RB550EAFHTR ROHM

RB550EAFH Schottky Barrier Diode (AEC-Q101 qualified) Data sheet Outline V 30 V R I 0.7 A o I 12 A FSM Features Inner Circuit High reliability Small mold type Low V F Application Packaging Specifications General rectification Packing Embossed Tape Reel Size(mm) 180 Taping Width(mm) 8 Structure Basic Ordering Unit(pcs) 3000 Silicon epitaxial planar Taping Code TR Marking D2Q Absolute Maximum Ratings (T =25C unless otherwise specified) a Parameter Symbol Conditions Limits Unit V Repetitive peak reverse voltage Duty0.5 30 V RM V Reverse voltage Reverse direct voltage 30 V R Glass epoxy mounted I 60Hz half sin waveform Average rectified forward current 0.7 A o resistive loadper dIode t=100secNon-repetitiveone cycle I Peak forward surge current 12 A FSM per diodeT =25 a (1) T Junction temperature - 150 j T Storage temperature - -40 150 stg Note(1) To avoid occurrence of thermal runaway actual board is to be designed to fulfill dP /dT<1/R . d j th(j-a) (T =25C unless otherwise specified) Characteristics a Value per diode Parameter Symbol Conditions Min. Typ. Max. Unit V I =0.7A Forward voltage 0.36 0.45 0.49 V F F I V =10V R1 - 1 30 A R Reverse current I V =30V - 5 50 A R2 R C=100pFR=1.5k Electrostatic Discharge ESD 15 - - kV 1 discharge at each voltage polarity Attention www.rohm.com 1/5 2017/03/21 Rev.001 2016 ROHM Co., Ltd. All rights reserved.RB550EAFH Data sheet Characteristic Curves www.rohm.com 2/5 2016 ROHM Co., Ltd. All rights reserved. 2017/03/21 Rev.001