INCH-POUND
The documentation and process conversion measures
necessary to comply with this document shall be
MIL-PRF-19500/357M
completed by 6 August 2013.
6 May 2013
SUPERSEDING
MIL-PRF-19500/357L
17 July 2010
PERFORMANCE SPECIFICATION SHEET
* SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, AMPLIFIER,
TYPES 2N3634 THROUGH 2N3637, 2N3634UB THROUGH 2N3637UB, 2N3634UBN THROUGH 2N3637UBN,
2N3634L THROUGH 2N3637L, JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF,
JANSG, JANSH, JANHCA, JANKCA, JANKCAM, JANKCAD, JANKCAP, JANKCAL, JANKCAR, JANKCAF,
JANKCAG, JANKCAH, JANHCB, JANKCB, JANKCBM, JANKCBD, JANKCBP, JANKCBL,
JANKCBR, JANKCBF, JANKCBG, AND JANKCBH
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for PNP, silicon, low-power amplifier, and
switching transistors. Four levels of product assurance are provided for each encapsulated device type as specified
in MIL-PRF-19500 and two levels of product assurance are provided for unencapsulated devices. RHA level
designators M, D, P, L, R, F, G, and H are appended to the device prefix to identify devices, which have
passed RHA requirements.
* 1.2 Physical dimensions. See figure 1 (TO-5 and TO-39), figure 2 (UB and UBN), and figures 3 and 4 (JANHC
and JANKC).
* 1.3 Maximum ratings. Unless otherwise specified T = +25 C.
A
P (1) P (2) P (3) R R R I T and V V V
T T T JA JC JSP C J CBO CEO EBO
Types T = T = T = T
A C SP (4) (4) (4) STG
+25C +25C +25C
W W W C/W C/W C/W A dc C V dc V dc V dc
2N3634, 2N3634L 1 5 N/A 1 140 140 5
175 35 N/A -65 to
2N3634UB and UBN 0.5 N/A 1.5 1 140 140 5
325 N/A 90 +200
2N3635, 2N3635L 1 5 N/A 1 140 140 5
175 35 N/A
2N3635UB and UBN 0.5 N/A 1.5 325 N/A 90 1 140 140 5
2N3636, 2N3636L 1 5 N/A 175 35 N/A 1 175 175 5
2N3636UB and UBN 0.5 N/A 1.5 1 175 175 5
325 N/A 90
2N3637, 2N3637L 1 5 N/A 1 175 175 5
175 35 N/A
2N3637UB and UBN 0.5 N/A 1.5 1 175 175 5
325 N/A 90
* (1) See figure 5 and 6.
* (2) See figure 7.
* (3) See figure 8.
* (4) See figures 9, 10, and 11.
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil . Since
contact information can change, you may want to verify the currency of this address information using the
ASSIST Online database at MIL-PRF-19500/357M
1.4 Primary electrical characteristics. Unless otherwise specified, T = +25 C.
A
h at V = 10 V dc |h | C
FE CE fe obo
Types
h h h h h V = 30 V dc V = 20 V dc
FE1 FE2 FE3 FE4 FE5 CE CB
I = 0.1 I = 1.0 IC = 10 IC = 50 IC = 150 IC = 30 mA dc IE = 0
C C
mA dc mA dc (1) mA dc (1) f = 100 Mhz
mA dc mA dc 100 Khz f
(1)
(1) (1) 1 Mhz
Min Min Min Min Max Min Max Min Max Max
2N3634, 2N3634L 25 45 50 50 150 30 1.5 8.0 10
2N3634UB and UBN 25 45 50 50 150 30 1.5 8.0 10
2N3635, 2N3635L 55 90 100 100 300 60 2.0 8.5 10
2N3635UB and UBN 55 90 100 100 300 60 2.0 8.5 10
2N3636, 2N3636L 25 45 50 50 150 30 1.5 8.0 10
2N3636UB and UBN 25 45 50 50 150 30 1.5 8.0 10
2N3637, 2N3637L 55 90 100 100 300 60 2.0 8.5 10
2N3637UB and UBN 55 90 100 100 300 60 2.0 8.5 10
Switching parameters
V V V V
CE(sat)1 CE(sat)2 BE(sat)1 BE(sat)2
t t t t
I = 10 mA dc I = 50 mA dc I = 10 mA dc I = 50 mA dc (1) d r s f
C C C C
(1) (1) (1)
I = 5 mA dc
B
I = 1 mA dc I = 5 mA dc I = 1 mA dc
B B B
V dc V dc V dc V dc ns ns ns ns
Minimum 0.65
Maximum 0.3 0.6 0.8 0.90 100 100 500 150
(1) Pulsed (see 4.5.1).
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-19500 - Semiconductor Devices, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-750 - Test Methods for Semiconductor Devices.
* (Copies of these documents are available online at