2N3810
Silicon PNP Transistor
Data Sheet
Description Applications
General purpose
Matched Dual transistors
Semicoa Semiconductors offers:
PNP silicon transistor
Screening and processing per MIL-PRF-19500 Appendix E
JAN level (2N3810J)
JANTX level (2N3810JX)
JANTXV level (2N3810JV)
JANS level (2N3810JS)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
Radiation testing (total dose) upon request
Features
Hermetically sealed TO-78 metal can
Also available in chip configuration
Chip geometry 0220
Reference document:
MIL-PRF-19500/336
Benefits
Qualification Levels: JAN, JANTX,
Please contact Semicoa for special configurations
JANTXV and JANS
www.SEMICOA.com or (714) 979-1900
Radiation testing available
Absolute Maximum Ratings T = 25C unless otherwise specified
C
Parameter Symbol Rating Unit
Volts
Collector-Emitter Voltage V 60
CEO
Volts
Collector-Base Voltage V 60
CBO
Volts
Emitter-Base Voltage V 5
EBO
mA
Collector Current, Continuous I 50
C
300 one section
mW
Power Dissipation, T = 25C
A
600 both sections
P
T
1.71one section
mW/C
Derate linearly above 25C
3.43 both sections
C
Operating Junction Temperature T -65 to +200
J
C
Storage Temperature T -65 to +200
STG
Semicoa Semiconductors, Inc.
Copyright 2002
Rev. G 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 1
www.SEMICOA.com
2N3810
Silicon PNP Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T = 25C
A
Off Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Volts
Collector-Emitter Breakdown Voltage V 60
I = 100 A
(BR)CEO C
I V = 60 Volts 10 A
CB
CBO1
V = 50 Volts
Collector-Base Cutoff Current I 10 nA
CBO2 CB
I V = 50 Volts, T = 150C 10
CBO3 A
CB A
I V = 5 Volts 10
A
EBO1 EB
Emitter-Base Cutoff Current
I V = 4 Volts 10 nA
EBO2 EB
On Characteristics Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%
Parameter Symbol Test Conditions Min Typ Max Units
I = 10 A, V = 5 Volts
h C CE 100
FE2
I = 100 A, V = 5 Volts
h 150 450
FE3 C CE
h I = 1 mA, V = 5 Volts 150 450
FE4 C CE
I = 10 mA, V = 5 Volts
DC Current Gain h 125
FE5 C CE
h I = 100 A, V = 5 Volts 60
FE6 C CE
T = -55C
A
h /h 0.9 1.0
FE3-1 FE3-2 I = 100 A, V = 5 Volts
C CE
V V = 5 Volts, I = 100 A 0.7 Volts
BE CE C
|V -V | 5 mVolts
V = 5 Volts, I = 10 A
BE1 BE2 1 CE C
Base-Emitter Voltage
|V -V | 3 mVolts
BE1 BE2 2 V = 5 Volts, I = 100 A
CE C
|V -V | 5 mVolts
BE1 BE2 3 V = 5 Volts, I = 10 mA
CE C
V I = 100 A, I = 10 A 0.7
BEsat1 C B
Volts
Base-Emitter Saturation Voltage
V 0.8
BEsat2 I = 1 mA, I = 100 A
C B
Collector-Emitter Saturation V I = 100 A, I = 10 A 0.20
CEsat1 C B
Volts
Voltage V 0.25
CEsat2 I = 1 mA, I = 100 A
C B
Semicoa Semiconductors, Inc.
Copyright 2002
Rev. G 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2
www.SEMICOA.com