2N6107 2N6109 2N6111 PNP 2N6288 2N6290 2N6292 NPN www.centralsemi.com COMPLEMENTARY DESCRIPTION: SILICON POWER TRANSISTORS The CENTRAL SEMICONDUCTOR 2N6107, 2N6288 series types are complementary silicon power transistors, manufactured by the epitaxial base process, designed for general purpose power amplifier and switching applications. MARKING: FULL PART NUMBER TO-220 CASE 2N6111 2N6109 2N6107 MAXIMUM RATINGS: (T =25C) SYMBOL 2N6288 2N6290 2N6292 UNITS C Collector-Base Voltage V 40 60 80 V CBO Collector-Emitter Voltage V 30 50 70 V CEO Emitter-Base Voltage V 5.0 V EBO Continuous Collector Current I 7.0 A C Peak Collector Current I 10 A CM Continuous Base Current I 3.0 A B Power Dissipation P 40 W D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 3.13 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) C SYMBOL TEST CONDITIONS MIN MAX UNITS I V =Rated V , V=1.5V 100 A CEV CE CEO EB I V =Rated V , V =1.5V, T=150C 2.0 mA CEV CE CEO EB C I V =20V (2N6111, 2N6288) 1.0 mA CEO CE I V =40V (2N6109, 2N6290) 1.0 mA CEO CE I V =60V (2N6107, 2N6292) 1.0 mA CEO CE I V=5.0V 1.0 mA EBO EB BV I =100mA (2N6111, 2N6288) 30 V CEO C BV I =100mA (2N6109, 2N6290) 50 V CEO C BV I =100mA (2N6107, 2N6292) 70 V CEO C V I =7.0A, I=3.0A 3.5 V CE(SAT) C B V V =4.0V, I=7.0A 3.0 V BE(ON) CE C h V =4.0V, I =2.0A (2N6107, 2N6292) 30 150 FE CE C h V =4.0V, I =2.5A (2N6109, 2N6290) 30 150 FE CE C h V =4.0V, I =3.0A (2N6111, 2N6288) 30 150 FE CE C h V =4.0V, I=7.0A 2.3 FE CE C h V =4.0V, I =0.5A, f=50kHz 20 fe CE C f V =4.0V, I =0.5A, f=1.0MHz 4.0 MHz T CE C C V =10V, I =0, f=1.0MHz 250 pF ob CB E R1 (10-April 2013)2N6107 2N6109 2N6111 PNP 2N6288 2N6290 2N6292 NPN COMPLEMENTARY SILICON POWER TRANSISTORS TO-220 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Collector 3) Emitter Tab) Collector MARKING: FULL PART NUMBER R1 (10-April 2013) www.centralsemi.com