2N2857 Silicon NPN Transistor Data Sheet Description Applications Ultra-High frequency transistor Low power Semicoa Semiconductors offers: NPN silicon transistor Screening and processing per MIL-PRF-19500 Appendix E JAN level (2N2857J) JANTX level (2N2857JX) JANTXV level (2N2857JV) JANS level (2N2857JS) QCI to the applicable level 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS Radiation testing (total dose) upon request Features Hermetically sealed TO-72 metal can Also available in chip configuration Chip geometry 0011 Reference document: MIL-PRF-19500/343 Benefits Qualification Levels: JAN, JANTX, Please contact Semicoa for special configurations JANTXV and JANS www.SEMICOA.com or (714) 979-1900 Radiation testing available Absolute Maximum Ratings T = 25C unless otherwise specified C Parameter Symbol Rating Unit Volts Collector-Emitter Voltage V 15 CEO Volts Collector-Base Voltage V 30 CBO Volts Emitter-Base Voltage V 3 EBO mA Collector Current, Continuous I 40 C O mW Power Dissipation, T = 25 C 200 A P O T Derate linearly above 25 C 1.14 mW/C O mW Power Dissipation, T = 25 C 300 C P O T Derate linearly above 25 C 1.71 mW/C C Operating Junction Temperature T -65 to +200 J C Storage Temperature T -65 to +200 STG Semicoa Semiconductors, Inc. Copyright 2002 Rev. F 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2 www.SEMICOA.com 2N2857 Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at T = 25C A Off Characteristics Parameter Symbol Test Conditions Min Typ Max Units Volts Collector-Emitter Breakdown Voltage V I = 3 mA 15 (BR)CEO C nA Collector-Base Cutoff Current I V = 15 Volts 10 CBO1 CB A Collector-Base Cutoff Current I V = 30 Volts 1 CBO3 CB A Collector-Base Cutoff Current I 1 V = 15 Volts, T = 150C CBO2 CB A nA Collector-Emitter Cutoff Current I V = 16 Volts 100 CES CE A Emitter-Base Cutoff Current I V = 3 Volts 10 EBO1 EB Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% On Characteristics Parameter Symbol Test Conditions Min Typ Max Units = 3 mA, V = 1 Volts h I 30 150 FE1 C CE DC Current Gain h I = 3 mA, V = 1 Volts 10 FE2 C CE T = -55C A Volts Base-Emitter Saturation Voltage V I = 10 mA, I = 1 mA 1.0 BEsat C B Volts Collector-Emitter Saturation Voltage V I = 10 mA, I = 1 mA 0.4 CEsat C B Dynamic Characteristics Parameter Symbol Test Conditions Min Typ Max Units Magnitude Common Emitter, Short V = 6 Volts, I = 5 mA, CE C h 10 21 FE Circuit Forward Current Transfer Ratio f = 100 MHz Small Signal Short Circuit Forward V = 6 Volts, I = 2 mA, CE C h 50 220 FE Current Transfer Ratio f = 1 kHz Collector to Base Feedback V = 10 Volts, I = 0 mA, CB E pF C 1 CB Capacitance 100 kHZ < f < 1 MHz V = 6 Volts, I = 2 mA, CB E ps Collector Base time constant r C 4 15 b C f = 31.9 MHz V = 6 Volts, I = 1.5 mA, CE E MHz Small Signal Power Gain G 12.5 21 pe f = 450 MHz V = 6 Volts, I = 1.5 mA, CE C Noise Figure F 4.5 dB f < 450 MHz, R = 50 g Semicoa Semiconductors, Inc. Copyright 2002 Rev. F 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2 www.SEMICOA.com