The documentation and process conversion measures INCH-POUND necessary to comply with this document shall be MIL-PRF-19500/291U completed by 16 May 2013. 16 February 2013 SUPERSEDING MIL-PRF-19500/291T 23 September 2011 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING, TYPES 2N2906A, 2N2906AL, 2N2907A, 2N2907AL, 2N2906AUA, 2N2907AUA, 2N2906AUB, 2N2906AUBC, 2N2907AUB, 2N2907AUBC, 2N2906AUBN, 2N2906AUBCN, 2N2907AUBN, AND 2N2907AUBCN, JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH JANHC, JANKC, JANKCM, JANKCD, JANKCP, JANKCL, JANKCR, JANKCF, JANKCG, AND JANKCH This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for PNP, silicon, switching transistors. Five levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two levels of product assurance are provided for each unencapsulated device type. Radiation hardness assurance (RHA) level designators M, D, P, L R, F, G, and H are appended to the device prefix to identify devices which have passed RHA requirements. * 1.2 Physical dimensions. See figure 1 (similar to a TO-18), figure 2, (surface mount case outlines UA, figure 3 UB (metal lid, as shield, connected to fourth pad), UBC (ceramic lid, braze-ring connected to fourth pad), UBN (3-pin, isolated metal lid), and UBCN (3-pin, isolated ceramic lid) and figures 4, and 5 (JANHC and JANKC). 1.3 Maximum ratings. Unless otherwise specified T = +25C. A Types I V V V T and T C CBO EBO CEO J STG mA dc V dc V dc V dc C All devices 600 60 5 60 -65 to +200 * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at MIL-PRF-19500/291U 1.3 Maximum ratings. Unless otherwise specified T = +25C. - Continued. A Types P P P P R R R JA JC JSP(IS) R T T T T JSP(AM) (2) (3) (2) (2) (3) (2) (3) T = +25C T = +25C T = +25C T = A C SP(IS) SP(AM) (3) (1) (2) (1) (2) (1) (2) +25C (1) (2) W W W W C/W C/W C/W C/W 2N2906A, L, 0.5 1.0 N/A N/A 325 150 N/A N/A 2N2907A, L 0.5 1.0 N/A N/A 325 150 N/A N/A 2N2906AUA, (4) 0.5 N/A 1.0 1.5 (4) 325 N/A 110 40 2N2907AUA (4) 0.5 N/A 1.0 1.5 (4) 325 N/A 110 40 2N2906AUB, (4)0.5 N/A 1.0 N/A (4) 325 N/A 90 N/A and UBN 2N2907AUB (4) 0.5 N/A 1.0 N/A (4) 325 N/A 90 N/A and UBN 2N2906AUBC (4) 0.5 N/A 1.0 N/A (4) 325 N/A 90 N/A and UBCN 2N2907AUBC (4) 0.5 N/A 1.0 N/A (4) 325 N/A 90 N/A and UBCN (1) For derating, see figures 6, 7, 8, 9, and 10. (2) See 3.3 for abbreviations. (3) For thermal curves, see figures 11, 12, 13, 14, and 15. (4) For non-thermal conductive PCB or unknown PCB surface mount conditions in free air, substitute figures 6 and 11 for the UA, UB,, UBC, UBN, and UBCN package and use R . JA 1.4 Primary electrical characteristics. Unless otherwise specified T = +25C. A h at V = 10 V dc FE CE h h h h (1) h (1) FE1 FE2 FE3 FE4 FE5 I = 0.1 mA dc I = 1.0 mA dc I = 10 mA dc I = 150 mA dc I = 500 mA dc C C C C C 2N2906A, 2N2907A, 2N2906A 2N2907A 2N2906A 2N2907A 2N2906A 2N2907A 2N2906A 2N2907A L, L, UA,UB, L, UA,UB, , L, UA,UB, L, UA,UB, L, UA,UB, L, UA,UB, L, UA,UB, L, UA,UB, L, UA,UB, UA,UB, UBC, UBN, UBC, UBN, UBC, UBN, UBC, UBN, UBC, UBN, UBC, UBN, UBC, UBN, UBC, UBN, UBC, UBN, UBC, UBN, UBCN UBCN UBCN UBCN UBCN UBCN UBCN UBCN UBCN UBCN Min 40 75 40 100 40 100 40 100 40 50 Max 175 450 120 300 Switching (saturated) Types Limit h C t t fe obo on off See figure 16 See figure 17 f = 100 MHz V = 20 V dc, 100 kHz f 1 MHz CE V = 10 V dc, I = 0 I = 20 mA dc CB E C pF ns ns 2N2906A, 2N2907A, L, UA, UB, UBC, Min 2.0 UBN, UBCN Max 8 45 300 Types Limits V (1) V (1) V (1) V (1) CE(sat)1 CE(sat)2 BE(sat)1 BE(sat)2 I = 150 mA dc I = 500 mA dc I = 150 mA dc I = 500 mA dc C C C C I = 15 mA dc I = 50 mA dc I = 15 mA dc I = 50 mA dc B B B B 2N2906A, 2N2907A, V dc V dc V dc V dc L, UA, UB, UBC Min 0.6 UBN, UBCN Max 0.4 1.6 1.3 2.6 (1) Pulsed see 4.5.1. 2