2N3507L Silicon NPN Transistor Data Sheet Description Applications General purpose switching transistor Low power SEMICOA Corporation offers: NPN silicon transistor Screening and processing per MIL-PRF-19500 Appendix E JAN level (2N3507LJ) JANTX level (2N3507LJX) JANTXV level (2N3507LJV) JANS level (2N3507LJS) QCI to the applicable level 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS Radiation testing (total dose) upon request Features Hermetically sealed TO-5 metal can Also available in chip configuration Chip geometry 1506 Reference document: MIL-PRF-19500/349 Please contact SEMICOA for special configurations Benefits www.SEMICOA.com or (714) 979-1900 Qualification Levels: JAN, JANTX, JANTXV and JANS Radiation testing available Absolute Maximum Ratings T = 25C unless otherwise specified C Parameter Symbol Rating Unit Volts Collector-Emitter Voltage V 50 CEO Volts Collector-Base Voltage V 80 CBO Volts Emitter-Base Voltage V 5 EBO A Collector Current, Continuous I 3 C O Power Dissipation, T = 25 C 1 W A P O T Derate linearly above 25 C 5.71 mW/C O W Power Dissipation, T = 25 C 5 C P O T Derate linearly above 25 C 28.6 mW/C C/W Thermal Resistance 175 R JA Operating Junction Temperature T J C -65 to +200 Storage Temperature T STG SEMICOA Corporation Copyright 2010 Rev. E 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2 www.SEMICOA.com 2N3507L Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at T = 25C A Off Characteristics Parameter Symbol Test Conditions Min Typ Max Units Volts Collector-Base Breakdown Voltage V 80 I = 100 A (BR)CBO C Volts Collector-Emitter Breakdown Voltage V I = 10 mA 50 (BR)CEO C Volts Emitter-Base Breakdown Voltage V I = 10 A 5 (BR)EBO E A Collector-Emitter Cutoff Current I V = 60 Volts, V = 4 Volts 1 CEX1 CE EB V = 60 Volts, V = 4 Volts, CE EB mA Collector-Emitter Cutoff Current I 1.5 CEX2 T = 150 C A Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% On Characteristics Parameter Symbol Test Conditions Min Typ Max Units h I = 500 mA, V = 1 Volts 35 175 FE1 C CE h I = 1.5 A, V = 2 Volts 30 150 FE2 C CE h I = 2.5 A, V = 3 Volts 25 FE3 C CE DC Current Gain h I = 3.0 A, V = 5 Volts 20 FE4 C CE h I = 500 mA, V = 1 Volts 17 FE5 C CE T = -55C A V I = 500 mA, I = 50 mA 1.0 BEsat1 C B Volts Base-Emitter Saturation Voltage V I = 1.5 A, I = 150 mA 0.8 1.3 BEsat2 C B V I = 2.5 A, I = 250 mA 2.0 BEsat3 C B V I = 500 mA, I = 50 mA 0.5 CEsat1 C B Volts Collector-Emitter Saturation Voltage V I = 1.5 A, I = 150 mA 1.0 CEsat2 C B V I = 2.5 A, I = 250 mA 1.5 CEsat3 C B Dynamic Characteristics Parameter Symbol Test Conditions Min Typ Max Units Magnitude Common Emitter, Short V = 5 Volts, I = 100 mA, CE C h 3 15 FE Circuit Forward Current Transfer Ratio f = 20 MHz V = 10 Volts, I = 0 mA, CB E pF Open Circuit Output Capacitance C 40 OBO 100 kHZ < f < 1 MHz V = 3 Volts, I = 0 mA, EB C pF Open Circuit Input Capacitance C 300 IBO 100 kHZ < f < 1 MHz ns Delay Time t I = 1.5 A, I = 150 mA 15 d C B1 ns Rise Time t I = 1.5 A, I = 150 mA 30 r C B1 Switching Characteristics ns Storage Time t I = 1.5 A, I =I = 150 mA 55 s C B1 B2 ns Fall Time t I = 1.5 A, I =I = 150 mA 35 f C B1 B2 SEMICOA Corporation Copyright 2010 Rev. E 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2 www.SEMICOA.com