2N4033
Silicon PNP Transistor
Data Sheet
Description Applications
High-speed switching
Low Power
Semicoa Semiconductors offers:
PNP silicon transistor
Screening and processing per MIL-PRF-19500 Appendix E
JAN level (2N4033J)
JANTX level (2N4033JX) and
JANTXV level (2N4033JV)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
Radiation testing (total dose) upon request
Features
Hermetically sealed TO-39 metal can
Also available in chip configuration
Chip geometry 6700
Reference document:
MIL-PRF-19500/512
Benefits
Qualification Levels: JAN, JANTX, and
Please contact Semicoa for special configurations
JANTXV
www.SEMICOA.com or (714) 979-1900
Radiation testing available
Absolute Maximum Ratings T = 25C unless otherwise specified
C
Parameter Symbol Rating Unit
Volts
Collector-Emitter Voltage V 80
CEO
Volts
Collector-Base Voltage V 80
CBO
Volts
Emitter-Base Voltage V 5
EBO
A
Collector Current, Continuous I 1
C
Power Dissipation, T = 25C 0.8 W
A
P
T
Derate linearly above 60C 5.7 mW/C
C/W
Thermal Resistance 175
R
JA
C
Operating Junction Temperature T -65 to +200
J
C
Storage Temperature T -65 to +200
STG
Semicoa Semiconductors, Inc.
Copyright 2002
Rev. E 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2
www.SEMICOA.com
2N4033
Silicon PNP Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T = 25C
A
Off Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
I V = 80 Volts 10 A
CB
CBO1
V = 60 Volts
Collector-Base Cutoff Current I 10 nA
CBO2 CB
I 25
V = 60 Volts, T = 150C A
CBO3 CB A
nA
Collector-Emitter Cutoff Current I V = 60 Volts, V = 2 Volts 25
CEX CE EB
I V = 5 Volts 10
A
EBO1 BE
Emitter-Base Cutoff Current
I V = 3 Volts 25 nA
EBO2 BE
On Characteristics Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%
Parameter Symbol Test Conditions Min Typ Max Units
h I = 100 A, V = 5 Volts 50
FE1 C CE
h I = 100 mA, V = 5 Volts 100 300
FE2 C CE
h I = 500 mA, V = 5 Volts 70
FE3 C CE
DC Current Gain
h I = 1 A, V = 5 Volts 25
FE4 C CE
h I = 500 mA, V = 5 Volts 30
FE5 C CE
T = -55C
A
V I = 150 mA, I = 15 mA 0.9
BEsat1 C B
Volts
Base-Emitter Saturation Voltage
V I = 500 mA, I = 50 mA 1.2
BEsat2 C B
V I = 150 mA, I = 15 mA 0.15
CEsat1 C B
Volts
Collector-Emitter Saturation Voltage V I = 500 mA, I = 50 mA 0.50
CEsat2 C B
V I = 1 A, I = 100 mA 1.00
CEsat3 C B
Dynamic Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Magnitude Common Emitter, Short V = 10 Volts, I = 50 mA,
CE C
|h | 1.5 6.0
FE
Circuit Forward Current Transfer Ratio f = 100 MHz
V = 10 Volts, I = 0 mA,
CB E
Open Circuit Output Capacitance C 20 pF
OBO
100 kHZ < f < 1 MHz
V = 0.5 Volts, I = 0 mA,
EB C
Open Circuit Input Capacitance C 80 pF
IBO
100 kHZ < f < 1 MHz
Switching Characteristics
Delay Time t 15
d
I = 500 mA, I = 50 mA ns
C B
Rise Time t 25
r
Storage Time t 175
s
I = 500 mA, I = 50 mA ns
C B
Fall Time t 35
f
Semicoa Semiconductors, Inc.
Copyright 2002
Rev. E 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2
www.SEMICOA.com