X-On Electronics has gained recognition as a prominent supplier of BR24T512FJ-3AME2 EEPROM across the USA, India, Europe, Australia, and various other global locations. BR24T512FJ-3AME2 EEPROM are a product manufactured by ROHM. We provide cost-effective solutions for EEPROM, ensuring timely deliveries around the world.

BR24T512FJ-3AME2 ROHM

BR24T512FJ-3AME2 electronic component of ROHM
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Part No.BR24T512FJ-3AME2
Manufacturer: ROHM
Category: EEPROM
Description: EEPROM Memory IC 512Kb (64K x 8) I²C 1 MHz 8-SOP-J
Datasheet: BR24T512FJ-3AME2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.8745 ea
Line Total: USD 1.87 
Availability - 344
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
344
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 1.8745
10 : USD 1.6215
100 : USD 1.5065
500 : USD 1.4605
1000 : USD 1.426
2500 : USD 1.3685
5000 : USD 1.2995

   
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We are delighted to provide the BR24T512FJ-3AME2 from our EEPROM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BR24T512FJ-3AME2 and other electronic components in the EEPROM category and beyond.

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Datasheet Serial EEPROM Series Standard EEPROM 2 I C BUS EEPROM (2-Wire) BR24T512-3AM General Description 2 BR24T512-3AM is a serial EEPROM of I C BUS Interface Method Features Packages W(Typ) x D(Typ)x H(Max) All controls available by 2 ports of serial clock (SCL) and serial data (SDA) Other devices than EEPROM can be connected to the same port, saving microcontroller port 1.7V to 5.5V single power source operation most suitable for battery use SOP-J8 TSSOP-B8 1.7V to 5.5V wide limit of operating voltage, possible 4.90mm x 6.00mm x 1.65mm 3.00mm x 6.40mm x 1.20mm 1MHz operation Page Write Mode useful for initial value write at factory shipment Self-timed Programming Cycle Low Current Consumption SOP8 Prevention of Write Mistake 5.00mm x 6.20mm x 1.71mm WP (Write Protect) Function added Prevention of Write Mistake at Low Voltage More than 1 million write cycles Figure.1 More than 40 years data retention Noise filter built in SCL / SDA terminal Initial delivery state FFh AEC-Q100 Grade3 Qualified Page Write Page Size 128 Bytes Product number BR24T512-3AM BR24T512-3AM Bit Power Supply Capacity Type Package Format Voltage BR24T512FVT-3AM TSSOP-B8 512Kbit 64Kx8 BR24T512FJ-3AM SOP-J8 1.7V to 5.5V BR24T512F-3AM SOP8 Product structureSilicon monolithic integrated circuit This product has no designed protection against radioactive rays . www.rohm.com TSZ02201-0GFG0G100420-1-2 2016 ROHM Co., Ltd. All rights reserved. 1/29 15.Jul.2016 Rev.001 TSZ2211114001 DatasheetDatasheet BR24T512-3AM Absolute Maximum Ratings (Ta=25C) Parameter Symbol Rating Unit Remark Supply Voltage Vcc -0.3 to +6.5 V Storage Temperature Tstg -65 to +150 C Operating Temperature Topr -40 to +85 C The Max value of Input voltage/Output voltage is not over 6.5V. Input Voltage / When the pulse width is 50ns or less, the Min value of Input -0.3 to Vcc+1.0 V Output Voltage voltage/Output voltage is not lower than -1.0V. Junction Tjmax 150 C Junction temperature at the storage condition Temperature Electrostatic Discharge Voltage V -4000 to +4000 V ESD (Human Body Model) Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over the absolute maximum ratings. (Note1) Thermal Resistance Thermal Resistance (Typ) Parameter Symbol Unit (Note3) (Note4) 1s 2s2p TSSOP-B8 Junction to Ambient 251.9 152.1 C/W JA (Note2) Junction to Top Characterization Parameter 31 20 C/W JT SOP-J8 Junction to Ambient 149.3 76.9 C/W JA (Note2) Junction to Top Characterization Parameter 18 11 C/W JT SOP8 Junction to Ambient 197.4 109.8 C/W JA (Note2) Junction to Top Characterization Parameter 21 19 C/W JT (Note1)Based on JESD51-2A(Still-Air) (Note2)The thermal characterization parameter to report the difference between junction temperature and the temperature at the top center of the outside surface of the component package. (Note3)Using a PCB board based on JESD51-3. Layer Number of Material Board Size Measurement Board Single FR-4 114.3mm x 76.2mm x 1.57mmt Top Copper Pattern Thickness Footprints and Traces 70m (Note4)Using a PCB board based on JESD51-7. Layer Number of Material Board Size Measurement Board 4 Layers FR-4 114.3mm x 76.2mm x 1.6mmt Top 2 Internal Layers Bottom Copper Pattern Thickness Copper Pattern Thickness Copper Pattern Thickness Footprints and Traces 70m 74.2mm x 74.2mm 35 m 74.2mm x 74.2mm 70 m Memory Cell Characteristics (Ta=25C, V =1.7V to 5.5V) CC Limit Parameter Unit Min Typ Max (Note1) 1,000,000 - - Times Write Cycles (Note1) Data Retention 40 - - Years (Note1) Not 100% TESTED Recommended Operating Ratings Rating Parameter Symbol Unit Min Max Power Source Voltage Vcc 1.7 5.5 V Input Voltage V 0 Vcc IN Bypass Capacitor C 0.1 - F www.rohm.com TSZ02201-0GFG0G100420-1-2 2016 ROHM Co., Ltd. All rights reserved. 2/29 15.Jul.2016 Rev.001 TSZ2211115001

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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