BR34E02FVT-WE2 ROHM

Memory for Plug & Play DDR/DDR2 (For memory module) SPD Memory No.09002EBT03 BR34E02FVT-W,BR34E02NUX-W Description BR34E02FVT-W is 2568 bit Electrically Erasable PROM (Based on Serial Presence Detect) Features 1) 2568 bit architecture serial EEPROM 2) Wide operating voltage range: 1.7V-3.6V 3) Two-wire serial interface 4) High reliability connection using Au pads and Au wires 5) Self-Timed Erase and Write Cycle 6) Page Write Function (16byte) 7) Write Protect Mode Settable Reversible Write Protect Function: 00h-7Fh Write Protect 1 (Onetime Rom) : 00h-7Fh Write Protect 2 (Hardwire WP PIN) : 00h-FFh 8) Low Power consumption Write (at 1.7V ) : 0.4mA (typ.) Read (at 1.7V ) : 0.1mA(typ.) Standby ( at 1.7V ) : 0.1A(typ.) 9) DATA security Write protect feature (WP pin) Inhibit to WRITE at low VCC 10) Compact package: TSSOP-B8, VSON008X2030 11) High reliability fine pattern CMOS technology 12) Rewriting possible up to 1,000,000 times 13) Data retention: 40 years 14) Noise reduction Filtered inputs in SCL / SDA 15) Initial data FFh at all addresses BR34E02-W Series Capacity Bit format Type Power Source Voltage TSSOP-B8 VSON008X2030 2Kbit 256X8 BR34E02-W 1.7V3.6V Absolute Maximum Ratings (Ta=25) Parameter Symbol Rating Unit Supply Voltage VCC -0.3+6.5 V *1 330(BR34E02FVT-W) Power Dissipation Pd mW *2 300(BR34E02NUX-W) Storage Temperature Tstg -65+125 Operating Temperature Topr -40+85 Terminal Voltage (A0) - -0.310.0 V Terminal Voltage (etcetera) - -0.3VCC+0.3 V * Reduce by 3.3mW(*1), 3.0 mW(*2)/C over 25C Recommended operating conditions Parameter Symbol Rating Unit Supply Voltage VCC 1.73.6 V Input Voltage IN 0VCC V www.rohm.com 2009.09 - Rev.B 1/18 2009 ROHM Co., Ltd. All rights reserved. Technical Note BR34E02FVT-W, BR34E02NUX-W Memory cell characteristics(Ta=25, VCC=1.7V3.6V) Specification Parameter Unit Min. Typ. Max. *1 Write / Erase Cycle 1,000,000 - - Cycles *1 Data Retention 40 - - Years *1:Not 100% TESTED Electrical characteristics - DC(Unless otherwise specified Ta=-40+85, VCC=1.7V3.6V) Specification Parameter Symbol Unit Test Condition Min. Typ. Max. Input Voltage VIH1 0.7 VCC - Vcc+0.3 V Input Voltage VIL1 - - 0.3 VCC V Output Voltage 1 VOL1 -0.3 - 0.4 V IOL=2.1mA2.5VVCC3.6V(SDA) Output Voltage 2 VOL2 - - 0.2 V IOL=0.7mA1.7VVCC2.5V(SDA) Input Leakage Current 1 ILI1 -1 - 1 A VIN=0VVCC(A0,A1,A2,SCL) Input Leakage Current 2 ILI2 -1 - 15 A VIN=0VVCC(WP) Input Leakage Current 3 ILI3 -1 - 20 A VIN=VHV(A0) Output Leakage Current ILO -1 - 1 A VOUT=0VVCC VCC=1.7V,fSCL=100kHztWR=5ms Byte Write ICC1 - - 1.0 mA Page Write Write Protect VCC =3.6V,fSCL=100kHz, tWR=5ms Byte Write Operating Current ICC2 - - 3.0 mA Page Write Write Protect VCC =3.6V,fSCL=100kHz Random Read ICC3 - - 0.5 mA Current Read Sequential Read VCC =3.6V,SDA,SCL= VCC Standby Current ISB - - 2.0 A A0,A1,A2=GND,WP=GND A0 HV Voltage VHV 7 - 10 V VHV-Vcc4.8V Note: This IC is not designed to be radiation-resistant. lectrical characteristics - AC(Unless otherwise specified Ta=-40+85, VCC =1.7V3.6V) FAST-MODE STANDARD-MODE 2.5VVCC5.5V 1.7VVCC5.5V Parameter Symbol Unit Min. Typ. Max. Min. Typ. Max. Clock Frequency fSCL - - 400 - - 100 kHz Data Clock High Period tHIGH 0.6 - - 4.0 - - s Data Clock Low Period tLOW 1.2 - - 4.7 - - s *1 SDA and SCL Rise Time tR - - 0.3 - - 1.0 s *1 SDA and SCL Fall Time tF - - 0.3 - - 0.3 s Start Condition Hold Time tHD:STA 0.6 - - 4.0 - - s Start Condition Setup Time tSU:STA 0.6 - - 4.7 - - s Input Data Hold Time tHD:DAT 0 - - 0 - - ns Input Data Setup Time tSU:DAT 100 - - 250 - - ns Output Data Delay Time tPD 0.1 - 0.9 0.1 - 3.5 s Output Data Hold Time tDH 0.1 - - 0.1 - - s Stop Condition Setup Time tSU:STO 0.6 - - 4.0 - - s Bus Free Time tBUF 1.2 - - 4.7 - - s Write Cycle Time tWR - - 5 - - 5 ms Noise Spike Width (SDA tI - - 0.1 - - 0.1 s and SCL) WP Hold Time tHDWP 0 - - 0 - - ns WP Setup Time tSUWP 0.1 - - 0.1 - - s WP High Period tHIGHWP 1.0 - - 1.0 - - s *1Not 100 TESTED www.rohm.com 2009.09 - Rev.B 2/18 2009 ROHM Co., Ltd. All rights reserved.