RB521ES-30T15R ROHM

F Schottky Barrier Diode RB52 2ES-30 Data Sheet lApplication lDimensions (Unit : mm) lLand Size Figure (Unit : mm) General rectification 0.31 lFeatures 1) Small silicon package 0 0.030 (SMD0603) SMD0603 0.2800.010 0.2600.010 2) High Accuracy 0.3000.010 Manufacturing Dimension Cathode lStructure tolerance 10mm ROHM: SMD0603 3) Low V F Anode lConstruction lTaping Dimensions (Unit : mm) Silicon epitaxial planar type o Absolure Maximum Ratings (Ta=25 C) Parameter Conditions Limits Unit Symbol Dutyf 0.5 Repetitive Peak Reverse Voltage V 30 V RM V Direct Reverse Voltage 30 Reverse Voltage V R Glass epoxy board mounted, 60Hz half sin Average forward rectified current I 100 mA O wave, resistive load, 60Hz half sin wave, one cycle, non-repetitive Non-repetitive Forward Current Surge Peak I 500 mA FSM at T =25C a T - 150 Operating Junction Temperature C j - Storage Temperature T -40 +150 C stg Electrical Characteristics (Tj=25 ) Parameter Conditions Max Symbol Unit Forward Voltage V I =10mA 370 F mV F V =10V Reverse Current I 7 A R R www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2016.12 - Rev.A 1/2 0.3800.010 0.1800.010 0.6000.010 0.23 0.38Data Sheet RB522ES-30 lElectrical Characteristic Curves 1000 10000 T =125 100 T =150 j j T =25 j 1000 f=1MHz Tj=75 T =150 j 100 100 T =125 j T =25 j 10 10 T =-25 j T =75 j 10 1 T =-25 j T =25 j 0.1 0.01 1 1 0 10 20 30 0 100 200 300 400 500 600 700 800 9001000 0 10 20 30 REVERSE VOLTAGE:V (V) FORWARD VOLTAGE V (mV) REVERSE VOLTAGE V (V) R F R V -C CHARACTERISTICS V -I CHARACTERISTICS V -I CHARACTERISTICS R t F F R R 35 10 10 T =25 j 30 I =0.1A F I FSM I 1cyc FSM I =0.1A R 8.3 8.3 25 Irr/IR=0.10 t ms ms T =25 a n=10pcs 1cyc 20 T =25 a 15 10 Ave.:5.6ns 5 0 1 1 1 10 100 1 10 100 NUMBER OF CYCLES TIME:t(ms) I -t CHARACTERISTICS t DISPERSION MAP I -CYCLE CHARACTERISTICS FSM rr FSM 0.20 0.06 1000 T =150 j T =150 j Glass epoxy board mounted P =0.9W F 0.05 IM=10mA 0.15 0.04 1ms time Sin( 180) R th(j-a) 300us D=1/2 0.03 0.10 Sin( 180) 100 D=1/2 0.02 DC 0.05 0.01 DC 0.00 0.00 10 0 20 40 60 80 100 0 10 20 30 0.001 0.01 0.1 1 10 100 1000 AVERAGE RECTIFIED TIME:t(s) REVERSE VOLTAGE:V (V) R FORWARD CURRENT I (mA) o R -t CHARACTERISTICS th V -P CHARACTERISTICS I -P CHARACTERISTICS R R o F 300 I O 0A D=t/T 0V 250 V =V /2 R RM t T=150 V j R T 200 DC D=1/2 150 100 Sin( 180) 50 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta( ) DERATING CURVE (I -T ) o a www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2016.12 - Rev.A 2/2 AVERAGE RECTIFIED FORWARD POWER REVERSE RECOVERY TIME:t (ns) FORWARD CURRENT:I (mA) rr F FORWARD CURRENT:I (mA) o DISSIPATION:P (W) F REVERSE POWER PEAK SURGE REVERSE CURRENT:I (uA) R DISSIPATION:P (W) R FORWARD CURRENT:I (A) FSM PEAK SURGE CAPACITANCE BETWEEN FORWARD CURRENT:I (A) TRANSIENT FSM TERMINALS:C (pF) t THAERMAL IMPEDANCE:R th