Dear customer st LAPIS Semiconductor Co., Ltd. LAPIS Semiconducto), on the 1 day of October, 2020, implemented the incorporation-type company split (shinsetsu-bunkatsu) in which LAPIS established a new company, LAPIS Technology Co., Ltd. (LAPIS Technology) and LAPIS Technology succeeded LAPIS Semiconductors LSI business. Therefore, all references toLAPIS Semiconductor Co., Ltd,LAPIS Semiconducto and/orLAPI in this document shall be replaced withLAPIS Technology Co., Ltd Furthermore, there are no changes to the documents relating to our products other than the company name, the company trademark, logo, etc. Thank you for your understanding. LAPIS Technology Co., Ltd. October 1, 2020 FEDR45V064B-01 Issue Date: Jan 08, 2016 MR45V064B 64k(8,192-Word 8-Bit) FeRAM (Ferroelectric Random Access Memory) SPI GENERAL DESCRIPTION The MR45V064B is a nonvolatile 8,192-word x 8-bit ferroelectric random access memory (FeRAM) developed in the ferroelectric process and silicon-gate CMOS technology. The MR45V064B is accessed using Serial Peripheral Interface.Unlike SRAMs, this device, whose cells are nonvolatile, eliminates battery backup required to hold data. This device has no mechanisms of erasing and programming memory cells and blocks, such as those used for various EEPROMs. Therefore, the write cycle time can be equal to the read cycle time and the power consumption during a write can be reduced significantly. The MR45V064B can be used in various applications, because the device is guaranteed for the write/read 12 tolerance of 10 cycles per bit and the rewrite count can be extended significantly. FEATURES 8,192-word 8-bit configuration (Serial Peripheral Interface : SPI) A single 1.8V to 3.6V 3.3 V typ power supply Operating frequency: 40MHz 12 Read/write tolerance 10 cycles/bit Data retention 10 years Guaranteed operating temperature range 40 to 85C (Extended temperature version) Package options: 8-pin plastic SOP (P-SOP8-200-1.27-T2K) 1/20