2N3700UB
Silicon NPN Transistor
Data Sheet
Description Applications
General purpose
Low power
Semicoa Semiconductors offers:
NPN silicon transistor
Screening and processing per MIL-PRF-19500 Appendix E
JAN level (2N3700UBJ)
JANTX level (2N3700UBJX)
JANTXV level (2N3700UBJV)
JANS level (2N3700UBJS)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
Radiation testing (total dose) upon request
Features
Hermetically sealed Cersot ceramic
Also available in chip configuration
Chip geometry 4500
Reference document:
MIL-PRF-19500/391
Benefits
Qualification Levels: JAN, JANTX,
JANTXV and JANS
Radiation testing available
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Absolute Maximum Ratings T = 25C unless otherwise specified
C
Parameter Symbol Rating Unit
Collector-Emitter Voltage V 80 Volts
CEO
Collector-Base Voltage V 140 Volts
CBO
Emitter-Base Voltage V 7 Volts
EBO
Collector Current, Continuous I 1 A
C
O
W
Power Dissipation, T = 25 C 0.5
A
P
O T
Derate linearly above 37.5 C 3.08
mW/C
O
W
Power Dissipation, T = 25 C 1.16
C
P
O T
Derate linearly above 25 C 6.63
mW/C
Thermal Resistance 325
R C/W
JA
Operating Junction Temperature T
J
-65 to +200
C
Storage Temperature T
STG
Semicoa Semiconductors, Inc.
Copyright 2002
Rev. G 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2
www.SEMICOA.com
2N3700UB
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T = 25C
A
Off Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Volts
Collector-Emitter Breakdown Voltage V I = 30 mA 80
(BR)CEO C
A
Collector-Base Cutoff Current I V = 140 Volts 10
CBO1 CB
nA
Collector-Emitter Cutoff Current I V = 90 Volts 10
CES1 CE
A
Collector-Emitter Cutoff Current I V = 90 Volts, T = 150C 10
CES2
CE A
A
Emitter-Base Cutoff Current I V = 7 Volts 10
EBO1 EB
nA
Emitter-Base Cutoff Current I V = 5 Volts 10
EBO2 EB
Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%
On Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
h I = 150 mA, V = 10 Volts 100 300
C CE
FE1
I = 0.1 mA, V = 10 Volts
h 50 200
FE2 C CE
h I = 10 mA, V = 10 Volts 90
C CE
FE3
I = 500 mA, V = 10 Volts
DC Current Gain h 50 200
FE4 C CE
h I = 1 A, V = 10 Volts 15
C CE
FE5
I = 150 mA, V = 10 Volts
h 40
FE6 C CE
T = -55C
A
Volts
Base-Emitter Saturation Voltage V I = 150 mA, I = 15 mA 1.1
BEsat C B
V I = 150 mA, I = 15 mA 0.2
CEsat1 C B
Volts
Collector-Emitter Saturation Voltage
V I = 500 mA, I = 50 mA 0.5
CEsat2 C B
Dynamic Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Magnitude Common Emitter, Short V = 10 Volts, I = 50 mA,
CE C
|h | 5 20
FE
Circuit Forward Current Transfer Ratio f = 20 MHz
Small Signal Short Circuit Forward V = 5 Volts, I = 1 mA,
CE C
h 80 400
FE
Current Transfer Ratio f = 1 kHz
V = 10 Volts, I = 0 mA,
CB E
pF
Open Circuit Output Capacitance C 12
OBO
100 kHZ < f < 1 MHz
V = 0.5 Volts, I = 0 mA,
EB C
pF
Open Circuit Input Capacitance C 60
IBO
100 kHZ < f < 1 MHz
V = 10 Volts, I = 10 mA,
CB E
ps
Collector Base time constant r C 400
b C
f = 79.8 MHz
V = 10 Volts, I = 100 A,
CE C
4
Noise Figure NF dB
f = 200 Hz, R = 1 k
g
Switching Characteristics
ns
Saturated Turn-On Time t +t 30
ON OFF
Semicoa Semiconductors, Inc.
Copyright 2002
Rev. G 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2
www.SEMICOA.com