PEDR45V256A-05
Issue Date: Oct. 17, 2011
MR45V256A
256k(32,768-Word 8-Bit) FeRAM (Ferroelectric Random Access Memory) SPI
GENERAL DESCRIPTION
The MR45V256A is a nonvolatile 32,768-word x 8-bit ferroelectric random access memory (FeRAM) developed
in the ferroelectric process and silicon-gate CMOS technology. The MR45V256A is accessed using Serial
Peripheral Interface.Unlike SRAMs, this device, whose cells are nonvolatile, eliminates battery backup required
to hold data. This device has no mechanisms of erasing and programming memory cells and blocks, such as
those used for various EEPROMs. Therefore, the write cycle time can be equal to the read cycle time and the
power consumption during a write can be reduced significantly.
The MR45V256A can be used in various applications, because the device is guaranteed for the write/read
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tolerance of 10 cycles per bit and the rewrite count can be extended significantly.
FEATURES
32,768-word 8-bit configuration (Serial Peripheral Interface : SPI)
A single 3.3 V 0.3 V power supply
Operating frequency: 15MHz
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Read/write tolerance 10 cycles/bit
Data retention 10 years
Guaranteed operating temperature range 40 to 85C (Extended temperature version)
Package options:
8-pin plastic SOP (P-SOP8-200-1.27-T2K )
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PEDR45V256A-05
MR45V256A
PIN CONFIGURATION
8-pin plastic SOP
VCC
CS#1 8
SO HOLD#
2 7
SCK
WP#3 6
VSS4 5 SI
Note:
Signal names that end with # indicate that the signals are negative-true logic.
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