X-On Electronics has gained recognition as a prominent supplier of JANTX2N6193 across the USA, India, Europe, Australia, and various other global locations. JANTX2N6193 are a product manufactured by Semicoa. We provide cost-effective solutions for JANTX2N6193, ensuring timely deliveries around the world.

JANTX2N6193 Semicoa

JANTX2N6193 electronic component of Semicoa
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See Product Specifications
Part No.JANTX2N6193
Manufacturer: Semicoa
Category: Unclassified
Description: Trans GP BJT PNP 100V 5A 3-Pin TO-39
Datasheet: JANTX2N6193 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
100: USD 22.1602 ea
Line Total: USD 2216.02 
Availability - 0
MOQ: 100  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 27 Nov to Tue. 03 Dec
MOQ : 100
Multiples : 1
100 : USD 22.1602
100 : USD 21.9353
500 : USD 20.8465
1000 : USD 19.5778
2500 : USD 16.8286

0
Ship by Wed. 27 Nov to Tue. 03 Dec
MOQ : 1
Multiples : 1
1 : USD 26.5198
10 : USD 14.9423
25 : USD 14.6435

   
Manufacturer
Product Category
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We are delighted to provide the JANTX2N6193 from our Semicoa manufacturer, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the JANTX2N6193 and other electronic components in the Semicoa manufacturer and beyond.

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TECHNICAL DATA PNP MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/561 Devices Qualified Level JAN, JANTX 2N6193 JANTXV MAXIMUM RATINGS Ratings Symbol 2N6193 Units - Emitter Voltage 100 V CEO - 100 V C Emitter - 6.0 V EBO 5.0 I C Base Current 1.0 I B 0 Total Power Dissipation T = +25 C 1.0 W A P 0 T T = +25 C 10 W C 0 Operating & Storage Temperature Range - 65 to +200 C T T o p , TO - 39* THERMAL CHARACTERISTICS (TO - Characteristics Symbol Max. Unit 0 Thermal Resistance, Junction - - Case 17.5 R 0 0 1) Derate linearly 5.71mW/ > +25 A 0 0 2) Derate linearly 57.1mW/ > +25 C 0 ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS - Emitter Sustaining Voltage V 100 I C - Emitter Cuto ff Current I 100 CEO V = 100 Vdc CE Emitter - I 100 EBO V = 6.0 Vdc EB - Emitter Cutoff Current 10 I CEX V = 90 Vdc, V = 1.5 Vdc CE BE - I 10 c V = 100 Vdc 6 Lake Street, Lawrence, MA 01841 120101 1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (978) 689 - 0803 1 of 2 Page CB CBO Ad Base Cutoff Current Collector Adc Collector Adc Base Cutoff Current Adc Collector = 50 mAdc CEO(sus) Vdc Collector package outline *See appendix A for C C for T C C for T JC C/W to 205AD) stg (2) (1) Adc Adc Collector Current Vdc Base Voltage BO Vdc Base Voltage Collector Vdc Collector 2N6193 JAN SERIES ELECTRICAL CHARACTERISTICS (cont) Characteristics Symbol Min. Max. Unit (3) ON CHARACTERISTICS DC Current Gain 60 I = 2.0 Vdc C CE h FE 60 240 I = 2.0 Vdc C CE 40 I = 2.0 Vdc C CE - Emitter Saturation Voltage 0.7 I V C B CE(sat) 1.2 I B Base - Emitter Saturation Voltage 1.2 I V C B BE(sat) 1.8 I B DYNAMIC CHARACTERISTICS - Signal Short Circuit - Current Transfe r Ratio 3.0 15 h I = 10 Vdc, f = 10 MHz C CE Output Capacitance C 300 obo V = 0, 100 kHz 1.0 MHz E Output Capacitance 1250 C ibo V = 0, 100 kHz 1.0 MHz BE C SWITCHING CHARACTERISTICS t 100 s V = - = 3.0 d CC t Rise Time 100 I = r s C B1 t 2.0 s V = - s CC C t Fall Time 200 I = - I = f s B1 B2 SAFE OPERATING AREA DC Tests 0 T = +25 C, 1 Cycle, t 0.5 s C Test 1 V CE C Test 2 V CE C (3) Pulse Test: Pulse Width = 300 2.0%. 6 Lake Street, Lawrence, MA 01841 12010 1 1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (978) 689 - 0803 Page 2 of 2 s, Duty Cycle = 55 mAdc = 90 Vdc, I = 5.0 Adc = 2.0 Vdc, I 0.2 Adc = 2.0 Adc, 40 Vdc I Storage Time 0.2 Adc = 2.0 Adc, I BE(off) Vdc 40 Vdc, V lay Time De f = 2.0 Vdc, I pF CB f = 10 Vdc, I pF = 0.5 Adc, V fe Forward Magnitude of Common Emitter Small C = 0.5 Adc = 5.0 Adc, I Vdc = 0.2 Adc = 2.0 Adc, I C = 0.5 Adc = 5.0 Adc, I Vdc = 0.2 Adc = 2.0 Adc, I Collector = 5.0 Adc, V = 2.0 Adc, V = 0.5 Adc, V

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