X-On Electronics has gained recognition as a prominent supplier of JANTX2N6052 Darlington Transistors across the USA, India, Europe, Australia, and various other global locations. JANTX2N6052 Darlington Transistors are a product manufactured by Microchip. We provide cost-effective solutions for Darlington Transistors, ensuring timely deliveries around the world.

JANTX2N6052 Microchip

JANTX2N6052 electronic component of Microchip
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See Product Specifications
Part No.JANTX2N6052
Manufacturer: Microchip
Category: Darlington Transistors
Description: Trans Darlington PNP 100V 12A 3-Pin(2+Tab) TO-3
Datasheet: JANTX2N6052 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 77.4869 ea
Line Total: USD 774.87

Availability - 0
MOQ: 10  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ : 10
Multiples : 1
10 : USD 77.4869
100 : USD 74.3665
1000 : USD 72.8792

0
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ : 100
Multiples : 1
100 : USD 92.9143

0
Ship by Thu. 08 Aug to Mon. 12 Aug
MOQ : 1
Multiples : 1
1 : USD 79.2169

   
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We are delighted to provide the JANTX2N6052 from our Darlington Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the JANTX2N6052 and other electronic components in the Darlington Transistors category and beyond.

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TECHNICAL DATA PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/501 Devices Qualified Level JAN 2N6051 2N6052 JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N6051 2N6052 Unit - Emitter Voltage 80 100 V CEO - 80 100 V Emitter - 5.0 V EBO Base Current I 0.2 B 12 I C 0 150 W Total Power Dissipation T = +25 C C P T 0 75 W T = +100 C C 0 - 55 to +175 C T T op , THERMAL CHARACTERISTICS TO - 3* Characteristics Symbol Max. Unit (TO - 0 Thermal Resistance, Junction - - Case 1.0 R 0 0 1) Derate linearly at 1.0 W/ > +25 C C 0 ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS - 80 I V C CEO 100 - Emitter Cutoff Current V = 40 Vdc I 1.0 CE CEO 1.0 V = 50 Vdc CE - Emitter Cutoff Current 0.5 V = 80 Vdc, V = 1.5 Vdc I CE BE CEX 0.5 V = 100 Vdc, V = 1.5 Vdc CE BE Emitter - 2.0 V = 5.0 Vdc I EB EBO 01841 120101 1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (978) 689 - 0803 1 of 2 Page 6 Lake Street, Lawrence, MA mAdc Base Cutoff Current 2N6052 2N6051 mAdc Collector 2N6052 mAdc 2N6051 Collector 2N6052 (BR) 2N6051 = 100 mAdc Vdc Emitter Breakdown Voltage Collector package outline *See appendix A for C above T JC C/W to 204AA) stg Operating & Storage Junction Temperature Range (1) Adc Collector Current Adc Vdc Base Voltage CBO Vdc Base Voltage lector Col Vdc Collector 2N6051, 2N6052 JAN SERIES ELECTRICAL CHARACTERISTICS (cont) Characteristics Symbol Min. Max. Unit (2) ON CHARACTERISTICS - Current Transfer Ratio 1,000 I = 3.0 Vdc C CE 1,000 18,000 h I = 3.0 Vdc FE C CE 150 I = 3.0 Vdc C CE - Emitter Saturation Voltage 3.0 I V C B CE(sat) 2.0 I C B Base - Emitter Saturation Voltage 4.0 I V C B BE(sat) Base - Emitter Voltage 2.8 I = 6.0 Adc, V = 3.0 Vdc V C CE BE DYNAMIC CHARACTERISTICS - Signal Short - Circuit Forward Current Transfer Ratio 10 250 I = 3.0 Vdc, f = 1.0 MHz h C CE Small - Signal Short - Circuit Forward Current Transfer Ratio I = 3.0 Vdc, f = 1.0 kHz h 1,000 C CE Output Capacitance 300 V = 10 Vd = 0, 100 kHz 1.0 MHz C E obo SWITCHING CHARACTERISTICS Turn - t 2.0 s V C Turn - t 10 V = I s C B1 B2 SAFE OPERATING AREA DC Tests 0 0 0 T = +25 C + 10 - 0 , 1 Cycle, t 1.0 s C Test 1 V CE C Test 2 V CE C Test 3 V CE C V CE C (2) Pulse Test: Pulse Widt h = 300 2.0%. 6 Lake Street, Lawrence, MA 01841 120101 1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (978) 689 - 0803 Page 2 of 2 s, Duty Cycle 2N6052 = 155 mAdc = 90 Vdc, I 2N6051 = 200 mAdc = 70 Vdc, I All Types = 5.0 Adc = 30 Vdc, I All Types = 12 Adc = 12.5 Vdc, I C CC off = 20 mAdc = 5.0 Adc I = 30 Vdc I Off Time on B CC = 20 mAdc = 5.0 Adc I = 30 Vdc I On Time CB f c, I pF fe = 5.0 Adc, V fe = 5.0 Adc, V Magnitude of Common Emitter Small Vdc = 120 mAdc = 12 Adc, I Vdc = 24 mAdc = 6.0 Adc, I = 120 mAdc = 12 Adc, I Vdc Collector = 12 Adc, V = 6.0 Adc, V = 1.0 Adc, V Forward

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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