X-On Electronics has gained recognition as a prominent supplier of BR24T16FJ-WE2 EEPROM across the USA, India, Europe, Australia, and various other global locations. BR24T16FJ-WE2 EEPROM are a product manufactured by ROHM. We provide cost-effective solutions for EEPROM, ensuring timely deliveries around the world.

BR24T16FJ-WE2 ROHM

BR24T16FJ-WE2 electronic component of ROHM
BR24T16FJ-WE2 ROHM
BR24T16FJ-WE2 EEPROM
BR24T16FJ-WE2  Semiconductors

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See Product Specifications
Part No. BR24T16FJ-WE2
Manufacturer: ROHM
Category: EEPROM
Description: EEPROM Hi-Rel Serial EEPROM of I2C BUS
Datasheet: BR24T16FJ-WE2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.259 ea
Line Total: USD 1.3 
Availability - 1847
Ship by Tue. 13 May to Fri. 16 May
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
1847
Ship by Tue. 13 May to Fri. 16 May
MOQ : 5
Multiples : 5
5 : USD 0.259
50 : USD 0.2286
150 : USD 0.1618
500 : USD 0.1347
2500 : USD 0.1299
5000 : USD 0.1269

1056
Ship by Fri. 02 May to Tue. 06 May
MOQ : 1
Multiples : 1
1 : USD 0.4042
10 : USD 0.3728
100 : USD 0.3309
500 : USD 0.3096
1000 : USD 0.3026
2500 : USD 0.2945
5000 : USD 0.2841
10000 : USD 0.2749
25000 : USD 0.2749

   
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We are delighted to provide the BR24T16FJ-WE2 from our EEPROM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BR24T16FJ-WE2 and other electronic components in the EEPROM category and beyond.

