RB085T-90 ROHM

Data Sheet Schottky barrier diode RB085T-90 Applications Dimensions (Unit : mm) Structure Switching power supply Features 1) Cathode common type. (1) (2) (3) (TO-220) 2) Low I R 3) High reliability 9 Construction Silicon epitaxial planer Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Reverse voltage (repetitive peak) V 90 V RM Reverse voltage (DC) V 90 V R 10 Average rectified forward current (*1) Io A 100 Forward current surge peak (60Hz / 1cyc) (*1) I A FSM Junction temperature Tj 150 C Storage temperature Tstg 40 to 150 C (*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=122 C Electrical characteristic (Ta=25C) Parameter Conditions Symbol Min. Typ. Max. Unit Forward voltage V - - 0.83 V I =5A F F I Reverse current - - 150 A V =90 R R Thermal impedance - - 2.5 junction to case jc C/W www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.04 - Rev.D 1/3 Not Recommended for New DesignsRB085T-90 Data Sheet Electrical characteristic curves Ta=150 C 10 100000 1000 Ta=150 C f=1MHz 10000 Ta=125 C Ta=125 C 1 1000 Ta=75 C Ta=75 C Ta=25C 100 100 Ta=-25 C 0.1 Ta=25 C 10 Ta=-25 C 10 1 0.01 0.1 0.01 0.001 1 0 102030405060708090 0 100 200 300 400 500 600 700 800 900 0 5 10 15 20 25 30 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) REVERSE VOLTAGE:V (V) F R R -I CHARACTERISTICS V -Ct CHARACTERISTICS V V -I CHARACTERISTICS R F F R R 550 790 200 540 Ta=25 C 180 Ta=25 C Ta=25 C f=1MHz 530 780 I =5A 160 F V =90V R V =0V R n=30pcs n=30pcs 140 520 n=10pcs 770 510 120 100 500 760 80 490 60 480 AVE:14.3uA 750 40 470 AVE:498.5pF AVE:766.6mV 20 460 740 0 450 V DISPERSION MAP F IR DISPERSION MAP Ct DISPERSION MAP 1000 30 300 Ta=25 C Ifsm 250 25 I =0.5A F Ifsm 1cyc I =1A R 8.3ms 8.3ms 20 Irr=0.25*I 200 R 1cyc 8.3ms n=10pcs 15 100 150 10 100 AVE:136.0A 5 50 AVE:7.40ns 0 0 10 110 100 I DISPERSION MAP trr DISPERSION MAP NUMBER OF CYCLES FSM I -CYCLE CHARACTERISTICS FSM Mounted on epoxy board 15 1000 100 I =5A F IM=100mA time D=1/2 Ifsm 300us t 1ms DC 10 Rth(j-a) 10 Sin( =180) 100 5 1 Rth(j-c) 0 10 0.1 110 100 0 5 10 15 20 0.001 0.01 0.1 1 10 100 1000 TIME:t(ms) TIME:t(s) AVERAGE RECTIFIED I -t CHARACTERISTICS Rth-t CHARACTERISTICS FORWARD CURRENT : Io(A) FSM Io-Pf CHARACTERISTICS www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.04 - Rev.D Not Recommended for New Designs PEAK SURGE PEAK SURGE FORWARD VOLTAGE:V (mV) FORWARD CURRENT:I (A) FORWARD CURRENT : I (A) F F FSM FORWARD CURRENT:I (A) FSM TRANSIENT REVERSE RECOVERY TIME:trr(ns) REVERSE CURRENT:I (uA) THAERMAL IMPEDANCE:Rth (/W) R REVERSE CURRENT:I (uA) R PEAK SURGE CAPACITANCE BETWEEN FORWARD POWER CAPACITANCE BETWEEN FORWARD CURRENT:I (A) TERMINALS:Ct(pF) FSM DISSIPATION:Pf(W) TERMINALS:Ct(pF)