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2N2905AJANTX

2N2905AJANTX electronic component of Semicoa

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Manufacturer: Semicoa
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 5.5256 ea
Line Total: USD 5.53

4189 - Global Stock
Ships to you between
Wed. 22 May to Tue. 28 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4179 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 1

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2N2905AJANTX
Semicoa

1 : USD 4.2924

     
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2N2905A Silicon PNP Transistor Data Sheet Description Applications General purpose Low power Semicoa Semiconductors offers: PNP silicon transistor Screening and processing per MIL-PRF-19500 Appendix E JAN level (2N2905AJ) JANTX level (2N2905AJX) JANTXV level (2N2905AJV) JANS level (2N2905AJS) QCI to the applicable level 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS Features Radiation testing (total dose) upon request Hermetically sealed TO-39 metal can Also available in chip configuration Chip geometry 0600 Reference document: MIL-PRF-19500/290 Benefits Qualification Levels: JAN, JANTX, Please contact Semicoa for special configurations JANTXV and JANS www.SEMICOA.com or (714) 979-1900 Radiation testing available Absolute Maximum Ratings T = 25C unless otherwise specified C Parameter Symbol Rating Unit Volts Collector-Emitter Voltage V 60 CEO Volts Collector-Base Voltage V 60 CBO Volts Emitter-Base Voltage V 5 EBO mA Collector Current, Continuous I 600 C Power Dissipation, T = 25 C 0.8 W A P T 5.7 mW/C Derate above 60 C Power Dissipation, T = 25 C 3.0 W C P T 17.2 mW/C Derate above 25 C C/W Thermal Resistance 175 R JA C Operating Junction Temperature T -65 to +200 J C Storage Temperature T -65 to +200 STG Semicoa Semiconductors, Inc. Copyright 2002 Rev. H 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 1 www.SEMICOA.com 2N2905A Silicon PNP Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at T = 25C A Off Characteristics Parameter Symbol Test Conditions Min Typ Max Units Volts Collector-Emitter Breakdown Voltage V I = 10 mA 60 (BR)CEO C A Collector-Base Cutoff Current I V = 60 Volts 10 CBO1 CB nA Collector-Base Cutoff Current I V = 50 Volts 10 CBO2 CB O A Collector-Base Cutoff Current I V = 50 Volts, T = 150C 10 CBO3 CB A A Collector-Emitter Cutoff Current I V = 60 Volts 1 CES CE A Emitter-Base Cutoff Current I V = 5 Volts 10 EBO1 EB nA Emitter-Base Cutoff Current I V = 3.5 Volts 50 EBO2 EB Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% On Characteristics Parameter Symbol Test Conditions Min Typ Max Units h I = 0.1 mA, V = 10 Volts 75 FE1 C CE h I = 1.0 mA, V = 10 Volts 100 450 FE2 C CE h I = 10 mA, V = 10 Volts 100 FE3 C CE DC Current Gain h I = 150 mA, V = 10 Volts 100 300 FE4 C CE h I = 500 mA, V = 10 Volts 50 FE5 C CE h I = 10 mA, V = 10 Volts 50 FE6 C CE O T = -55 C A V I = 150 mA, I = 15 mA 1.3 BEsat1 C B Base-Emitter Saturation Voltage Volts V I = 500 mA, I = 50 mA 2.6 BEsat2 C B V I = 150 mA, I = 15 mA 0.4 CEsat1 C B Collector-Emitter Saturation Voltage Volts V I = 500 mA, I = 50 mA 1.6 CEsat2 C B Dynamic Characteristics Parameter Symbol Test Conditions Min Typ Max Units Magnitude Common Emitter, Short V = 20 Volts, I = 50 mA, CE C |h | 2.0 FE Circuit Forward Current Transfer Ratio f = 100 MHz Small Signal Short Circuit Forward V = 10 Volts, I = 1 mA, CE C h 100 FE Current Transfer Ratio f = 1 kHz V = 10 Volts, I = 0 mA, CB C pF Open Circuit Output Capacitance C 8 OBO 100 kHZ < f < 1 MHz V = 2.0 Volts, I = 0 mA, EB E pF Open Circuit Input Capacitance C 30 IBO 100 kHZ < f < 1 MHz Switching Characteristics t ns on Saturated Turn-On Time 45 Saturated Turn-Off Time t 300 off ns Semicoa Semiconductors, Inc. Copyright 2002 Rev. H 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2 www.SEMICOA.com

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