Datasheet Serial EEPROM Series Standard EEPROM 2 I C BUS EEPROM (2-Wire) BR24T16-W General Description 2 BR24T16-W is a serial EEPROM of I C BUS Interface Method Features Packages W(Typ) x D(Typ) x H(Max) 2 Completely conforming to the world standard I C BUS. All controls available by 2 ports of serial clock (SCL) and serial data (SDA) Other devices than EEPROM can be connected to DIP-T8 DIP8K the same port, saving microcontroller port 9.30mm x 6.50mm x 7.10mm 9.27mm x 6.35mm x 8.63mm 1.6V to 5.5V Single Power Source Operation most suitable for battery use 1.6V to 5.5V wide limit of operating voltage, possible FAST MODE 400KHz operation Page Write Mode useful for initial value write at SOP8 TSSOP-B8 factory shipment 5.00mm x 6.20mm x 1.71mm 3.00mm x 6.40mm x 1.20mm Self-timed Programming Cycle Low Current Consumption Prevention of Write Mistake WP (Write Protect) Function added Prevention of Write Mistake at Low Voltage More than 1 million write cycles SOP-J8 TSSOP-B8J More than 40 years data retention 4.90mm x 6.00mm x 1.65mm 3.00mm x 4.90mm x 1.10mm Noise filter built in SCL / SDA terminal Initial delivery state FFh SOP-J8A MSOP8 4.90mm x 6.00mm x 1.75mm 2.90mm x 4.00mm x 0.90mm VSON008X2030 SSOP-B8 2.00mm x 3.00mm x 0.60mm 3.00mm x 6.40mm x 1.35mm Figure 1. BR24T16-W Power Source Capacity Bit Format Type Package Voltage (1) BR24T16-W DIP-T8 BR24T16-WZ DIP8K BR24T16F-W SOP8 BR24T16FJ-W SOP-J8 BR24T16FJ-WSGN SOP-J8A 16Kbit 2K8 1.6V to 5.5V BR24T16FV-W SSOP-B8 BR24T16FVT-W TSSOP-B8 BR24T16FVJ-W TSSOP-B8J BR24T16FVM-W MSOP8 BR24T16NUX-W VSON008X2030 (1) Not Recommended for New Designs. Recommend BR24T16-WZ. Product structure : Silicon monolithic integrated circuit This product has no designed protection against radioactive rays w ww.rohm.com TSZ02201-0R2R0G100110-1-2 2012 ROHM Co., Ltd. All rights reserved. 1/36 TSZ22111 14 001 24.Dec.2020 Rev.008 Datasheet BR24T16-W Absolute Maximum Ratings (Ta=25C) Parameter Symbol Rating Unit Remark Supply Voltage VCC -0.3 to +6.5 V 450 (SOP8) Derate by 4.5mW/C when operating above Ta=25C 450 (SOP-J8) Derate by 4.5mW/C when operating above Ta=25C 450 (SOP-J8A) Derate by 4.5mW/C when operating above Ta=25C 300 (SSOP-B8) Derate by 3.0mW/C when operating above Ta=25C 330 (TSSOP-B8) Derate by 3.3mW/C when operating above Ta=25C Power Dissipation Pd mW 310 (TSSOP-B8J) Derate by 3.1mW/C when operating above Ta=25C 310 (MSOP8) Derate by 3.1mW/C when operating above Ta=25C 300 (VSON008X2030) Derate by 3.0mW/C when operating above Ta=25C (1) 800 (DIP-T8 ) Derate by 8.0mW/C when operating above Ta=25C Derate by 8.52mW/C when operating above Ta=25C 852 (DIP8K) When mounted (on 114.5 mm 101.5 mm 1.6 mm thick, glass epoxy on single-layer substrate). Storage Temperature Tstg -65 to +150 C Operating Temperature Topr -40 to +85 C The Max value of input voltage / output voltage is not over 6.5V. Input Voltage / When the pulse width is 50ns or less, the Min value of input voltage - -0.3 to Vcc+1.0 V Output Voltage / output voltage is not lower than -1.0V. Junction Tjmax 150 C Junction temperature at the storage condition Temperature Electrostatic discharge voltage VESD -4000 to +4000 V (human body model) (1) Not Recommended for New Designs. Recommend BR24T16-WZ. Memory Cell Characteristics (Ta=25C, Vcc=1.6V to 5.5V) Limit Parameter Unit Min Typ Max (1) Write Cycles 1,000,000 - - Times (1) Data Retention 40 - - Years (1) Not 100% TESTED Recommended Operating Ratings Parameter Symbol Rating Unit Power Source Voltage Vcc 1.6 to 5.5 V Input Voltage V 0 to Vcc IN DC Characteristics (Unless otherwise specified, Ta=-40C to +85C, Vcc=1.6V to 5.5V) Limit Parameter Symbol Unit Conditions Min Typ Max Input High Voltage1 VIH1 0.7Vcc - Vcc+1.0 V 1.7VVcc5.5V (2) Input Low Voltage1 V -0.3 - +0.3Vcc V 1.7VVcc5.5V IL1 Input High Voltage2 V 0.8Vcc - Vcc+1.0 V 1.6VVcc<1.7V IH2 (2) Input Low Voltage2 VIL2 -0.3 - +0.2Vcc V 1.6VVcc<1.7V Output Low Voltage1 V - - 0.4 V I =3.0mA, 2.5VVcc5.5V (SDA) OL1 OL Output Low Voltage2 VOL2 - - 0.2 V IOL=0.7mA, 1.6VVcc<2.5V (SDA) Input Leakage Current I -1 - 1 A V =0 to Vcc LI IN Output Leakage Current ILO -1 - 1 A VOUT=0 to Vcc (SDA) Vcc=5.5V, fSCL=400kHz, tWR=5ms, Supply Current (Write) ICC1 - - 2.0 mA Byte write, Page write Vcc=5.5V, f =400kHz SCL Supply Current (Read) I - - 0.5 mA CC2 Random read, current read, sequential read Vcc=5.5V, SDA,SCL=Vcc Standby Current I - - 2.0 A SB A0,A1,A2=GND,WP=GND (2) When the pulse width is 50ns or less, it is -1.0V. www.rohm.com TSZ02201-0R2R0G100110-1-2 2012 ROHM Co., Ltd. All rights reserved. 2/36 TSZ22111 15 001 24.Dec.2020 Rev.008