2N3507
Silicon NPN Transistor
Data Sheet
Description Applications
General purpose switching transistor
Low power
SEMICOA offers:
NPN silicon transistor
Screening and processing per MIL-PRF-19500 Appendix E
JAN level (2N3507J)
JANTX level (2N3507JX)
JANTXV level (2N3507JV)
JANS level (2N3507JS)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
Features
Radiation testing (total dose) upon request
Hermetically sealed TO-39 metal can
Also available in chip configuration
Chip geometry 1506
Reference document:
MIL-PRF-19500/349
Benefits
Qualification Levels: JAN, JANTX,
Please contact SEMICOA for special configurations
JANTXV and JANS
www.SEMICOA.com or (714) 979-1900
Radiation testing available
T = 25C unless otherwise specified
Absolute Maximum Ratings C
Parameter Symbol Rating Unit
Volts
Collector-Emitter Voltage V 50
CEO
Volts
Collector-Base Voltage V 80
CBO
Volts
Emitter-Base Voltage V 5
EBO
A
Collector Current, Continuous I 3
C
O
Power Dissipation, T = 25 C 1 W
A
P
O T
Derate linearly above 25 C 5.71
mW/C
O
Power Dissipation, T = 25 C 5 W
C
P
O
T
Derate linearly above 25 C 28.6 mW/C
C/W
Thermal Resistance R 175
JA
Operating Junction Temperature T
J
C
-65 to +200
Storage Temperature T
STG
SEMICOA
Copyright 2007
Rev. E 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2
www.SEMICOA.com 2N3507
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T = 25C
A
Off Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Volts
Collector-Base Breakdown Voltage V 80
I = 100 A
(BR)CBO C
Volts
Collector-Emitter Breakdown Voltage V I = 10 mA 50
(BR)CEO C
Volts
Emitter-Base Breakdown Voltage V I = 10 A 5
(BR)EBO
E
A
Collector-Emitter Cutoff Current I V = 60 Volts, V = 4 Volts 1
CEX1 CE EB
V = 60 Volts, V = 4 Volts,
CE EB
mA
Collector-Emitter Cutoff Current I 1.5
CEX2
T = 150 C
A
Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%
On Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
h I = 500 mA, V = 1 Volts 35 175
FE1 C CE
h I = 1.5 A, V = 2 Volts 30 150
FE2 C CE
h I = 2.5 A, V = 3 Volts 25
FE3 C CE
DC Current Gain
h I = 3.0 A, V = 5 Volts 20
FE4 C CE
h I = 500 mA, V = 1 Volts 17
FE5 C CE
T = -55C
A
V I = 500 mA, I = 50 mA 1.0
BEsat1 C B
Volts
Base-Emitter Saturation Voltage V I = 1.5 A, I = 150 mA 0.8 1.3
BEsat2 C B
V I = 2.5 A, I = 250 mA 2.0
BEsat3 C B
V I = 500 mA, I = 50 mA 0.5
CEsat1 C B
Volts
Collector-Emitter Saturation Voltage V I = 1.5 A, I = 150 mA 1.0
CEsat2 C B
V I = 2.5 A, I = 250 mA 1.5
CEsat3 C B
Dynamic Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Magnitude Common Emitter, Short V = 5 Volts, I = 100 mA,
CE C
|h | 3 15
FE
Circuit Forward Current Transfer Ratio f = 20 MHz
V = 10 Volts, I = 0 mA,
CB E
pF
Open Circuit Output Capacitance C 40
OBO
100 kHZ < f < 1 MHz
V = 3 Volts, I = 0 mA,
EB C
pF
Open Circuit Input Capacitance C 300
IBO
100 kHZ < f < 1 MHz
ns
Delay Time t I = 1.5 A, I = 150 mA 15
d C B1
ns
Rise Time t I = 1.5 A, I = 150 mA 30
r C B1
Switching Characteristics
ns
Storage Time t I = 1.5 A, I =I = 150 mA 55
s C B1 B2
ns
Fall Time t I = 1.5 A, I =I = 150 mA 35
f C B1 B2
SEMICOA
Copyright 2007
Rev. E 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2
www.SEMICOA.com