Product Information

RB088T150

RB088T150 electronic component of ROHM

Datasheet
Diode Schottky 150V 10A Automotive 3-Pin(3+Tab) TO-220FN Bulk
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

76: USD 0.5395 ea
Line Total: USD 41

82 - Global Stock
Ships to you between
Mon. 27 May to Fri. 31 May
MOQ: 76  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1768 - WHS 1


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 108
Multiples : 1
108 : USD 0.9871
250 : USD 0.9476
500 : USD 0.9134
1000 : USD 0.8835

82 - WHS 2


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 76
Multiples : 1
76 : USD 0.5395

Read More Specifications

     
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Additional Infomation About Product

Schottky Barrier Diode RB088T150FH Datasheet AEC-Q101 Qualified Application External dimensions (Unit : mm) Structure (2) Switching power supply 4.50.3 0.1 2.80.2 10.00.3 0.1 0.1 Features 1) Cathode common dual type (1) (3) (1) Anode 2) Low I R (2) Cathode (3) Anode 3) High reliability 1 4) AEC-Q101 qualified 1.2 (Limited to HR Type) 1.3 Construction 0.8 Silicon epitaxial planar (1) (2) (3) 0.70.1 0.75 2.60.5 2.540.5 0.05 ROHM : TO220FN 1 Manufacture Date Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Unit V 150 Reverse voltage (repetitive peak) V RM Reverse voltage (DC) V 150 V R 10 Average rectified forward current (*1) Io A Forward current surge peak (60Hz1cyc)(*2) I 50 A FSM Junction temperature Tj 150 C Storage temperature Tstg 55 to 150 C (*1) 1/2 Io per Diode. Mounting on epoxi board. 180Half sine wave (*2) Per Diode. Electrical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions V I =5.0A Forward voltage - 0.78 0.88 V F F Reverse current I -- 15 V =150V A R R Thermal resistance Rth(j-c) - - 2 C/W junction to case www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.10 - Rev.C 1/4 5.00.2 8.00.2 12.00.2 13.5MIN 15.00.4 0.2 8.0Data Sheet RB088T150FH 10000 10 Ta = 150 C 1000 Ta = 150 C 100 1 Ta = 125 C 10 Ta = 125 C 1 Ta = 75 C 0.1 0.1 Ta = 75 C Ta = 25 C 0.01 Ta = 25 C 0.001 Ta = 25 C Ta = 25 C 0.01 0.0001 100 200 300 400 500 600 700 800 900 0 50 100 150 FORWARD VOLTAGE:V (mV) REVERSE VOLTAGE:V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 1000 785 f= 1MHz Ta=25 C 780 V =5A F n=30pcs 775 AVE : 765.6mV 100 770 765 760 10 755 0 5 10 15 20 25 30 REVERSE VOLTAGE:V (V) R V DISPERSION MAP F V -Ct CHARACTERISTICS R 375 460 AVE : 327.3nA Ta=25 C Ta=25 C f=1MHz V =150V 455 R 350 V =0V n=30pcs R n=10pcs 450 AVE : 442.4pF 325 445 300 440 275 435 250 430 I DISPERSION MAP Ct DISPERSION MAP R www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.10 - Rev.C 2/4 CAPACITANCE BETWEEN REVERSE CURRENT:I (nA) FORWARD CURRENT:I (A) F R TERMINALS:Ct(pF) CAPACITANCE BETWEEN FORWARD VOLTAGE:V (mV) F TERMINALS:Ct(pF) REVERSE CURRENT:I ( A) R

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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