Datasheet Serial EEPROM Series Standard EEPROM 2 I C BUS EEPROM (2-Wire) BR24T1M-3AM General Description 2 BR24T1M-3AM is a serial EEPROM of I C BUS Interface Method Features Packages W(Typ) x D(Typ)x H(Max) All controls available by 2 ports of serial clock(SCL) and serial data(SDA) Other devices than EEPROM can be connected to the same port, saving microcontroller port 1.7V to 5.5V Single Power Source Operation most SOP-J8 SOP8 suitable for battery use 4.90mm x 6.00mm x 1.65mm 5.00mm x 6.20mm x 1.71mm 1.7V to 5.5V wide limit of operating voltage, possible 1MHz operation Page Write Mode useful for initial value write at factory Figure 1. shipment Self-timed Programming Cycle Low Current Consumption Prevention of Write Mistake WP (Write Protect) Function added Prevention of Write Mistake at Low Voltage More than 1 million write cycles More than 40 years data retention Noise filter built in SCL / SDA terminal Initial delivery state FFh AEC-Q100 Grade3 Qualified Page Write Page Size 256 Bytes Product Number BR24T1M-3AM BR24T1M-3AM Power Source Capacity Bit Format Type Package Voltage BR24T1MFJ-3AM SOP-J8 1Mbit 128K8 1.7V to 5.5V BR24T1MF-3AM SOP8 Product structureSilicon monolithic integrated circuit This product has no designed protection against radioactive rays . www.rohm.com TSZ02201-0GFG0G100430-1-2 2016 ROHM Co., Ltd. All rights reserved. 1/28 08.Jul.2016 Rev.001 TSZ2211114001 DatasheetDatasheet BR24T1M-3AM Absolute Maximum Ratings (Ta=25C) Parameter Symbol Rating Unit Remark Supply Voltage Vcc -0.3 to +6.5 V Storage Temperature Tstg -65 to +150 C Operating Temperature Topr -40 to +85 C The Max value of Input Voltage/Output Voltage is not over 6.5V. Input Voltage / When the pulse width is 50ns or less, the Min value Input -0.3 to Vcc+1.0 V Output Voltage Voltage/Output Voltage is not lower than -1.0V. Junction Tjmax 150 C Junction temperature at the storage condition Temperature Electrostatic Discharge Voltage V -4000 to +4000 V ESD (Human Body Model) Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over the absolute maximum ratings. (Note1) Thermal Resistance Thermal Resistance (Typ) Parameter Symbol Unit (Note3) (Note4) 1s 2s2p SOP-J8 Junction to Ambient 149.3 76.9 C/W JA (Note2) Junction to Top Characterization Parameter 18 11 C/W JT SOP8 Junction to Ambient 197.4 109.8 C/W JA (Note2) Junction to Top Characterization Parameter 21 19 C/W JT (Note1)Based on JESD51-2A(Still-Air) (Note2)The thermal characterization parameter to report the difference between junction temperature and the temperature at the top center of the outside surface of the component package. (Note3)Using a PCB board based on JESD51-3. Layer Number of Material Board Size Measurement Board Single FR-4 114.3mm x 76.2mm x 1.57mmt Top Copper Pattern Thickness Footprints and Traces 70m (Note4)Using a PCB board based on JESD51-7. Layer Number of Material Board Size Measurement Board 4 Layers FR-4 114.3mm x 76.2mm x 1.6mmt Top 2 Internal Layers Bottom Copper Pattern Thickness Copper Pattern Thickness Copper Pattern Thickness Footprints and Traces 70m 74.2mm x 74.2mm 35 m 74.2mm x 74.2mm 70 m Memory Cell Characteristics (Ta=25C, Vcc=1.7V to 5.5V) Limit Parameter Unit Min Typ Max (Note5) Write Cycles 1,000,000 - - Times (Note5) Data Retention 40 - - Years (Note5) Not 100% TESTED Recommended Operating Ratings Rating Parameter Symbol Unit Min Max Power Source Voltage Vcc 1.7 5.5 V Input Voltage V 0 Vcc IN Bypass Capacitor C 0.1 - F www.rohm.com. TSZ02201-0GFG0G100430-1-2 2016 ROHM Co., Ltd. All rights reserved. 2/28 08.Jul.2016 Rev.001 TSZ2211115001