DTA124EEBTL ROHM

DTA124E series PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor) Datasheet llOutline Parameter Value SOT-723 SOT-416FL V -50V CC I -100mA C(MAX.) R 22k 1 DTA124EM DTA124EEB R 22k (VMT3) (EMT3F) 2 SOT-416 SOT-323FL llFeatures 1) Built-In Biasing Resistors, R = R = 22k 1 2 2) Built-in bias resistors enable the configuration of DTA124EE DTA124EUB an inverter circuit without connecting external (EMT3) (UMT3F) input resistors (see inner circuit) . SOT-323 SOT-346 3) Only the on/off conditions need to be set for operation, making the circuit design easy. 4) Complementary NPN Types: DTC124E series llApplication INVERTER, INTERFACE, DRIVER DTA124EUA DTA124EKA (UMT3) (SMT3) llInner circuit DTA124EM/ DTA124EEB/ DTA124EUB DTA124EE/ DTA124EUA/ DTA124EKA llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) DTA124EM SOT-723 1212 T2L 180 8 8000 15 DTA124EEB SOT-416FL 1616 TL 180 8 3000 15 DTA124EE SOT-416 1616 TL 180 8 3000 15 DTA124EUB SOT-323FL 2021 TL 180 8 3000 15 DTA124EUA SOT-323 2021 T106 180 8 3000 15 DTA124EKA SOT-346 2928 T146 180 8 3000 15 www.rohm.com 1/10 20150929 - Rev.002 2015 ROHM Co., Ltd. All rights reserved. DTA124E series Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit Supply voltage V -50 V CC V Input voltage -40 to 10 V IN I Output current -30 mA O *1 I Collector current -100 mA C(MAX) DTA124EM 150 DTA124EEB 150 DTA124EE 150 *2 Power dissipation P mW D DTA124EUB 200 DTA124EUA 200 DTA124EKA 200 T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = -5V, I = -100A - - -0.5 I(off) CC O Input voltage V V V = -0.2V, I = -5mA -3.0 - - I(on) O O V I = -10mA, I = -0.5mA Output voltage - -100 -300 mV O(on) O I I Input current V = -5V - - -360 A I I I V = -50V, V = 0V Output current - - -500 nA O(off) CC I G DC current gain V = -5V, I = -5mA 56 - - - I O O R Input resistance - 15.4 22 28.6 k 1 R /R Resistance ratio - 0.8 1.0 1.2 - 2 1 V = -10V, I = 5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference land. www.rohm.com 2/10 2015 ROHM Co., Ltd. All rights reserved. 20150929 - Rev.002