-2 2013 ROHM Co., Ltd. All rights reserved. 1/34 TSZ2211114001 03.Sep.2018 Rev.004 Datasheet BR24T128-W Absolute Maximum Ratings (Ta=25C) Parameter Symbol Rating Unit Remark Supply Voltage Vcc -0.3 to +6.5 V 450 (SOP8) Derate by 4.5mW/C when operating above Ta=25C 450 (SOP-J8) Derate by 4.5mW/C when operating above Ta=25C 300 (SSOP-B8) Derate by 3.0mW/C when operating above Ta=25C 330 (TSSOP-B8) Derate by 3.3mW/C when operating above Ta=25C 310 (TSSOP-B8J) Derate by 3.1mW/C when operating above Ta=25C Power Dissipation Pd mW 310 (MSOP8) Derate by 3.1mW/C when operating above Ta=25C 300 (VSON008X2030) Derate by 3.0mW/C when operating above Ta=25C (1) 800 (DIP-T8 ) Derate by 8.0mW/C when operating above Ta=25C Derate by 8.52mW/C when operating above Ta=25C 852 (DIP8K) When mounted (on 114.5 mm 101.5 mm 1.6 mm thick, glass epoxy on single-layer substrate). Storage Temperature Tstg -65 to +150 C Operating Temperature Topr -40 to +85 C The Max value of input voltage / output voltage is not over 6.5V. Input Voltage / -0.3 to Vcc+1.0 V When the pulse width is 50ns or less, the Min value of input voltage Output Voltage / output voltage is not lower than -1.0V. Junction Tjmax 150 C Junction temperature at the storage condition Temperature Electrostatic discharge voltage V -4000 to +4000 V ESD (human body model) (1) Not Recommended for New Designs. Recommend BR24T128-WZ. Memory Cell Characteristics (Ta=25C, Vcc=1.6V to 5.5V) Limit Parameter Unit Min Typ Max (1) Write Cycles 1,000,000 - - Times (1) Data Retention 40 - - Years (1) Not 100% TESTED Recommended Operating Ratings Parameter Symbol Rating Unit Power Source Voltage Vcc 1.6 to 5.5 V Input Voltage V 0 to Vcc IN DC Characteristics (Unless otherwise specified, Ta=-40C to +85C, Vcc=1.6V to 5.5V) Limit Parameter Symbol Unit Conditions Min Typ Max Input HIgh Voltage1 V 0.7Vcc - Vcc+1.0 V 1.7VVcc 5.5V IH1 (2) Input Low Voltage1 V -0.3 - +0.3Vcc V 1.7VVcc 5.5V IL1 Input HIgh Voltage2 V 0.8Vcc - Vcc+1.0 V 1.6VVcc 1.7V IH2 (2) Input Low Voltage2 V -0.3 - +0.2Vcc V 1.6VVcc 1.7V IL2 Output Low Voltage1 V - - 0.4 V I =3.0mA, 2.5VVcc5.5V (SDA) OL1 OL Output Low Voltage2 V - - 0.2 V I =0.7mA, 1.6VVcc2.5V (SDA) OL2 OL Input Leakage Current I -1 - +1 A V =0 to Vcc LI IN Output Leakage Current I -1 - +1 A V =0 to Vcc (SDA) LO OUT Vcc=5.5V, f =400kHz, t =5ms, SCL WR Supply Current (Write) I - - 2.5 mA CC1 Byte write, Page write Vcc=5.5V, f =400kHz SCL Supply Current (Read) ICC2 - - 0.5 mA Random read, current read, sequential read Vcc=5.5V, SDASCL=Vcc Standby Current I - - 2.0 A SB A0,A1,A2=GND,WP=GND (2) When the pulse width is 50ns or less, it is -1.0V. www.rohm.com TSZ02201-0R2R0G100130-1-2 2013 ROHM Co., Ltd. All rights reserved. 2/34 TSZ2211115001 03.Sep.2018 Rev.004