2N3501UB
Silicon NPN Transistor
Data Sheet
Description Applications
General purpose
Low power
Semicoa Semiconductors offers:
NPN silicon transistor
Screening and processing per MIL-PRF-19500 Appendix E
JAN level (2N3501UBJ)
JANTX level (2N3501UBJX)
JANTXV level (2N3501UBJV)
JANS level (2N3501UBJS)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
Radiation testing (total dose) upon request
Features
Hermetically sealed TO-39 metal can
Also available in chip configuration
Chip geometry 5620
Reference document:
MIL-PRF-19500/366
Benefits
Qualification Levels: JAN, JANTX,
Please contact Semicoa for special configurations
JANTXV and JANS
www.SEMICOA.com or (714) 979-1900
Radiation testing available
T = 25C unless otherwise specified
Absolute Maximum Ratings C
Parameter Symbol Rating Unit
Volts
Collector-Emitter Voltage V 150
CEO
Volts
Collector-Base Voltage V 150
CBO
Volts
Emitter-Base Voltage V 6
EBO
mA
Collector Current, Continuous I 300
C
O
W
Power Dissipation, T = 25 C .5
A
P
O T
Derate linearly above 25 C 3.08 mW/C
C/W
Thermal Resistance 325
R
JA
C
Operating Junction Temperature T -65 to +200
J
C
Storage Temperature T -65 to +200
STG
Semicoa
Copyright 2004
Rev. J.2 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2
www.SEMICOA.com 2N3501UB
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T = 25C
A
Off Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Volts
Collector-Emitter Breakdown Voltage V I = 10 mA 150
(BR)CEO C
I V = 150 Volts 10 A
CB
CBO1
V = 75 Volts
Collector-Base Cutoff Current I 50 nA
CBO2 CB
I V = 75 Volts, T = 150C 50
CBO3 A
CB A
A
Collector-Emitter Cutoff Current I V = 120 Volts 1
CEO CE
I V = 6 Volts 10 A
EBO1 EB
Emitter-Base Cutoff Current
I V = 4 Volts 25 nA
EBO2 EB
Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%
On Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
h I = 0.1 mA, V = 10 Volts 35
FE1 C CE
h I = 1.0 mA, V = 10 Volts 50
FE2 C CE
h I = 10 mA, V = 10 Volts 75
FE3 C CE
DC Current Gain h I = 1500 mA, V = 10 Volts 100 300
FE4 C CE
h I = 300 mA, V = 10 Volts 20
FE5 C CE
h I = 150 mA, V = 10 Volts 45
FE7 C CE
T = -55C
A
V I = 10 mA, I = 1 mA 0.8
BEsat1 C B
Volts
Base-Emitter Saturation Voltage
V I = 150 mA, I = 15 mA 1.2
BEsat2 C B
V I = 10 mA, I = 1 mA 0.2
CEsat1 C B
Volts
Collector-Emitter Saturation Voltage
V I = 150 mA, I = 15 mA 0.4
CEsat2 C B
Dynamic Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Magnitude Common Emitter, Short V = 20 Volts, I = 20 mA,
CE C
|h | 1.5 8
FE
Circuit Forward Current Transfer Ratio f = 100 MHz
Small Signal Short Circuit Forward V = 10 Volts, I = 10 mA,
CE C
h 75 375
FE
Current Transfer Ratio f = 1 kHz
V = 10 Volts, I = 0 mA,
CB E
pF
Open Circuit Output Capacitance C 8
OBO
100 kHZ < f < 1 MHz
V = 0.5 Volts, I = 0 mA,
EB C
pF
Open Circuit Input Capacitance C 80
IBO
100 kHZ < f < 1 MHz
V = 10 Volts, I = 0.5 mA,
NF CE C
1
16
f = 1 kHz, R = 1 k
g
Noise Figure dB
V = 10 Volts, I = 0.5 mA,
CE C
6
NF
f = 10 kHz, R = 1 k
2 g
Switching Characteristics
V = 5 Volts, I = 150 mA,
EB C
ns
Saturated Turn-On Time t 115
ON
I = 15 mA
B1
ns
Saturated Turn-Off Time t I = 150 mA, I =I =15 mA 1,150
OFF C B1 B2
Semicoa
Copyright 2004
Rev. J.2 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2
www.SEMICOA.com