2N2222A Silicon NPN Transistor Data Sheet Description Applications General purpose Low power Semicoa Semiconductors offers: NPN silicon transistor Screening and processing per MIL-PRF-19500 Appendix E JAN level (2N2222AJ) JANTX level (2N2222AJX) JANTXV level (2N2222AJV) JANS level (2N2222AJS) QCI to the applicable level 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS Radiation testing (total dose) upon request Features Hermetically sealed TO-18 metal can Also available in chip configuration Chip geometry 0400 Reference document: MIL-PRF-19500/255 Benefits Qualification Levels: JAN, JANTX, Please contact Semicoa for special configurations JANTXV and JANS www.SEMICOA.com or (714) 979-1900 Radiation testing available Absolute Maximum Ratings T = 25C unless otherwise specified C Parameter Symbol Rating Unit Volts Collector-Emitter Voltage V 50 CEO Volts Collector-Base Voltage V 75 CBO Volts Emitter-Base Voltage V 6 EBO mA Collector Current, Continuous I 800 C O Power Dissipation, T = 25 C 0.5 W A P O T Derate linearly above 37.5 C 3.08 mW/C C Operating Junction Temperature T -65 to +200 J C Storage Temperature T -65 to +200 STG C/W Thermal Resistance 325 R JA Semicoa Semiconductors, Inc. Copyright 2002 Rev. N 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 1 www.SEMICOA.com 2N2222A Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at T = 25C A Off Characteristics Parameter Symbol Test Conditions Min Typ Max Units Volts Collector-Emitter Breakdown Voltage V I = 10 mA 50 (BR)CEO C A Collector-Base Cutoff Current I V = 75 Volts 10 CBO1 CB nA Collector-Base Cutoff Current I V = 60 Volts 10 CBO2 CB O A Collector-Base Cutoff Current I V = 60 Volts, T = 150C 10 CBO3 CB A nA Collector-Emitter Cutoff Current I V = 50 Volts 50 CES CE A Emitter-Base Cutoff Current I V = 6 Volts 10 EBO1 EB nA Emitter-Base Cutoff Current I V = 4 Volts 10 EBO2 EB Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% On Characteristics Parameter Symbol Test Conditions Min Typ Max Units = 0.1 mA, V = 10 Volts h I 50 FE1 C CE h I = 1.0 mA, V = 10 Volts 75 325 FE2 C CE h I = 10 mA, V = 10 Volts 100 FE3 C CE DC Current Gain h I = 150 mA, V = 10 Volts 100 300 FE4 C CE h I = 500 mA, V = 10 Volts 30 FE5 C CE h I = 10 mA, V = 10 Volts, 35 FE6 C CE O T = -55 C A V I = 150 mA, I = 15 mA 0.6 1.2 BEsat1 C B Base-Emitter Saturation Voltage Volts V I = 500 mA, I = 50 mA 2.0 BEsat2 C B V I = 150 mA, I = 15 mA 0.3 CEsat1 C B Collector-Emitter Saturation Voltage Volts V I = 500 mA, I = 50 mA 1.0 CEsat2 C B Dynamic Characteristics Parameter Symbol Test Conditions Min Typ Max Units Magnitude Common Emitter, Short V = 20 Volts, I = 20 mA, CE C h 2.5 FE Circuit Forward Current Transfer Ratio f = 100 MHz Small Signal Short Circuit Forward V = 10 Volts, I = 1 mA, CE C h 50 FE Current Transfer Ratio f = 1 kHz V = 10 Volts, I = 0 mA, CB E pF Open Circuit Output Capacitance C 8 OBO 100 kHZ < f < 1 MHz V = 0.5 Volts, I = 0 mA, EB C pF Open Circuit Input Capacitance C 25 IBO 100 kHZ < f < 1 MHz Switching Characteristics ns Saturated Turn-Off Time t 300 off ns Saturated Turn-On Time t 35 on Semicoa Semiconductors, Inc. Copyright 2002 Rev. N 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2 www.SEMICOA.com