Datasheet Serial EEPROM Series Automotive EEPROM 105 Operation SPI BUS EEPROM BR25A256-3M General Description BR25A256-3M is a 256Kbit serial EEPROM of SPI BUS interface. Features Packages W(Typ) x D(Typ) x H(Max) High Speed Clock Action up to 10MHz (Max) Wait Function by HOLDB Terminal Part or Whole of Memory Arrays Settable as Read only Memory Area by Program 2.5V to 5.5V Single Power Source Operation Most Suitable for Battery Use SOP- J8 Up to 64Byte in Page Write Mode. 4.90mm x 6.00mm x 1.65mm For SPI bus interface (CPOL, CPHA) = (0, 0), (1, 1) Self-timed Programming Cycle Low Current Consumption At Write Action (5V) : 0.7mA (Typ) At Read Action (5V) : 2.4mA (Typ) At Standby Action (5V) : 0.1A (Typ) Address Auto Increment Function at Read Action TSSOP-B8 Prevention of Write Mistake 3.00mm x 6.40mm x 1.20mm Write Prohibition at Power On Write Prohibition by Command Code (WRDI) Write Prohibition by WPB Pin Figure 1. Write Prohibition Block Setting by Status Registers (BP1, BP0) Prevention of Write Mistake at Low Voltage More than 100 years Data Retention. More than 1 Million Write Cycles. Bit Format 32K8 Initial Delivery Data Memory Array: FFh Status Register: WPEN, BP1, BP0 : 0 Product structureSilicon monolithic integrated circuit This product is not designed protection against radioactive rays www.rohm.com TSZ02201-0R1R0G100390-1-2 2014 ROHM Co., Ltd. All rights reserved. 1/28 TSZ2211114001 22.Dec.2014 Rev.003 Datasheet BR25A256-3M Absolute Maximum Ratings (Ta=25C) Parameter Symbol Ratings Unit Remarks Supply Voltage V -0.3 to +6.5 V CC When using at Ta=25C or higher 4.5mW to be reduced per 1C. 0.45(SOP8) Power Dissipation Pd 0.45 (SOP-J8) W When using at Ta=25C or higher 4.5mW to be reduced per 1C. When using at Ta=25C or higher 3.3mW to be reduced per 1C. 0.33 (TSSOP-B8) Storage Temperature Tstg - 65 to +150 C Operating Temperature Topr - 40 to +105 C The Max value of Input Voltage/Output Voltage is not over 6.5V. Input Voltage / When the pulse width is 50ns or less, the Min value of Input - 0.3 to Vcc+1.0 V Output Voltage Voltage/Output Voltage is not under -1.0V. Junction temperature Tjmax 150 C Junction temperature at the storage condition Electrostatic discharge voltage V -4000 to +4000 V ESD (human body model) Caution: Operating the IC over the absolute Maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over the absolute Maximum ratings. Memory Cell Characteristics (Vcc=2.5V to 5.5V) Limits Parameter Unit Condition Min Typ Max 1,000,000 - - Times Ta25C (Note1) Write Cycles 150,000 - - Times Ta105C 100 - - Years Ta25C (Note1) Data Retention 20 - - Years Ta105C (Note1) Not 100% TESTED Recommended Operating Ratings Ratings Parameter Symbol Unit Min Max Power Source Voltage Vcc 2.5 5.5 V Input Voltage VIN 0 VCC Bypass capacitor C 0.1 - F Input / Output Capacity (Ta=25C, frequency=5MHz) Parameter Symbol Min Max Unit Conditions (Note1) Input Capacity C 8 V =GND IN IN pF (Note1) Output Capacity C 8 V =GND OUT OUT (Note1) Not 100% TESTED. DC Characteristics (Unless otherwise specified, Ta=-40C to +105C, Vcc=2.5V to 5.5V) Limits Parameter Symbol Unit Conditions Min Typ Max Input High Voltage VIH 0.7xVcc Vcc+1.0 V (Note1) Input Low Voltage VIL -0.3 0.3xVcc V Output Low Voltage VOL 0 0.4 V IOL=3.0mA Output High Voltage VOH Vcc-0.2 Vcc V IOH=-2.0mA Input Leakage Current ILI - 1 1 A VIN=0 to Vcc Output Leakage Current ILO - 1 1 A VOUT=0 to Vcc, CSB=Vcc Vcc=5.5V, f =10MHz, t =5ms SCK E/W Supply Current (Write) I 3 mA CC1 Byte Write, Page Write, Write Status register Vcc=5.5V, f =10MHz, SO=OPEN SCK Supply Current (Read) ICC2 4 mA Read, Read Status Register Vcc=5.5V, SO=OPEN Standby Current ISB 10 A CSB=HOLDB=WPB=Vcc, SCK=SI=Vcc or GND (Note1) When the pulse width is 50ns or less, it is -1.0V. www.rohm.com TSZ02201-0R1R0G100390-1-2 2014 ROHM Co., Ltd. All rights reserved. 2/28 TSZ2211115001 22.Dec.2014 Rev.003