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Datasheet Serial EEPROM Series Standard EEPROM 2 I C BUS EEPROM (2-Wire) BR24T16-W General Description 2 BR24T16-W is a serial EEPROM of I C BUS Interface Method Features Packages W(Typ) x D(Typ) x H(Max) 2 Completely conforming to the world standard I C BUS. All controls available by 2 ports of serial clock (SCL) and serial data (SDA) Other devices than EEPROM can be connected to DIP-T8 DIP8K the same port, saving microcontroller port 9.30mm x 6.50mm x 7.10mm 9.27mm x 6.35mm x 8.63mm 1.6V to 5.5V Single Power Source Operation most suitable for battery use 1.6V to 5.5V wide limit of operating voltage, possible FAST MODE 400KHz operation Page Write Mode useful for initial value write at SOP8 TSSOP-B8 factory shipment 5.00mm x 6.20mm x 1.71mm 3.00mm x 6.40mm x 1.20mm Self-timed Programming Cycle Low Current Consumption Prevention of Write Mistake WP (Write Protect) Function added Prevention of Write Mistake at Low Voltage More than 1 million write cycles TSSOP-B8J SOP-J8 More than 40 years data retention 4.90mm x 6.00mm x 1.65mm 3.00mm x 4.90mm x 1.10mm Noise filter built in SCL / SDA terminal Initial delivery state FFh SOP-J8A MSOP8 4.90mm x 6.00mm x 1.75mm 2.90mm x 4.00mm x 0.90mm VSON008X2030 SSOP-B8 2.00mm x 3.00mm x 0.60mm 3.00mm x 6.40mm x 1.35mm Figure 1. BR24T16-W Power Source Capacity Bit Format Type Package Voltage (1) BR24T16-W DIP-T8 BR24T16-WZ DIP8K BR24T16F-W SOP8 BR24T16FJ-W SOP-J8 BR24T16FJ-WSGN SOP-J8A 16Kbit 2K8 1.6V to 5.5V BR24T16FV-W SSOP-B8 BR24T16FVT-W TSSOP-B8 BR24T16FVJ-W TSSOP-B8J BR24T16FVM-W MSOP8 BR24T16NUX-W VSON008X2030 (1) Not Recommended for New Designs. Recommend BR24T16-WZ. Product structure : Silicon monolithic integrated circuit This product has no designed protection against radioactive rays w ww.rohm.com TSZ02201-0R2R0G100110-1-2 2012 ROHM Co., Ltd. All rights reserved. 1/36 TSZ22111 14 001 20.Dec.2018 Rev.007 Datasheet BR24T16-W Absolute Maximum Ratings (Ta=25C) Parameter Symbol Rating Unit Remark Supply Voltage VCC -0.3 to +6.5 V 450 (SOP8) Derate by 4.5mW/C when operating above Ta=25C 450 (SOP-J8) Derate by 4.5mW/C when operating above Ta=25C 450 (SOP-J8A) Derate by 4.5mW/C when operating above Ta=25C 300 (SSOP-B8) Derate by 3.0mW/C when operating above Ta=25C 330 (TSSOP-B8) Derate by 3.3mW/C when operating above Ta=25C Power Dissipation Pd mW 310 (TSSOP-B8J) Derate by 3.1mW/C when operating above Ta=25C 310 (MSOP8) Derate by 3.1mW/C when operating above Ta=25C 300 (VSON008X2030) Derate by 3.0mW/C when operating above Ta=25C (1) 800 (DIP-T8 ) Derate by 8.0mW/C when operating above Ta=25C Derate by 8.52mW/C when operating above Ta=25C 852 (DIP8K) When mounted (on 114.5 mm 101.5 mm 1.6 mm thick, glass epoxy on single-layer substrate). Storage Temperature Tstg -65 to +150 C Operating Temperature Topr -40 to +85 C The Max value of input voltage / output voltage is not over 6.5V. Input Voltage / - -0.3 to Vcc+1.0 V When the pulse width is 50ns or less, the Min value of input voltage Output Voltage / output voltage is not lower than -1.0V. Junction Tjmax 150 C Junction temperature at the storage condition Temperature Electrostatic discharge voltage V -4000 to +4000 V ESD (human body model) (1) Not Recommended for New Designs. Recommend BR24T16-WZ. Memory Cell Characteristics (Ta=25C, Vcc=1.6V to 5.5V) Limit Parameter Unit Min Typ Max (1) Write Cycles 1,000,000 - - Times (1) Data Retention 40 - - Years (1) Not 100% TESTED Recommended Operating Ratings Parameter Symbol Rating Unit Power Source Voltage Vcc 1.6 to 5.5 V Input Voltage V 0 to Vcc IN DC Characteristics (Unless otherwise specified, Ta=-40C to +85C, Vcc=1.6V to 5.5V) Limit Parameter Symbol Unit Conditions Min Typ Max Input High Voltage1 V 0.7Vcc - Vcc+1.0 V 1.7VVcc5.5V IH1 (2) Input Low Voltage1 V -0.3 - +0.3Vcc V 1.7VVcc5.5V IL1 Input High Voltage2 V 0.8Vcc - Vcc+1.0 V 1.6VVcc<1.7V IH2 (2) Input Low Voltage2 V -0.3 - +0.2Vcc V 1.6VVcc<1.7V IL2 Output Low Voltage1 V - - 0.4 V I =3.0mA, 2.5VVcc5.5V (SDA) OL1 OL Output Low Voltage2 V - - 0.2 V I =0.7mA, 1.6VVcc<2.5V (SDA) OL2 OL Input Leakage Current I -1 - 1 A V =0 to Vcc LI IN Output Leakage Current I -1 - 1 A V =0 to Vcc (SDA) LO OUT Vcc=5.5V, f =400kHz, t =5ms, SCL WR Supply Current (Write) I - - 2.0 mA CC1 Byte write, Page write Vcc=5.5V, f =400kHz SCL Supply Current (Read) I - - 0.5 mA CC2 Random read, current read, sequential read Vcc=5.5V, SDA,SCL=Vcc Standby Current I - - 2.0 A SB A0,A1,A2=GND,WP=GND (2) When the pulse width is 50ns or less, it is -1.0V. www.rohm.com TSZ02201-0R2R0G100110-1-2 2012 ROHM Co., Ltd. All rights reserved. 2/36 TSZ22111 15 001 20.Dec.2018 Rev.007

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
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