RB520CS-30T2R ROHM

Data Sheet Schottky barrier diode RB520CS-30 Applications Dimensions (Unit : mm) Land size figure (Unit : mm) Low current rectification 0.55 Features 1) Ultra Small power mold type. (VMN2) 2) Low I R VMN2 3)High reliability. Construction Structure Silicon epitaxial planar Taping specifications (Unit : mm) Absolute maximum ratings (Ta25C) Parameter Limits Symbol Unit Reverse voltage (DC) 30 V V R Average rectiied forward current Io 100 mA Forward current surge peak 60Hz/1cyc I 500 mA FSM Junction temperature Tj 150 C Storage temperature 40 to 150 Tstg C Electrical characteristics (Ta 25C) Parameter Conditions Symbol Min. Typ. Max. Unit Forward voltage V - - 0.45 V I =10mA F F Reverse current I - - 0.5 V =10V A R R www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.05 - Rev.D 1/3 Not Recommended for New Designs 0.45 0.45 0.5RB520CS-30 Data Sheet 1000000 100 1000 Ta=125C f=1MH Ta=125C 100000 100 Ta=75C Ta=75C 10000 10 Ta=-25C 1000 Ta=25C 1 10 Ta=25C 100 0.1 Ta=-25C 10 0.01 0.001 1 1 010 20 30 0 100 200 300 400 500 600 0 5 10 15 20 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) REVERSE VOLTAGE : VR(V) F R V -I CHARACTERISTICS V -Ct CHARACTERISTICS F F V -I CHARACTERISTICS R R R 370 1000 20 Ta=25C Ta25 C 900 Ta=25C 19 I =10mA F f1MHz 360 V =10V R 18 n=30pcs 800 V 0V R n=30pcs 17 700 n 10pcs 350 16 600 15 500 340 14 400 13 300 AVE : 100.5nA 12 330 200 AVE : 15.94pF 11 100 AVE:338 : 8mV 10 0 320 V DISPERSION MAP I DISPERSION MAP F Ct DISPERSION MAP R 10 20 10 1cyc Ifsm Ifsm Ifsm t 15 8.3ms 8.3ms 8.3ms 1cyc 5 10 5 AVE : 3.90A 5 0 0 0 1 10 100 1 10 100 TIME : t(ms) NUMBER OF CYCLES I DISRESION MAP FSM I -t CHARACTERISTICS I -CYCLE CHARACTERISTICS FSM FSM 0.1 0.02 1000 Rth(j-a) 0.08 0.015 D 1/2 Rth(j-c) 0.06 DC 0.01 Sin(=180) 100 Mounted on epoxy board 0.04 D 1/2 IM=10mA I =100mA F DC 0.005 0.02 1ms time Sin(=180) 300us 0 0 10 0 0.05 0.1 0.15 0.2 0 5 10 15 20 25 30 0.001 0.01 0.1 1 10 100 1000 AVERAGE RECTIFIED TIME : t(s) REVERSE VOLTAGE : V (V) R FORWARD CURRENT : Io(A) Rth-t CHARACTERISTICS V -P CHARACTERISTICS R R Io-Pf CHARACTERISTICS www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.05 - Rev.D Not Recommended for New Designs PEAK SURGE TRANSIENT FORWARD VOLTAGE:V (mV) FORWARD CURRENT:I (mA) F F FORWARD CURRENT:I (A) THAERMAL IMPEDANCE:Rth (C/W) FSM FORWARD POWER REVERSE CURRENT:I (nA) R DISSIPATION:Pf(W) PEAK SURGE REVERSE CURRENT:I (nA) R FORWARD CURRENT:I (A) FSM REVERSE POWER DISSIPATION:P (W) R PEAK SURGE CAPACITANCE BETWEEN CAPACITANCE BETWEEN FORWARD CURRENT:I (A) TERMINALS:Ct(pF) TERMINALS:Ct(pF) FSM