X-On Electronics has gained recognition as a prominent supplier of BR34E02FVT-WE2 EEPROM across the USA, India, Europe, Australia, and various other global locations. BR34E02FVT-WE2 EEPROM are a product manufactured by ROHM. We provide cost-effective solutions for EEPROM, ensuring timely deliveries around the world.

BR34E02FVT-WE2 ROHM

BR34E02FVT-WE2 electronic component of ROHM
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Part No.BR34E02FVT-WE2
Manufacturer: ROHM
Category: EEPROM
Description: EEPROM Serial-2Wire 2K-bit 256 x 8 1.8V/2.5V/3.3V 8-Pin TSSOP-B T/R
Datasheet: BR34E02FVT-WE2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
89: USD 0.4567 ea
Line Total: USD 40.65 
Availability - 2910
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ: 89  Multiples: 1
Pack Size: 1
Availability Price Quantity
2910
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 89
Multiples : 1
89 : USD 0.4567
100 : USD 0.442
200 : USD 0.4355
500 : USD 0.429
1000 : USD 0.4209
3000 : USD 0.4112

   
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We are delighted to provide the BR34E02FVT-WE2 from our EEPROM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BR34E02FVT-WE2 and other electronic components in the EEPROM category and beyond.

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Memory for Plug & Play DDR/DDR2 (For memory module) SPD Memory No.09002EBT03 BR34E02FVT-W,BR34E02NUX-W Description BR34E02FVT-W is 2568 bit Electrically Erasable PROM (Based on Serial Presence Detect) Features 1) 2568 bit architecture serial EEPROM 2) Wide operating voltage range: 1.7V-3.6V 3) Two-wire serial interface 4) High reliability connection using Au pads and Au wires 5) Self-Timed Erase and Write Cycle 6) Page Write Function (16byte) 7) Write Protect Mode Settable Reversible Write Protect Function: 00h-7Fh Write Protect 1 (Onetime Rom) : 00h-7Fh Write Protect 2 (Hardwire WP PIN) : 00h-FFh 8) Low Power consumption Write (at 1.7V ) : 0.4mA (typ.) Read (at 1.7V ) : 0.1mA(typ.) Standby ( at 1.7V ) : 0.1A(typ.) 9) DATA security Write protect feature (WP pin) Inhibit to WRITE at low VCC 10) Compact package: TSSOP-B8, VSON008X2030 11) High reliability fine pattern CMOS technology 12) Rewriting possible up to 1,000,000 times 13) Data retention: 40 years 14) Noise reduction Filtered inputs in SCL / SDA 15) Initial data FFh at all addresses BR34E02-W Series Capacity Bit format Type Power Source Voltage TSSOP-B8 VSON008X2030 2Kbit 256X8 BR34E02-W 1.7V3.6V Absolute Maximum Ratings (Ta=25) Parameter Symbol Rating Unit Supply Voltage VCC -0.3+6.5 V *1 330(BR34E02FVT-W) Power Dissipation Pd mW *2 300(BR34E02NUX-W) Storage Temperature Tstg -65+125 Operating Temperature Topr -40+85 Terminal Voltage (A0) - -0.310.0 V Terminal Voltage (etcetera) - -0.3VCC+0.3 V * Reduce by 3.3mW(*1), 3.0 mW(*2)/C over 25C Recommended operating conditions Parameter Symbol Rating Unit Supply Voltage VCC 1.73.6 V Input Voltage IN 0VCC V www.rohm.com 2009.09 - Rev.B 1/18 2009 ROHM Co., Ltd. All rights reserved. Technical Note BR34E02FVT-W, BR34E02NUX-W Memory cell characteristics(Ta=25, VCC=1.7V3.6V) Specification Parameter Unit Min. Typ. Max. *1 Write / Erase Cycle 1,000,000 - - Cycles *1 Data Retention 40 - - Years *1:Not 100% TESTED Electrical characteristics - DC(Unless otherwise specified Ta=-40+85, VCC=1.7V3.6V) Specification Parameter Symbol Unit Test Condition Min. Typ. Max. Input Voltage VIH1 0.7 VCC - Vcc+0.3 V Input Voltage VIL1 - - 0.3 VCC V Output Voltage 1 VOL1 -0.3 - 0.4 V IOL=2.1mA2.5VVCC3.6V(SDA) Output Voltage 2 VOL2 - - 0.2 V IOL=0.7mA1.7VVCC2.5V(SDA) Input Leakage Current 1 ILI1 -1 - 1 A VIN=0VVCC(A0,A1,A2,SCL) Input Leakage Current 2 ILI2 -1 - 15 A VIN=0VVCC(WP) Input Leakage Current 3 ILI3 -1 - 20 A VIN=VHV(A0) Output Leakage Current ILO -1 - 1 A VOUT=0VVCC VCC=1.7V,fSCL=100kHztWR=5ms Byte Write ICC1 - - 1.0 mA Page Write Write Protect VCC =3.6V,fSCL=100kHz, tWR=5ms Byte Write Operating Current ICC2 - - 3.0 mA Page Write Write Protect VCC =3.6V,fSCL=100kHz Random Read ICC3 - - 0.5 mA Current Read Sequential Read VCC =3.6V,SDA,SCL= VCC Standby Current ISB - - 2.0 A A0,A1,A2=GND,WP=GND A0 HV Voltage VHV 7 - 10 V VHV-Vcc4.8V Note: This IC is not designed to be radiation-resistant. lectrical characteristics - AC(Unless otherwise specified Ta=-40+85, VCC =1.7V3.6V) FAST-MODE STANDARD-MODE 2.5VVCC5.5V 1.7VVCC5.5V Parameter Symbol Unit Min. Typ. Max. Min. Typ. Max. Clock Frequency fSCL - - 400 - - 100 kHz Data Clock High Period tHIGH 0.6 - - 4.0 - - s Data Clock Low Period tLOW 1.2 - - 4.7 - - s *1 SDA and SCL Rise Time tR - - 0.3 - - 1.0 s *1 SDA and SCL Fall Time tF - - 0.3 - - 0.3 s Start Condition Hold Time tHD:STA 0.6 - - 4.0 - - s Start Condition Setup Time tSU:STA 0.6 - - 4.7 - - s Input Data Hold Time tHD:DAT 0 - - 0 - - ns Input Data Setup Time tSU:DAT 100 - - 250 - - ns Output Data Delay Time tPD 0.1 - 0.9 0.1 - 3.5 s Output Data Hold Time tDH 0.1 - - 0.1 - - s Stop Condition Setup Time tSU:STO 0.6 - - 4.0 - - s Bus Free Time tBUF 1.2 - - 4.7 - - s Write Cycle Time tWR - - 5 - - 5 ms Noise Spike Width (SDA tI - - 0.1 - - 0.1 s and SCL) WP Hold Time tHDWP 0 - - 0 - - ns WP Setup Time tSUWP 0.1 - - 0.1 - - s WP High Period tHIGHWP 1.0 - - 1.0 - - s *1Not 100 TESTED www.rohm.com 2009.09 - Rev.B 2/18 2009 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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