RB521FS-30T40RB ROHM

D Schottky Barrier Diode RB521FS-30 Data Sheet lApplication lDimensions (Unit : mm) lLand Size Figure (Unit : mm) 0.20 General rectification lFeatures 1) Small silicon package (SMD0402) 0 0.010 SMD0402 0.1200.010 2) High Accuracy Manufacturing 0.170 0.010 0.200 0.010 Dimension tolerance10 mm Cathode lStructure DSN0402-2(SMD0402) Low V 3) F Anode lConstruction lTaping Dimensions (Unit : mm) Silicon epitaxial planar type lAbsolute Maximum Ratings (T = 25C) c Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V Duty0.5 30 V RM V Reverse voltage Direct reverse voltage 30 V R Glass epoxy board mounted, 60Hz half sin wave, Average forward rectified current I 100 mA o resistive load 60Hz half sin wave, non-repetitive at Non-repetitive forward current surge peak I 500 mA FSM T =25C , 1cycle a T Operating junction temperature - 150 C j T - Storage temperature -40 to +150 C stg lElectrical Characteristics (T = 25C) j Parameter Symbol Conditions Min. Typ. Max. Unit Forward voltage V I =10mA - 350 370 mV F1 F V =10V Reverse current I - 1.2 7 mA R R www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2016.01 - Rev.A 1/4 Not Recommended for New Designs 0.276 0.010 0.094 0.010 0.400 0.010 0.15 0.26 Data Sheet RB521FS-30 lElectrical Characteristic Curves 100 100000 T = 150 C j T = 150 C j 10000 T = 125 C j T = 125 C j 1000 T = 75 C j 100 10 T = 75 C j T = 25 C j 10 1 T = 25 C T = -25 C j j 0.1 T = -25 C j 1 0.01 0 100 200 300 400 500 600 700 800 0 10 20 30 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 10 400 T = 25 C T=25 C j j I =10mA f = 1MHz F 350 n=30pcs 300 Ave. : 295.2mV 250 200 150 1 100 0 5 10 15 20 25 30 REVERSE VOLTAGE : V (V) R V DISPERSION MAP F V -C CHARACTERISTICS R t www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2016.01 - Rev.A 2/4 Not Recommended for New Designs CAPACITANCE BETWEEN FORWARD CURRENT : I (mA) F TERMINALS : C (pF) t REVERSE CURRENT : I ( mA) FORWARD VOLTAGE : V (mV) R F